• 한국전기전자재료학회논문지
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• 제24권10호
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• pp.799-802
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• 2011

In this study, SiC single-crystal ingots were prepared on two seed crystals with different doping level by using the physical vapor transport (PVT) technique; then, SiC crystal wafers sliced from the grown SiC ingot were systematically investigated to find the effect of seed doping level on the doping concentration and crystal quality of the SiC. To exclude extra effects induced by adjustment of the process parameters, we simultaneously grew the SiC crystals on two seed crystals with different level, which were fabricated from previous two SiC crystal ingots.

• Plant Biotechnology Reports
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• 제4권2호
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• pp.139-148
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• 2010

Jatropha curcas L. (Physic nut) is a commercially important non-edible oil seed crop known for its use as an alternate source of biodiesel. In order to investigate the morphogenic potential of immature embryo, explants from four developmental stages were cultured on medium supplemented with combinations of auxins and cytokinins. It was found that the size of embryo is critical for the establishment of callus. Immature embryos (1.1-1.5 cm) obtained from the fruits 6 weeks after pollination showed a good response of morphogenic callus induction (85.7%) and subsequent plant regeneration (70%) with the maximum number of plantlets (4.7/explant) on Murashige and Skoog's (MS) medium supplemented with IBA (0.5 $mg\;l^{-1}$) and BA (1.0 $mg\;l^{-1}$). The above medium when supplemented with growth adjuvants such as 100 $mg\;l^{-1}$ casein hydrolysate + 200 $mg\;l^{-1}$ L-glutamine + 8.0 $mg\;l^{-1}$ $CuSO_4$ resulted in an even higher frequency of callus induction (100%). Plant regeneration (90%) with the maximum number of plantlets (10/explant) was achieved on MS medium supplemented with 500 $mg\;l^{-1}$ polyvinyl pyrrolidone + 30 $mg\;l^{-1}$ citric acid + 1 $mg\;l^{-1}$ BA + 0.5 $mg\;l^{-1}$ Kn + 0.25 $mg\;l^{-1}$ IBA. It was observed that plantlet regeneration could occur either through organogenesis of morphogenic callus or via multiplication of pre-existing meristem in immature embryos. The age of immature embryos and addition of a combination of growth adjuvants to the culture medium appear to be critical for obtaining high regeneration rates. Well-developed shoots rooted on half-halfstrength MS medium supplemented with 0.5 $mg\;l^{-1}$ IBA and 342 $mg\;l^{-1}$ trehalose. The rooted plants after acclimatization were successfully transferred to the field in different agro-climatic zones in India. This protocol has been successfully evaluated on five elite lines of J. curcas.

• 한국결정성장학회지
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• 제20권3호
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• pp.117-124
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• 2010

For Ar=5, Pr=1.18, Le=0.15, Pe=2.89, Cv=1.06, $P_B$=20 Torr, the effects of impurity $(N_2)$ on thermally and solutally buoyancy-driven convection ($Gr_t=3.46{\times}10^4$ and $Gr_s=6.02{\times}10^5$, respectively) are theoretically investigated for further understanding and insight into an essence of thermo-solutal convection occurring in the vapor phase during the physical vapor transport. For $10K{\leq}{\Delta}T{\leq}50K$, the crystal growth rates are intimately related and linearly proportional to a temperature difference between the source and crystal region which is a driving force for thermally buoyancy-driven convection. Moreover, both the dimensionless Peclet number (Pe) and dimensional maximum velocity magnitudes are directly and linearly proportional to ${\Delta}T$. The growth rate is second order-exponentially decayed for $2{\leq}Ar{\leq}5$. This is related to a finding that the effects of side walls tend to stabilize the thermo-solutal convection in the growth reactor. Finally, the growth rate is found to be first order exponentially decayed for $10{\leq}P_B{\leq}200$ Torr.

• 한국결정성장학회지
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• 제23권6호
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• pp.279-282
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• 2013

최근 관심이 높아지고 있는 GaN, SiC 단결정과 함께 자외선 LED 및 전력 반도체 용 기판 소재로서 응용성이 높은 질화갈륨(AlN, Aluminum Nitride) 단결정을 성장하였다. 아직 상용화된 AlN 기판은 없지만, 단결정 성장에 대한 연구가 이루어지고 있다. 본 연구에서는 국내 최초로 AlN 단결정의 성장 결과 직경 약 8 mm의 결정을 성장하였다. 성장된 단결정은 광학현미경으로 관찰하였으며, DCXRD를 통하여 결정성을 평가한 결과를 보고하고자 한다.

• 한국결정성장학회지
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• 제20권3호
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• pp.125-132
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• 2010

For typical governing dimensionless parameters of Ar = 5, Pr = 1.16, Le = 0.14, Pe = 3.57, Cv = 1.02, $Gr_s=2.65{\times}10^6$, the effects of thermo physical properties such as a molecular weight, a binary diffusivity coefficient, a partial pressure of component B on solutally buoyancy-driven convection (solutal Grashof number $Gr_s=2.65{\times}10^6$) are theoretically investigated for further understanding and insight into an essence of solutal convection occurring in the vapor phase during the physical vapor transport of a $Hg_2Cl_2-N_2$ system. The solutally buoyancy-driven convection is significantly affected by any significant disparity in the molecular weight of the crystal components and the impurity gas of nitrogen. The solutal convection in a vertical orientation is found to be more suppressed than a tenth reduction of gravitational accelerations in a horizontal orientation. For crystal growth parameters under consideration, the greater uniformity in the growth rate is obtained for either solutal convection mode in a vertical orientation or thermal convection mode in horizontal geometry. The growth rate is also found to be first order exponentially decayed for $10{\leq}P_B{\leq}200$ Torr.

