• Title/Summary/Keyword: PZT

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Improvement of the Resistivity in High Field for the New Piezoelectric Compositions in the Bi(NiaX1-a)O3-PbTiO3(X=Ti,Nb) System (Bi(NiaX1-a)O3-PbTiO3 계 압전 신조성(X-Ti,Nb)의 내전압 특성 향상)

  • Choi, Soon-Mok;Seo, Won-Seon
    • Journal of the Korean Ceramic Society
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    • v.45 no.4
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    • pp.220-225
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    • 2008
  • Lead-free ferroelectric ceramics are widely researched today for industrial applications as sensors, actuators and transducers. Since $Pb(Zr_aTi_{1-a})O_3$-(PZT) has high Curie temperature($T_C$), high piezoelectric properties near its morphotropic phase boundary(MPB) composition and small temperature dependence electrical behavior, it has been used to commercial materials for wide temperature range and different application fields. According to the tolerance factor concept, since the $Bi^{3+}$ cation with 12-fold coordinate has a smaller ionic radius than 12-fold coordinate $Pb^{2+}$, most bismuth based perovskites possess a smaller tolerance factor. Therefore, MPBs with a higher $T_C$ may be expected in $Bi(Me^{3+})O_3PbTiO_3$ solid solutions. As in lead based perovskite systems, it is clear that we need to explore more materials in simple or complex bismuth based MPB systems. The objective of this study is to investigate the $Bi(Ni_{1_a}X_a)O_3-PbTiO_3(X=Ti^{4+},\;Nb^{5+})$ perovskite solid-solution. For improving the electronic conduction problem, the magnesium and manganese modified system was also studied.

"Lead-free" Piezoelectric Ba(Ti0.94Zr0.06)O3 Single Crystals with Electromechanical Coupling Factor (k33) Higher Than 0.8 (0.8 이상의 전기기계결합계수(k33)를 가지는 고효율 무연 압전 Ba(Ti0.94Zr0.06)O3 단결정)

  • Lee, Jong-Yeb;Oh, Hyun-Taek;Lee, Ho-Yong
    • Journal of the Korean Ceramic Society
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    • v.51 no.6
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    • pp.623-628
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    • 2014
  • Orthorhombic $Ba(Ti_{0.94}Zr_{0.06})O_3$ single crystals are fabricated using the cost-effective solid-state single crystal growth (SSCG) method; their dielectric and piezoelectric properties are also characterized. Measurements show that (001) $Ba(Ti_{0.94}Zr_{0.06})O_3$ single crystals have an electromechanical coupling factor ($k_{33}$) higher than 0.83, piezoelectric charge constant ($d_{33}$) of about 400 [pC/N], and piezoelectric voltage constant ($g_{33}$) higher than 50 [${\times}10^{-3}Vm/N$]. The transition temperature ($T_{OT}$) of the (001) $Ba(Ti_{0.94}Zr_{0.06})O_3$ single crystals between orthorhombic and tetragonal phases is also observed to be about $61^{\circ}C$. Because their electromechanical coupling factor ($k_{33}$) and piezoelectric voltage constant ($g_{33}$) are higher than those of soft PZT ceramics, it is expected that (001) $Ba(Ti_{0.94}Zr_{0.06})O_3$ single crystals can be used as "lead-free" piezoelectric materials in many piezoelectric applications.

Piezo-electrically Actuated Micro Corner Cube Retroreflector (CCR) for Free-space Optical Communication Applications

  • Lee, Duk-Hyun;Park, Jae-Y.
    • Journal of Electrical Engineering and Technology
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    • v.5 no.2
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    • pp.337-341
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    • 2010
  • In this paper, an extremely low voltage operated micro corner cube retroreflector (CCR) was fabricated for free-space optical communication applications by using bulk silicon micromachining technologies. The CCR was comprised of an orthogonal vertical mirror and a horizontal actuated mirror. For low voltage operation, the horizontal actuated mirror was designed with two PZT cantilever actuators, torsional bars, hinges, and a mirror plate with a size of $400{\mu}m{\times}400{\mu}m$. In particular, the torsional bars and hinges were carefully simulated and designed to secure the flatness of the mirror plate by using a finite element method (FEM) simulator. The measured tilting angle was approximately $2^{\circ}$ at the applied voltage of 5 V. An orthogonal vertical mirror with an extremely smooth surface texture was fabricated using KOH wet etching and a double-SOI (silicon-on-insulator) wafer with a (110) silicon wafer. The fabricated orthogonal vertical mirror was comprised of four pairs of two mutually orthogonal flat mirrors with $400{\mu}m4 (length) $\times400{\mu}m$ (height) $\times30{\mu}m$ (thickness). The cross angles and surface roughness of the orthogonal vertical mirror were orthogonal, almost $90^{\circ}$ and 3.523 nm rms, respectively. The proposed CCR was completed by combining the orthogonal vertical and horizontal actuated mirrors. Data transmission and modulation at a frequency of 10 Hz was successfully demonstrated using the fabricated CCR at a distance of approximately 50 cm.

