• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.96-99
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• 2000

We fabricated electroluminescent(EL) devices which have a blended single emitting layer containing poly(N-vinylcarbazole)[PVK] and poly(3-dodecylthiophene)[P3DoDT]. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer, between polymer emitting layer and Al electrode. All of the devices emit orange-red light and its can be explained that the energy transfer occurs from PVK to P3DoDT. In the voltage-current and voltage-light power characteristics of devices applied LiF layer, current and light power drastically increased with increasing applied voltage. In the consequence of the result, the external quantum efficiency of the devices that have a molar ratio 1:1 with LiF layer was 35 times larger than that of the device without LiF layer at 6V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.331-334
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• 2000

The organic electroluminescent(EL) device has gathered much interest because of its large potential in materials and simple device fabrication. We fabricated EL devices which have a blended single emitting layer containg poly(Nvinylcarbazole)[PVK] and poly(3-dodecylthiophene)[P3DoDT]. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer between polymer emitting layer and AI electrode. All of the devices emit orange-red light and it's can be explained that the energy transfer occurs from PVK to P3DoDT. Within the molar ratio 1:0, 2:1 and 1:1, the energy transfer was not saturated, which results in the not appearance of PVK emission in the blue region. In the voltage-current and voltage-light power characteristics of devices applied LiF layer, current and light power drastically increased with increasing with applied voltage. In the consequence of the result, the light power of the device have a molar ratio 1:1 with LiF layer was about 10 times larger than that of the device without PVK at 6V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.393.1-393.1
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• 2014

유기물/무기물 나노복합체를 이용하여 제작한 유기비휘발성 메모리 소자는 간단한 공정과 플렉서블기기 응용 가능성 때문에 많은 연구가 진행되고 있다. 유기물/무기물 나노복합체를 사용하여 제작한 비휘발성 메모리 소자의 전기적 성질에 대한 연구는 많이 진행되었으나, Poly (N-vinylcarbazole) (PVK) 박막 내부에 분산된 친환경 CuInS2 (CIS) 나노입자를 이용하여 제작한 유기 쌍안정 소자의 메모리 특성에 대한 연구는 미미한 실정이다. 본 연구에서는 PVK박막층안에 분산된 CIS나노입자를 사용한 메모리 소자를 제작하여 전기적 특성에 대하여 연구하였다. 화학적으로 합성 된 CIS 나노입자를 톨루엔에 용해되어있는 PVK에 넣고 초음파 교반기를 사용하여 두 물질을 고르게 섞었다. 전극이 되는 indium-tin-oxide 가 성장된 유리 기판 위에CIS 나노입자와 PVK가 섞인 용액을 스핀코팅 한 후, 열을 가해 용매를 제거하여 CIS 나노입자가 PVK에 분산되어 있는 나노복합체 박막을 형성하였다. 형성된 나노복합체 박막 위에 상부 전극으로 Al을 열증착하여 비휘발성 메모리 소자를 제작하였다. 제작된 소자의 전류-전압 측정 결과는 메모리 특성을 나타내었으며, CIS 나노입자를 포함하지 않은 소자와의 비교를 통해 CIS나노입자가 비휘발성 메모리 소자에서 메모리 특성을 나타내게 하는 역할을 확인하였다. 전류-시간 측정 결과 소자의 ON/OFF 전류 비율이 시간에 따라 큰 변화 없이 1,000 회 이상 지속적으로 유지함을 관찰함으로써 소자의 전기적 기억 상태 안정성을 확인하였다.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2008년도 추계학술발표논문집
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• pp.201-203
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• 2008

ITO 투명전극을 양극으로 사용하고 PEDOT:PSS 고분자 물질위에 PVK와 Ir(ppy)3를 각각 host와 dopant로 사용하여 고분자 발광다이오드를 제작하였다. 전자 수송층의 역할로 TPBI, 음극으로 Al을 증착하여 최종적으로 ITO/PEDOT:PSS/PVK:Ir(ppy)3/TPBI/LiF/Al 구조를 갖는 녹색 인광 고분자 유기발광소자(PhPLED)를 제작하였다. 제작 된 소자의 발광부 dopant인 Ir(ppy)3도핑 농도에 따른 전기적 광학적 특성을 평가하였다. PVK:Ir(ppy)3를 host와 dopant system으로 dopant Ir(ppy)3의 도핑 양을 0.5 wt%에서2.5 wt%까지 씩 변화시키면서 최적의 농도를 찾고자 하였다. TPBI를 전자 수송층으로 사용 하였을 경우 최대 휘도는 약 8600 cd/$m^2$ (at 8V)이고, 전류밀도는 337mA/$cm^2$ 를 나타내었다.

