• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.130-134
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• 2007

In this study, in order to. develop the low temperature sintering ceramics for multilayer piezoelectric actuator, PMN-PNN-PZT ceramics using CuO, $Bi_{2}O_{3}\;and\;Li_{2}CO_{3}$ as sintering aids were manufactured with the amount of $WO_{3}$ addition. The ceramics were sintered at $900,\;930,\;960^{\circ}C$, respectively. Thereafter, their microstructural, dielectric and piezoelectric properties were investigated. The $WO_{3}$ was proved to lower the sintering temperature of piezoelectric ceramics due to the effects of PbO and $WO_{3}$ liquid phase. At 0.3 wt% $WO_{3}$ added specimen sintered at $930^{\circ}C$, electromechanical coupling factor($k_{p}$), mechanical quality factor($Q_{m}$), dielectric constant and $d_{33}$ showed the optimum values as the values of 0.60, 1,402, 1,440 and 360 pC/N, respectively, for multilayer piezoelectric actuator application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.214-216
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• 2006

In this study, in order to develop the composition ceramics for low loss and low temperature sintering multilayer piezoelectric actuator, PMN-PZN-PZT ceramics were fabricated using two stage calcination method and $Li_2CO_3$, $Bi_2O_3$ and CuO as sintering aids and their piezoelectric characteristics were investigated according to the 2nd calcination and sintering temperature. At the calcination temperature of $750^{\circ}C$ and sintering temperature of $930^{\circ}C$, density, electromechanical coupling factor ($k_p$), mechanical quality factor ($Q_m$), Dielectric constant (${\varepsilon}_r$) and piezoelectric constant ($d_{33}$) of specimen showed the optimum value of $7.94g/cm^2$ 0.581, 1554, 1555 and 356pC/N, respectively for multilayer piezoelectric actuator application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1039-1043
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• 2007

In this paper, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator application, PMN-PZN-PZT ceramics were fabricated using $LiCO_3,\;Bi_2O_3$ and CuO as sintering aids. And also, their piezoelectric and dielectric properties were investigated according to the milling time. All the specimens sintered at $930\;^{\circ}C$ showed tetragonal phases without secondary phases. With increasing milling time, piezoelectric and dielectric characteristic of specimens increased up to 60 hours milling time and then decreased due to the agglomeration of fine particle. Accordingly, it seems that 60 hour is optimum milling condition. At the sintering temperature of $930\;^{\circ}C$ and milling time of 60 hour, density, dielectric constant(${\varepsilon}_r$), electromechanical coupling factor (kp), mechanical quality factor (Qm), piezoelectric d constant showed the optimum value of $7.95\;g/m^3$, 1382, 0.546, 1749, 330 pC/N, respectively for multilayer piezoelectric actuator application.

• Transactions on Electrical and Electronic Materials
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• v.5 no.2
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• pp.76-80
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• 2004

Piezoelectric and dielectric properties as functions of x and y mole ratio in yPb(ZrxTil-x)O$_3$(1-y)Pb(Mn$\_$1/3/Nb/2/3/)O$_3$, ceramics, PZT-PMN, are investigated for large displacement piezoelectric devices. From the experimental results, when y is 0.95 and x is 0.505, the piezoelectric and dielectric properties are maximum, that is, electromechanical coupling coefficient(kp), piezoelectric strain constant(d$\_$33/), permittivity($\varepsilon$$\_$33/$\^$T//$\varepsilon$$\_$0/), and Curie temperature are 58 %, 272 pC/N, 1520 and about 350$^{\circ}C$, respectively. Also, when y is 0.90 and x is 0.50, their properties are 56 %, 242 pC/N, 1220, and 290$^{\circ}C$, respectively. As MgO dopant is added from 0 wt% to 1 wt%, kp increases to 63 % and Qm decreases to 500 at the MgO dopant of 0.1 wt%, and then kp decreases to 57 % as MgO is added.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.274-275
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• 2007

In this study, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator application. At the PMN-PZN-PZT ceramics, the influence of the ball-mill time on piezoelectric characteristics was investigated. All the specimens improved according to the increase of the ball-mill time increase. The specimen showed the optimum value when ball-mill time is 60 hour. Their optimum values were density=$7.93g/m^3$, ${\varepsilon}_r=1371$, kp=0.551, Qm=1609, $d_{33}=321pC/N$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.288-289
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• 2007

In this study, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator application, PMN-PZN-PZT ceramics were manufactured as a function of the amount of CuO addition and their dielectric and piezoelectric characteristics were investigated. With the amount of CuO addition, the physical characteristics of specimens decreased. The specimens showed the optimum value at 0.5wt%CuO addition. Their optimum values were density=$7.93g/m^3$, ${\varepsilon}_r$=1398, kp=0.560, Qm=1706, $d_{33}$=327pC/N, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.391-395
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• 2000

In this study, the temperature coefficient of resonant frequency(TC $F_{r}$), dielectric and piezoelectric properties of Pb[(S $b_{1}$2/N $b_{1}$2/)$_{0.0035}$-(M $n_{1}$3/N $b_{2}$3/)$_{0.0065}$-(Z $r_{x}$ $Ti_{1-x}$ )$_{0.90}$] $O_3$ceramics is investigated with Zr/Ti ratio. The dielectric constant and electromechanical coupling factor( $k_{p}$) showed the highest values of 1257, 0.562 respectively when the Zr/Ti ratio is 49.5/50.5. The mechanical quality factor( $Q_{m}$) is the lowest value of 713 when the Zr/Ti ratio is 49.5/50.5, and increased with the decrease of the Zr/Ti ratio. The temperature coefficient of resonant frequency(TC $F_{r}$) change abruptly at the morphotropic phase boundary(MPB), which is between the rhombohedral phase with highly negative TC $F_{r}$ of -106ppm/$^{\circ}C$ and the tetragonal phase with highly positive TC $F_{r}$ of +64pp $m^{\circ}C$ as Zr/Ti ratio changes from 50/50 to 49.5/50.5.50.5..5.50.5.5.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.317-321
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• 2002

Piezoelectric properties of $(Pb_{1-x}Y_x)[(Ni_{1/3}Nb_{2/3})_{0.15}(Zr_{1/2}Ti_{1/2)})_{0.85}]O_{3}$ (x=0~0.05) ceramics were investigated, The stoichiometric PNN-PZT ceramics required the sintering temperature above $1100^{\circ}C$, but the addition of $Y_{2}O_{3}$ in the PNN-PZT ceramic lowered the sintering temperature down to $1000^{\circ}C$. In case of x=0.005, the electro-mechanical coupling $factor(K_p)$, the piezoelectric $constant(d_{33})$, and the maximum strain ratio of PNN-PZT ceramics sintered at $1000^{\circ}C$ were 53.1%, 395pC/N, and $2200{\times}10^{-6}$ respectively, A 30-layer piezoelectric actuator$(10{\times}10{\times}1.7mm)$ fabricated with the above material showed the maximum strain of $2.09{\mu}m$ under 100V DC bias.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.72-74
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• 1989

A composite with 1-3 connectivity was fabricated by filling spurrs epoxy in arried PZT bars. The composite bad lower density(2220 Kg/$m^3$), lower dielectric constant, lower piezoelectric coefficient d33(260*$10^{12}$ C/N), and higher voltage coefficient(110.1*$10^{-3}$ Vm/N) than that of solid PZT. The probe was fabricated by using composite transducer that was made above. The underwater testing of the composite transducer was performed with water backing.