Dielectric and Piezoelectric Properties of PMW-PNN-PZT System Ceramics (PMW-PNN-PZT계 세라믹스의 유전및 압전특성)

  • 윤광희;류주현;윤현상;박창엽
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.3
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    • pp.214-219
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    • 2000
  • In this paper the structural dielectric and piezoelectric properties of Pb[(M $g_{1}$2// $W_{1}$2/)$_{x}$-(N $i_{1}$3//N $b_{2}$3/)$_{0.15-x-(Zr_{0.5})}$ $Ti_{0.5}$)$_{0.85}$$O_3$ (x=0.0~0.10) ceramic were investigated with the substitution of Pb(M $g_{1}$2// $W_{1}$2/) $O_3$. According to the substitution of Pb(M $g_{1}$2//W/1/2/) $O_3$ curie temperatures were slightly decrease due to the decrease of the tetrag-onality of crystal structure and coercive fields were decreased. Up to the substitution of Pb(M $g_{1}$2// $W_{1}$2/) $O_3$ 3mol%,remnant polarization dielectric constant piezoelectric constant were increased. Dielectric constant and electro-mechanical coupling factor( $k_{p}$, $k_{31}$ ) were appeared the highest value of 2230, 0.64, and 0.38 and piezoelectric constant( $d_{33}$ , $d_{31}$ ) was the largest value of 418, 202($\times$10$^{-12}$ /C/N), respectively, when the substitution amount of Pb(M $g_{1}$2// $W_{1}$2/N) respectively, when the substitution amount of Pb(M $g_{1}$2// $W_{1}$2/) $O_3$ was 3mol%.s 3mol%.%.

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Performance Evaluation of Switching Amplifier in Micro-positioning Systems with Piezoelectric Actuator (마이크로 변위제어 시스템의 압전 액츄에이터 구동을 위한 스위칭 증폭기 성능 분석)

  • Park, Joung-Hu;Baek, Jong-Bok;Cho, Bo-Hyung;Choi, Sung-Jin
    • The Transactions of the Korean Institute of Power Electronics
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    • v.14 no.1
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    • pp.62-71
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    • 2009
  • In this paper, an improved drive method of piezoelectric PZT stack actuator for micro-positioning system is proposed and the performances are evaluated. This type of amplifier is based on switching technology efficiently handling the arbitrary regenerative energy from the piezoelectric actuator. The conventional voltage-feedback control method has the THD of -32dB (${\approx}2.5%$) with 100mHz sinusoidal reference, which means that the positioning performance in linearity degrades due to the hysteretic relationship between actuator voltage and the displacement. This paper proposed an improved charge-controlling method, which utilizes differential information of charge reference instead of integrating the actuator's current. The current waveform has THD under -40dBV (=1%) and the displacement waveform nearly -52dB (${\approx}0.25%$), which means that the positioning performance is very excellent. Finally, another method of the displacement feedback control has better performance than the voltage method, however there exists a limitation in performance of the system.

The Effects of Driving Waveform of Piezoelectric Industrial Inkjet Head for Fime Patterns (산업용 압전 잉크젯 헤드의 구동신호에 따른 특성)

  • Kim, Young-Jae;Yoo, Young-Seuck;Sim, Won-Chul;Park, Chang-Sung;Joung, Jae-Woo;Oh, Yong-Soo
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1621-1622
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    • 2006
  • This paper presents the effect of driving waveform for piezoelectric bend mode inkjet printhead with optimized mechanical design. Experimental and theoretical studies on the applied driving waveform versus jetting characteristic s were performed. The inkjet head has been designed to maximize the droplet velocity, minimize voltage response of the actuator and optimize the firing frequency to eject ink droplet. The head design was carried out by using mechanical simulation. The printhead has been fabricated with Si(100) and SOI wafers by MEMS process and silicon direct bonding method. To investigate how performance of the piezoelectric ceramic actuator influences on droplet diameter and droplet velocity, the method of stroboscopy was used. Also we observed the movement characteristics of PZT actuator with LDV(Laser Doppler Vibrometer) system, oscilloscope and dynamic signal analyzer. Missing nozzles caused by bubbles in chamber were monitored by their resonance frequency. Using the water based ink of viscosity of 4.8 cps and surface tension of 0.025N/m, it is possible to eject stable droplets up to 20kHz, 4.4m/s and above 8pL at the different applied driving waveforms.

