• Journal of the Korean Ceramic Society
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• v.20 no.3
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• pp.227-235
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• 1983

The dielectric and piezoelectic properties in which $(Zr_{0.52} Ti_{0.48})^{+4}$ ions of $Pb(Zr_{0.52} Ti_{0.48})O_3$ are partially substituted for $W^{+6}$ ions were studied. $ZrTiO_4$ was made by coprecipitation. The specimens of disc shape were sintered respectively at 1180$^{\circ}$to 130$0^{\circ}C$ at an intervals of 2$0^{\circ}C$ for 1 hour. The optimum sintering temperature were found to be between 126$0^{\circ}C$ and 128$0^{\circ}C$. PZT solid solutions sintered had the tetragonal structure with c/a=1.025$\pm$0.005 and theoretical densities incre-ased from 8.02 to 8.17g/cm3 with increasing the amount of the partial substitution of $(Zr_{0.52} Ti_{0.48})^{+4}$ ion for $W^{+6}$ ion The grain size and curie temperature decreased with increasing the amount of $WO_3$ while the dielectric constant increased. When $(Zr_{0.52} Ti_{0.48})^{+4}$ ion was substituted for 1 mole% of $W{+6 ]$ion the planar coupling coefficient$(K_P)$ was as high as 0.58 But as the amount of $WO_3$ increased the mechanical quality factor(Qm) decreased considerably.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.881-884
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• 2000

Recently mobile communication fields need piezoelectric ceramic resonators and filters as possible as small. The length-extensional vibration mode of a rectangular piezoelectric cesamic plate has the advantage of the small size, but the mode has not been studied sufficiently because it was not used extensively until now. In this paper, PZT + x[wt%l $Cr_20_3$ ceramics with rhombohedra1 phase were fabricated. And temperature stability for the mode of the ceramic specimen was investigated. Contrary to our expectations, addition of the stabilizer, $Cr_20_3$ did not promote the temperature stability for the mode in the PZT ceramic specimen with rhombohedra1 phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1174-1177
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• 2004

The dielectric and piezoelectric properties of silver added 0.96 Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$-0.04 Pb(Mn,W,Sb,Nb)$_3$ ceramics were examined. By varying the contents of silver(0.0, 0.4, 1.0 mol%), the effect of silver addition on PZT-PMWSN ceramics was investigated at various sintering temperature(900, 1000, 1100 $^{\circ}C$). As increasing silver contents, the relative dielectric constant was increased and sinterability was enhanced. At the specimen with 0.4 mol% Ag and sintered at 1000 $^{\circ}C$, electromechanical coupling factor( $k_{p}$), mechanical quality factor( $Q_{m}$), dielectric constant($\varepsilon$$_{r}$) and dielectric loss were 0.502, 811, 991, 0.006, respectively. The results showed that the PZT-PMWSN/Ag composites have enhanced piezoelectic and dielectric properties and sintering temperature was lowered.red.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.417-421
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• 2006

In this study, in order to develop low temperature sintering piezoelectric ceramics for LTCC (Low-Temperature Cofired Ceramic) multilayer piezoelectric actuator, PMW-PMN-PZT ceramics using $0.2wt%\; Li_2CO_3$ and $0.25wt%\;CaCO_3$ as sintering aids were investigated according to the varation of PMW substution. Composition ceramics could be sintered at $900^{\circ}C$ by adding sintering aids. As the amount of PMW substitution increased, the crystal structure of PMW-PMN-PZT ceramics moved from tetragonal phase to rhombohedral phase gradually, and MPB(Morphotrophic Phase Boundary) region appeared at 2 mol% PMW substitution. At the sintering temperature of $900^{\circ}C$, the density, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\epsilon}r$), piezoelectric constant(d33) and Curie temperature(Tc) of 2 mol% PMW substituted PMW-PMN-PZT ceramics showed the optimal values of $7.88g/cm^3$, 0.58, 1002, 1264, 352 pC/N and $336^{\circ}C$, respectively, for LTCC multilayer piezoelectric actuator application.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.157-160
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• 2002

