• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.577-578
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at 650f showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were 16.48${\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.579-580
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• 2006

Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) Precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately 60fm. And the densification of the PZT thick films increased with increasing the number of sol coatings.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1243-1244
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1245-1246
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• 2006

Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10 min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately $60{\mu}m$. And the densification of the PZT thick films increased with increasing the number of sol coatings.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1703-1704
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1705-1706
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• 2006

Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10 min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately $60{\mu}m$. And the densification of the PZT thick films increased with increasing the number of sol coatings.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.311-314
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• 1999

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO$_2$/Si substrate using PZT(10/90) and PZT(90/10) metal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structure without presence of the rosette structure. It can be assumed that the lower PZT layers a role of nucleation site or seeding layer for the formation of the upper PZT layer. Zr and Ti diffusion into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6, respectively.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1181-1187
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• 1999

PZT(53/47) precursor 1M sols were prepared using a diol based Sol-Gel process, and thin films were deposited by spin coating onto Pt/Ti/$SiO_2$/Si substrates. With a single coating, final film thickness of aproximately 0.9${\mu}m $ was achieved from diol-based PZT sol. Since PZT crystallized in a ferroelectric perovskite phase from an intermediate nonferroelectric pyrochlore phase, the effects of the presence of perovskite PZT seeds on the phase transformation of PZT were investigated. Seeded PZT films were prepared from the seeded PZT 1M sols in which seeds with less than 0.2${\mu}m $ in size and 1wt% were dispersed in n-propanol before mixing with the PZT stock solution. The seeding effects were confirmed by the fact that the formation temperature of perovskite phase decreased by 50$^{\circ}C$ with less than 1wt% seeds.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.1
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• pp.101-110
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• 1998

큰 누설전류를 개선하고 누설전류 기구를 해석하기 위해 Pt/Ti/ SiO2/Si 기판상에서 2단계 sputtering 하여 PZT박막을 형성시켰다. 상온층과 perovskite의 두층으로 이루어진 PZT박막은 누설전류가 개선되었다. 특히 20nm의 상온층을 포함하는 PZT 박막은 유전상수 와 누설전류 특성이 모두 탁월한 것으로 나타났다. 이와 같은 조건에서 PZT 박막의 누설전 류 기구는 bulk 지배하는 기구로 바뀌었다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.13-17
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• 2005

The Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃/(Ba/sub 0.6/Sr/sub 0.4/)TiO₃[PZT/BST] heterolayered thin films were deposited on Pt/Ti/SiO₂/Si substrates by using the RF sputtering method with different RF power. The PZT/BST heterolayered thin films had the tetragonal structure of the PZT phase and BST phase. Increasing the RF power. the intensity of the PZT (100), (110) peaks and BST (111) peaks were decreased and the intensity of the BST (100), (110) peaks were increased. The thickness ratio of the top layered BST thin film and the bottom layered PZT thin film was 2 to1. The atomic concentration of the Ba, Sr, Pb. Zr, Ti atoms were constant in the PZT thin films and BST thin films, respectively. The Pt atom was diffused to the PZT region in the PZT/BST heterolayered thin films deposited at condition of 60[W] RF power. Increasing the frequency, dielectric constant and loss of the PZT/BST heterolayered thin films were decreased. The dielectric constant and loss of the PZT/BST heterolayered thin films deposited with RF power of 90[W] were 406 and 3%, respectively.