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Energy Harvesting Characteristics of Spring Supported Piezoelectric Cantilever Structure (SPCS) (압전 캔틸레버 스프링 구조물(SPCS)의 에너지 하베스팅 특성)

  • Kim, Kyoung-Bum;Kim, Chang-Il;Jeong, Young-Hun;Lee, Young-Jin;Cho, Jeong-Ho;Paik, Jong-Hoo;Nahm, Sahn;Seong, Tae-Hyeon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.10
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    • pp.766-772
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    • 2012
  • Spring supported piezoelectric cantilever structures (SPCS) were fabricated for vibration-based energy harvester application. We selected four elastic springs (A, B, C, and D type) as cantilever's supporter, each elastic spring has a different spring constant (S). The C type of SPCS ($S_C$: 4,649 N/m) showed a extremely low resonance frequency of 81 Hz along with the highest power output of 38.5 mW while the A type of SPCS ($S_A$: 40,629 N/m) didn't show a resonance frequency while. Therefore, it is considered that the lower spring constant lead to a lower resonance frequency of the SPCS. In addition, a tip mass (18 g) at one end of the SPCS could further reduce the resonance frequency without heavy degradation of power output.

Piezoelectric properties and microstructure of 0.01Pb(Mg1/2W1/2)O3-0.41Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.23PbZrO3thick film with particle size distribution (입자 크기 분포에 따른 0.01Pb(Mg1/2W1/2)O3-0.41Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.23PbZrO3 후막의 미세구조 및 압전특성)

  • Moon, Hi-Gyu;Song, Hyun-Cheol;Kim, Sang-Jong;Choi, Ji-Won;Kang, Chong-Yun;Yoon, Seok-Jin
    • Journal of Sensor Science and Technology
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    • v.17 no.6
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    • pp.418-424
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    • 2008
  • The PZT based piezoelectric thick films prepared by screen printing method have been mainly used as a functional material for MEMS applications due to their compatibility of MEMS process. However the screen printed thick films generally reveal poor electrical and mechanical properties because of their porous microstructure. To improve microstructure we mixed attrition milled powder with ball milled powder of 0.01Pb$(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3$-$0.35PbTiO_3$-$0.23PbZrO_3$+0.1 wt% ${Y_2}{O_3}$+1.5 wt% ZnO composition. By mixing 25 % of attrition milled powder and 75 % of ball milled powder, the broadest particle size distribution was obtained, leading to a dense thick film with crack-free microstructure and improved dielectric properties. The X-ray diffraction analysis revealed that the film was in wellcrystallized perovskite phase. The remanent polarization was increased from $13.7{\mu}C/cm^2$ to $23.3{\mu}C/cm^2$ at the addition of 25 % attrition milled powder.

A study for implementation of ultrasonic transducer in the prostate cancer hyperthermia (전립선암의 온열치료를 위한 초음파변환기 개발에 관한 연구)

  • Park, Mun-Kyu;Noh, Si-Cheol;Park, Jae-Hyun;Choi, Heung-Ho
    • Journal of Sensor Science and Technology
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    • v.18 no.5
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    • pp.377-384
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    • 2009
  • The ultrasonic hyperthermia for oncology has been developed and studied. The HIFU(high intensity focused ultrasound) is the most recent method to treat the tumor by using ultrasound. In this study, an insertion-type transducer for treating a prostate cancer, which can focus the ultrasonic beam mechanically and electrically, was designed and developed. The developed transducer was composed of three arrays, and each array has 32 elements. For the purpose of the mechanical focusing, both side arrays are slanted to the center array by $15^{\circ}$. With this structure, NFL(near field length) was set up as 30 mm. The PZT-4 and two matching layers were used, and the backing layer was excepted to prevent energy losses. The acoustic field analysis and the heating test were performed to evaluate the performance of developed transducer. The shape of an acoustic field, peak pressure, and acoustic pressure distribution were compared with numerical simulation. The NFL was 32 mm, the beam width was 5 mm, focal area was $40\;mm^2$, and peak pressure was 5.5 MPa. With heating by using developed transducer, the temperature increased up to $33^{\circ}C$ at focal zone. As a result of this study, the usefulness of suggested transducer for prostate cancer hyperthermia was confirmed by the acoustic field analysis and the heating test with TMM(tissue mimicking) phantom.

Thermo-piezoelectric $Si_3N_4$ cantilever array on a CMOS circuit for probe-based data storage using wafer-level transfer method (웨이퍼 본딩을 이용한 탐침형 정보 저장장치용 압전 켄틸레버 어레이)

  • Kim Young-Sik;Jang Seong-Soo;Lee Caroline Sun-Young;Jin Won-Hyeog;Cho Il-Joo;Nam Hyo-Jin;Bu Jong-Uk
    • Transactions of the Society of Information Storage Systems
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    • v.2 no.2
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    • pp.96-99
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    • 2006
  • In this research, a wafer-level transfer method of cantilever away on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

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