• 한국결정성장학회지
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• 제19권3호
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• pp.116-124
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• 2009

Our computational studies for the physical vapor transport crystal growth of $Hg_2Cl_2-Cl_2$ system evidence suggests that the PVT growth process exhibits the diffusion-dominated behaviors for aspect ratios more than and equal to 10, which would provide purely diffusive transport conditions adequate to microgravity environments less than $10^{-3}g_0$. Also, the regimes of high temperature difference based on the fixed source temperature of $380^{\circ}C$, where ${\Delta}T$ is relatively large enough for the crystal growth of mercurous chloride, the transport rates do not keep increasing with ${\Delta}T$ but tend to some constant value of $2.12\;mole\;cm^{-2}s^{-1}$. For the aspect ratios of 5, 10, and 20, the transport rate is directly proportional to the total pressure of the system under consideration. For Ar = 5, the rate is increased by a factor of 2.3 with increasing the total pressure from 403 Torr to 935 Torr, i.e., by a factor of 2.3. For both Ar = 10 and 20, the rate is increased by a factor of 1.25 with increasing the total pressure from 403 Torr to 935 Torr.

• 한국결정성장학회지
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• 제27권1호
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• pp.57-63
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• 2017

High-purity ${\beta}-SiC$ powders for SiC single-crystal growth were synthesized by direct carbonization. The use of high-purity raw materials to improve the quality of a SiC single crystal is important. To grow SiC single crystals by the PVT method, both the particle size and the packing density of the SiC powder are crucial factors that determine the sublimation rate. In this study, we tried to produce high-purity ${\beta}-SiC$ powder with large particle sizes and containing low silicon by introducing a milling step during the direct carbonization process. Controlled heating improved the purity of the ${\beta}-SiC$ powders to more than 99 % and increased the particle size to as much as ${\sim}100{\mu}m$. The ${\beta}-SiC$ powders were characterized by SEM, XRD, PSA, and chemical analysis to assess their purity. Then, we conducted single-crystal growth experiments, and the grown 4H-SiC crystals showed high structural perfection with a FWHM of about 25-48 arcsec.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.61-64
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• 2010

In this paper, we investigate the quality difference of SiC crystals grown by a conventional physical vapor transport method using various SiC powders. While the growth rate was revealed to be dependent upon the particle size of the SiC powder, the growth rate of SiC bulk crystals grown using SiC powder with a smaller particle size (20 nm) was definitely higher than those using lager particle sizes with $0.1-0.2\;{\mu}m$ and $1-10\;{\mu}m$, respectively. All grown 2 inch SiC single crystals were proven to be the polytype of 6H-SiC and the carrier concentration levels of about $10^{17}\;cm^3$ were determined from Hall measurements. It was revealed that the particle size and process method of SiC powder played an important role in obtaining a good quality, high growth rate, and to reduce growth temperature.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 13th KACG Technical Meeting `97 Industrial Crystallization Symposium(ICS)-Doosan Resort, Chunchon, October 30-31, 1997
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• pp.39-43
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• 1997

Mercurous chloride (Hg$_2$Cl$_2$) has many advantages in its applications to acousto-optic, and opto-electronic devices because it has the unique properties of a broad transmisson range, well into the far infra-red, a low acoustic velocity, a large birefringence, and a high acousto-optic figure of merit[1]. Hg$_2$Cl$_2$ has a high vapor pressure, hence single crystals are usually grown by physical vapor transport(PVT) method in closed silica glass ampoules. We discuss the application of the laser Doppler velocimetry to measure the flow field inside a closed ampoule. The experimental results, are discussed its relationship to computational model and compared to their expectations.

• 한국결정성장학회지
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• 제9권1호
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• pp.94-100
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• 1999

음향광 소재와 광전자 재료용으로 적합한 염화제일수은은 밀폐된 용기에서 승화법에 의한 결정성장으로 제 조된다. 온도경계조검으로 밀폐된 용기의 측면에 각각 다른 온도로 부하하였을 때에는 수직적과 수평적 대류현상이 동 시에 일어난다. 수직적 레이 무차원수에 대한 수평적 레이 무차원수의 비율이 1.5 보다 클 때, 대류유동구조는 $2.79{\times}10^4$, Pr = 0.91, Le = 1.01, Pe = 4.60, Ar = 0.2 and $C_v$ = 1.01에서 한 개의 셀에서 여러개의 셀로 변한다. ${Delta}T_H{\ge}0.3$에 대하여, ${Delta}T$의 증가함과 엑스펙트 비율의 감소함에 따라 $$\mid$U$\mid$_{max}$이 증가한다. 0.1에서 1까지의 엑스펙트 비율의 범위에서는 $$\mid$U$\mid$_{max}$가 $\sqrt{{\Delta}T^_H\;^{\ast}}$와 직접적이며 선형적인 관계에 있다. 엑스페트 비율이 감소함에 따라 대류의 흐름은 불안정 하게 되며, 그 결과 대류의 크기는 증가한다. 수직적 온도구배는 대류의 흐름을 불안정하게 하여 진동하게 하며, 그 반면 에 수명적 구배는 흐름을 안정화시킨다.