• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.91-92
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• 2007

An anomalous positive temperature coefficient of electrical resistivity (PTCR) was investigated in a ferroelectric lead-free perovskite-type compound $(Bi_{0.5}Na_{0.5})TiO_3$ within $BaTiO_3$-based solid solution ceramics. The effect of $Nb_2O_5$ content on the electrical properties and the microstructure of (1 - x) $BaTiO_3-x\;(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) ceramics made using a conventional mixed oxide process also has been studied. The Curie temperature was obviously increased with the increasing of $(Bi_{0.5}Na_{0.5})TIO_3$ content. The Nb - doped BNT ceramics (x=0.01) display low resistivity values of $10^{1{\circ}}C-10^{2{\circ}}C$ ohm.cm at room temperature and the Curie Temperature of $T_c=160^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.336-336
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• 2008

A positive temperature coefficient of electrical resistivity (PTCR) was investigated in a ferroelectric lead-free perovskite-type compound $(Bi_{0.5}K_{0.5})TiO_3$ within $BaTiO_3$-based solid solution ceramics. The electrical properties and the microstructure of (1-x) $BaTiO_3$ - x $(Bi_{0.5}K_{0.5})TiO_3$ (BBKT) ceramics made using a conventional mixed and have been synthesized by an ordinary sintering technique. The Curie temperature was obviously increased with increasing of $(Bi_{0.5}K_{0.5})TiO_3$ content. The BKT ceramics (x=0.05) sintered at $1400^{\circ}C$ for 4h display low resistivity values of $10^1-10^2$ ohm cm at room temperature, PTCR effect(jump) of 1.05*$10^3$, and the Curie temperature of $T_c=141^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.22-26
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• 2013

PTCR ceramics of $(Ba_{0.998}Sm_{0.002})TiO_3+0.001MnCO_3+xSiO_2$ (x=1, 2, 3, 4, 5, 6 mol%) were fabricated by solid state method. Disk samples of diameter 5 mm and thickness about 1mm were sintered at $1,290^{\circ}C$ for 2 h in reduced atmosphere of $5%H_2-95%N_2$ followed by re-oxidation at $600^{\circ}C$ for 30 min. in $20%O_2-80%N_2$.and their microstructures and electrical properties were investigated with SEM and Multimeter. The color of sintered samples was strongly dependent on $SiO_2$ content showing that the color of samples with $SiO_2$ of 1~2 mol% was gray but that of samples with $SiO_2$ of 4~6 mol% was changed from gray to blue, which seems to be related with the reduction of samples due to the oxygen vacancies created during the sintering in reduced atmosphere. $SiO_2$ content had a great influence on the microstructure and the electrical properties. With increasing $SiO_2$ content, the grain size of samples increased and the resistivity as well as the resistivity jump ($R_{285}/R_{min}$) decreased, which is considered to be attributed to the resistivity change at grain interior and grain boundary due to the fast mass transfer through $SiO_2$ liquide phase during the sintering. Samples with 2 mol% $SiO_2$ has the resistivity of $202{\Omega}cm$ and the resistivity jump of 3.28. It is expected that $SiO_2$ doped $BaTiO_3$ based PTC ceramics can be used for multilayered PTC thermistor due to the resistance to the sintering in reduced atmosphere.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.32-32
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• 2008

Microstructure and positive temperature coefficient of resistivity (PTCR) characteristics of $0.9BaTiO_3-0.1(Bi_{0.5}Na_{0.5})TiO_3$ [BaBiNT] ceramics doped with $Nb_2O_5$ were investigated in order to develop the Pb-free high Curie temperature ($T_c$)(>$160^{\circ}C$) PTC thermistor. The BaBiNT ceramics showed a tetragonal perovskite structure, irrespective of the added amount of $Nb_2O_5$. They also have a homogeneous microstructure. The resistivity of BaBiNT ceramics was gradually decreased by doping $Nb_2O_5$, which might be due to $Nb^{+5}$ ions substituting for $Ti^{+4}$ sites. The PTCR characteristics of BaBiNT ceramics appeared when the amount of doped $Nb_2O_5$ exceeded 0.0025mol%. Moreover, the abrupt grain growth was observed for the 0.03mol% $Nb_2O_5$added BaBiNT ceramics. It showed an especially high $T_c$ of approximately $172^{\circ}C$ and good PTCR characteristics of a high $\rho_{max}/\rho_{min}$ ratio ($2.96\times10^3$), a high resistivity temperature factor (11.40/$^{\circ}C$) along with a relatively low resistivity ($3.5\times10^4\Omega{\cdot}cm$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.182-182
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• 2009