The ferroelectric domain variation and electrical performance of $Pb(Zr,Ti)O_{3}$ (PZT) based capacitors through La additions were systematically studied. La substitution up to 10 % was performed to lower the coercive and saturation voltages of epitaxial ferroelectric capacitors grown on Si using a (Ti_{0.9}Al_{0.1})N/Pt$ conducting barrier composite. Ferroelectric capacitors substituted with 10 % La show significantly lower coercive voltage compared to capacitors with 0 % and 3 % La. This is attributed to a systematic microstructure change into $180^{\circ}C$ domain and decrease in the tetragonality (i.e., c/a ratio) of the ferroelectric phase. These capacitors show promise as storage elements in low power memory architectures.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.141-153
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• 1997

The paraelectric cubic-to-ferroelectric tetragonal phase transition of the thin Pb(Zr, Ti)$O_3$ (PZT) films grown on MgO(001) substrate was investigated in a series of synchrotron x-ray scattering experiments. As the thickness of the film decreases the transition temperature and the amount of the tetragonal distortion were decreased continuously Different from only the c-domains were existent in the thinnest 25nm thick film. Based on this we propose a model for the domain structure of the tetragonal PZT/MgO(100) film that is very different from the ones suggested in literature. We attribute the suppression of the transition to the substrate field that prefers the c-type domains near the interface and suppresses the tetragonal distortion to minimize the film-substrate lattice mismatch.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.795-800
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• 2003

The dielectric and piezoelectric properties of the xPb(A $l_{0.5}$N $b_{0.5}$) $O_3$-(1-x)Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$ [xPAN-(1-x)PZT] thin films by pulsed laser deposition (PLD) were investigated as a function of PAN contents. The effect of texture on dielectric and piezoelectric properties of the 0.05PAN-0.95PZT thin films having the highest piezoelectric constant( $d_{33}$) was studied more precisely. For 0$\leq$x$\leq$0.15 compositions in xPAN-(1-x)PZT thin films, the well-developed perovskite phase with (111) preferred orientation was obtained at the deposition temperature of 50$0^{\circ}C$. With increasing PAN content, remanent polarization and coercive field decreased. The dielectric constant increased with an increase of PAN content until it reached 1450 at $\chi$= 0.05, and then decreased for higher PAN content. The maximum points of dielectric constant coincides with the maximum points of the piezoelectric constant $d_{33}$.33/.33/././.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.184-189
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• 2004

The effects of $Y_2$ $O_3$-substitution on the piezoelectric properties of Pb[(N $i_{1}$3/N $b_{2}$3/)$_{0.15}$(Z $r_{1}$2/ $Ti_{1}$2/)$_{0.85}$] $O_3$ceramics were investigated. It was found that $Y^{3+}$ ions incorporate into Pb-sites of the ceramics, resulting in a increased lattice anisotropy and formation of Pb-vacancies. As a result, an orthorhombic-tetragonal phase transition was induced when $\chi$>0.005. At the morphotropic phase boundary of x=0.005, piezoelectric constants( $k_{p}$, $k_{33}$, and $d_{33}$) showed maximum values of 0.53, 0.58, and 350pC/N, respectively. A 30-layer actuator fabricated with the above material showed a maximum strain of 0.12％ under 100V DC bias.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.71-73
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• 2005

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(20/80) and PZT(80/20) paste were made and alternately screen-printed on the alumina substrates. The coating and drying procedure was repeated 4 times to form the heterolayered thick films. The thickness of the PZT heterolayered thick films was approximately 60 mm. All PZT thick films showed the typical XRD patterns of a perovskite polycrystalline structure. The relative dielectric constant and the dielectric loss of the PZT thick films sintered at $1050^{\circ}C$ were 1382 and 1.90%, respectively. The remanent polarization and coercive field of the PZT thick films sintered at $1050^{\circ}C$ were $14.15{\mu}C/cm^2$ and 19.13kV/cm, respectively.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.167.1-167
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• 2002