• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.123-124
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• 2006

The sandwiched PZT/$BaTiO_3$/PZT thick films were fabricated by two different methods thick films of the PZT by screen printing method on alumina substrateselectrodes with Pt, thin films of $BaTiO_3$ by the spin-coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the $BaTiO_3$ layer. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared $BaTiO_3$ coating solution at interface of the PZT thick films, The insertion of BaTi03 interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of $BaTiO_3$ layers. The leakage current density of the $PZT/BaTiO_3-1$ film is less that $4.41{\times}10^{-9}A/cm^2$ at 5 V.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.177-184
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• 1996

We adopted the $Pt/SiO_{2}/Si$ and the $Ir/SiO_{2}/Si$ substrates of which buffer layer is $PbTiO_{3}$ to improve electrode and interfacial properties of PZT thin film deposited by reactive sputtering method using metal target in this study. We got PZT thin film to have highly oriented(100) structure and good crystallinity using buffer layer in Pt bottom-electrode, though randomly oriented PZT thin film was obtained without buffer layer. Although great improvement of PZT phase formation on Ir bottom-electrode with buffer layer was not observed, we observed the increase of remennant polarization and the decrease of coercive field compared with properties of PZT thin films on the Pt bottom-electrode. So we got the results of the increase of dielectric constant using buffer layer on fabrication of PZT thin film and the better dielectric properties in PZT thin film using Ir bottom-electrode compared with that using Pt bottom-electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.142-145
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• 1996

In this study, dielectric and piezoelectric properties of 0.5PNN-(0.5-x)PZN-xPZT system ceramics with PZT mole ratio were investigated. As the amount of PZT increases, curie temperature was increased. The maximum of dielectric and piezoelectric constant was shoun at 0.3 mole of PZT amount. As a results, we have found that the structure of ceramics with PZT 0.3 mole was morphotropic phase boundary.

• Composites Research
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• v.35 no.3
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• pp.134-138
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• 2022

In this study, Ti powder/Polymer concrete composites were processed by adding the PZT powder, one of the piezoelectric materials, to improve the vibration damping effect of Polymer concrete. Ti powder was added at a constant ratio in order to maximize the vibration damping effect using the piezoelectric effect. Three types of composite material specimens were prepared: a specimen without PZT powder, specimens with 2.5 wt% and 5 wt% of PZT powder. The vibration characteristics and compression properties were analyzed for all specimens. As a result, it was confirmed that as the addition ratio of PZT powder increased, the Inertance value at the resonant frequency decreased due to the piezoelectric effect when the vibration generated from Ti powder/polymer concrete was transmitted. Especially, the Inertance value was decreased by about 19.3% compared to the specimen without PZT at the resonant frequency. The change in acceleration with time also significantly decreased as PZT powder was added, confirming the effect of PZT addition. In addition, through the compression strength test, it was found that the degree of deterioration in compression properties due to the addition of PZT up to 5 wt% was insignificant, and it was confirmed that the powder was evenly dispersed in the composites through the cross-sectional analysis of the specimen.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1199-1201
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• 1995

PZT powders were prepared by the molten salt synthesis method. The porous PZT was preapred from the mixture of PZT and PVA powders by BURPS(BURnout plastic Sphere) technique. The acoustic properties with various plastic sphere wt.% were studied. The acoustic impedance of porous PZT was smaller than that of single phase PZT ceramics. And the pulse-reponse of porous PZT maded transducer was significantly advanced to that of solid PZT maded transducer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.997-1000
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• 2001

Pb(Zr$\sub$0.52/Ti$\sub$0.48/)O$_3$(PZT) thin films have been prepared by rf-magnetron sputtering methods and investigated the structural and electrical properties. In order to investigate the effects of sputtering conditions, input power was controlled during deposition. Crystallization process and microstructure of PZT thin films were largely affected by input power. Highly crystallized PZT films with the perovskite structure were successfully obtained on Pt/Ti bottom electrode. The dielectric constants and polarization of PZT thin films were increased with increasing input power, and the coercive electric field was decreased with increasing input power . The dielectric constant of PZT thin films with input power 150 W was 966 at 1 kHz. we, authors, proposed that preferred orientation of PZT thin films were controlled by input power in sputtering methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.709-712
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• 2001

The effects of post annealing temperature by the Rapid Thermal Annealing(RTA) on the electrical properties of Pb(Zr,Ti)O$_3$(PZT) thin film were investigated. Analyses by the RTA treatments reveled that the leakage current of PZT thin films strongly depend on heating temperature and time. It was found that leakage current properties of PZT capacitor were changed by heating temperature during the RTA annealing. On Pt/Ti/Si substrates, PZT films are deposited at 350 $^{\circ}C$ by rf magnetron sputtering. The X-ray diffusion (XRD) was confirmed the formation of PZT thin film. Leakage current characteristics were improved with decreasing the post annealing temperature of PZT thin film. RTA annealed film on the 700$^{\circ}C$ shows ferroelectric and electrical properties with a remanent polarization of 12.4${\mu}$C/$\textrm{cm}^2$ coercive field of 117kV/cm, leakage current J= 6.2${\times}$10$\^$-6/ A/$\textrm{cm}^2$

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.2
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• pp.77-81
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.153-156
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• 2004

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] heterolayered thin films were deposited by RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrate. The effects of the structural and dielectric properties of PZT heterolayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(6040)/(4060) heterolayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) thin films. Investigating the dielectric constant and dielectric loss characteristics. the application for the next-generation dielectric thin films and memory devices were studied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.183-186
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• 1994

Porous piezoelectric ceramics of P7T have been newly developed to apply for transducers in an echo sounder PZT powders were prepared by the molten salt synthesis method. The porous PZT was prepared from a mixture of PZT and polyvinylalcohol(PVA) powders by BURPS(Burnout Plastic Sphere) technique. The piezoelectric and acoustic properties with various PVA wt.% have studied. The density of porous PZT ceramics was decreased linearly with increasing the PVA sphere wt.%. Piezoelectric coefficient d$\_$33/ of porous PZT ceramics was almost same to that of single phase PZT ceramics. The thickness mode coupling factor k$\_$t/ was ranged over 0.53∼0.59 comparable with the single phase PZT ceramics(k$\_$t/=0.7).