• Transactions on Electrical and Electronic Materials
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• 제6권3호
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• pp.101-105
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• 2005

Electroluminescence(EL) and current-voltage(I-V) characteristics of hybrid EL devices containing Pr and Mn co-doped ZnS nanoparticles were investigated in this study. For the insertion of a hole transport layer of poly (N-vinyl carbazole)(PVK), the current level became lower due to the accumulation of electrons at the interface between PVK and nanoparticles. When both PVK and buffer layer $BaF_2$ were simultaneously introduced, the enhanced EL efficiency and improved I-V characteristics were obtained. This results from the additional increase of hole injection owing to the internal field induced by the significant accumulation of electrons at the interface. The presence of buffer layer $BaF_2$ together with PVK makes it possible the charge accumulation enough to induce the sufficient internal field for further hole injection.

• Macromolecular Research
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• 제15권2호
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• pp.142-146
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• 2007

Poly[(1-(9-carbazoly1)ethylene)-co-(3-cinnamoyloxyoctyl-9-carbazolyl)] ethylene (PVK-Cin) was prepared by tethering cinnamate pendants to a carbazole group via an octylene spacer. The photopatternability of the new PVK based-polymer was investigated using a photocrosslinking reaction under UV light illumination $(\lambda=254nm)$. Blends of the PVK-Cin and a soluble poly(phenylene vinylene) (CzEh-PPV) were employed to study the photocrosslinking behavior. Well resolved lithographic patterns were observed in these polymer systems. PVK-Cin produced a blue light emitting pattern both before and after the photocrosslinking reaction. The blends of PVK-Cin and CzEh-PPV also showed corresponding emissions at 398 and 525 (560) nm in the film state.

• Bulletin of the Korean Chemical Society
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• 제31권10호
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• pp.2967-2972
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• 2010

Poly-N-vinylcarbazole/polyaniline (PVK-PANI) composites are synthesized by varying target loading concentrations of aniline (0.025 - 0.1 M). The surface morphology of the composites is studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The temperature-dependent DC conductivity of PVK-PANI composite films was studied at the temperature range of 300 - 500 K. The data suggest that the conductivity increase with an increase in aniline concentration in the composite with an increase in temperature. Further based on the conductivity behavior we can suggest that the PVK-PANI composites show a semiconducting behavior with a positive temperature coefficient of resistivity (TCR). The enhanced conductivity and the positive TCR of the PVK-PANI composite films may be due to the strong interaction between PANI and PVK in the composite films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.182-183
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• 2008

We fabricated a pentacene thin film transistor with Poly-vinylalcohol (PVA) as a dielectric. And we used Poly(9-vinylcarbazole) (PVK) as a buffer layer to improve the electrical characteristics. PVK is a material used often host material for OLED device, as it has good film forming properties, large HOMO-LUMO(highest occupied molecular orbital-lowest unoccupied molecular orbital) bandgap. The performance of a OTFT device with PVA gate dielectric was improved by using the PVK. Field effect mobility, threshold voltage, and on-off current ratio of device with PVK layer were about 0.6 $cm^2$/Vs, -17V, and $5\times10^5$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.153-153
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• 2010

We have developed blue phosphorescent organic light emitting diode using spin-coated poly(9-vinylcarbazole) (PVK) host layer doped with blue phosphorescent material, Iridium(III) bis(4,6-difluorophenyl)-pyridinato-N,C2) picolinate (FIrpic). the concentration of FIrpic dopants was varied from 2% to 10%. The electrical and optical characteristics of the blue phosphorescent OLED with PVK:FIrpic layer were investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.766-769
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• 2002

We have seen the effects of hole-injection buffer layer in organic light-emitting diodes using copper phthalocyanine(CuPc), poly(vinylcarbazole)(PVK), and Poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate)(PEDOT:PSS) in a device structure of ITO/buffer/TPD/$Alq_3$/Al. Polymer PVK and PEDOT:PSS buffer layer was made using spin casting method and the CuPc layer was made using thermal evaporation. Current-voltage characteristics, luminance-voltage characteristics and efficiency of device were measured at room temperature with a thickness variation of buffer layer. We have obtained an improvement of the external quantum efficiency by a factor of two, four, and two and half when the CuPc, PVK, and PEDOT:PSS buffer layer are used, respectively. The enhancement of the efficiency is attributed to the improved balance of holes and elelctrons due to the use of hole-injection buffer layer. The CuPc and PEDOT:PSS layer functions as a hole-injection supporter and the PVK layer as a hole-blocking one.