The effect of Re-oxidation on the PTCR properties of Sm-doped barium titanate ceramics was investigated by means of impedance spectroscopy. Electrical properties such as resistance vs. temperature, I-V curve were measured and microstructure was observed with SEM photography. Sample was fabricated with thick film process such as tape casting of green sheet, screen printing of electrode pattern, stacking, firing in reduced atmosphere and re-oxidation, etc. As the temperature of re-oxidation increases, resistance jump as a function of temperature enhances but resistance at room temperature increases. These behavior of resistance as a function of temperature, dependent on the re-oxidation condition, is analyzed with Cole-Cole impedance plot and is shown to be related with the degree of oxidation of grain boundary regardless of grain core during re-oxidation process of sample.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.929-935
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• 2010

$(1-x)BaTiO_3-x(Bi_{0.5}Na_{0.5})TiO_3$ ($0.01{\leq}x{\leq}0.10$) ceramics were fabricated with muffled sintering by a modified synthesis process. Their positive temperature coefficient of resistivity (PTCR) characteristics were investigated systematically. All specimen showed a perovskite structure with a tetragonal symmetry. Both the lattice parameter of a and c axes were slightly decreased with increasing $(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) content. Grain growth was achieved when the incorporated BNT was increased to 6 mol% and the inhibition of grain growth is considered to be due to the appearance of Ba vacancy ($V^{"}_{Ba}$) in the $(1-x)BaTiO_3-x(Bi_{0.5}Na_{0.5})TiO_3$ ($0.08{\leq}x$). With 4 mol% BNT addition, room temperature resistivity decreased to $48 \Omega{\cdot}cm$ and a resistivity jump ($\rho_{max}/\rho_{min}$) was as high as $1.1{\times}10^4$, respectively. Curie temperature was also increased to $171^{\circ}C$ with increasing BNT content.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.151-159
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• 1998

Elelctrical properties of $BaTiO_3$ were characterized with addition of $Y_2O_3, CaO,SiO_2$ and Mn to develope the composition of PTC thermistor suitable as a current limiting device for automobile motor system. With the addition of 0.2 mol% $Y_{2}O_3$ to $BaTiO_3$, the minimum resistance of 16.5 ${\Omega}{\cdot}$cm was obtained at room temperature. $(Ba_{0.996}Y_{0.004})TiO_3$ exibited a minimum resistance of 50${\Omega}{\cdot}$cm with addition of 1.6 mol% $SiO_2$. The grain size of $(Ba_{0.996}Y_{0.004})TiO_3$ decreased from 34.95 ${\mu}$m to 13.4 ${\mu}$m and thus breakdown voltage could be improved by changing the composition as $(Ba_{0.996}Y_{0.004}Ca_{0.05}) TiO_3$ with substition of 5 mol% Ca into Basites. When 0.04 mol% Mn was added, the optimum PTCR properties could be obtained : the resistivity at room temperature and ${\rho}_{max}/{\rho}_{min}$ were 30~40${\Omega}{\cdot}$cm and $1.5{\times}10^5$ respectively.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.525-530
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• 2011

We investigated the electrical properties the starting material and sintering condition on the laminated PTC thermistor for micro circuit protection. The influences of $BaTiO_3$ powder with the 0.3 and 0.45 ${\mu}m$ size and the electrical characteristics (Ba,Sr)$TiO_3$ sintered at 1350~1400$^{\circ}C$ for 2 h in a reducing atmosphere (1% $H_2/N_2$). The sintered (Ba,Sr)$TiO_3$ was increased pore and the grain size was decreased according to increasing Sr additions. In relative permittivity, the phase transition temperature of (Ba,Sr)$TiO_3$ was decreased for 2.5$^{\circ}C$ according to increasing 0.01 mole Sr additions, and the phase transition dose not appeared about 0.3 mole Sr addition. The (Ba,Sr)$TiO_3$ was show the low resistance from 0.01 mole to 0.05 mole by Sr addition, regardless of sintering temperature. The (Ba,Sr)$TiO_3$ was show $10^2$ jump order at 0.1 and 0.2 mole Sr addition, and PTCR of the sintered $(Ba_{0.7}Sr_{0.3})TiO_3$ does not appeared about 0.3 mole Sr addition, regardless of the sintering temperature and starting material size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.251-251
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• 2007

A new type of a lead-free positive temperature coefficient of resistivity(PTCR) material. based on $(Bi_{1/2}Na_{1/2})TiO_3\;-\;BaTiO_3$ solid solution ceramics has been developed. The effect of $Nb_O_5$ and $Y_2O_3$ content on the electrical properties and the microstructure of (1-x) $(Bi_{1/2}Na_{1/2})TiO_3\;-\;x\;BaTiO_3$ (BNBT) ceramics made using a conventional mixed oxide process has been studied. The Curie Temperature was obviously increased with the increasing of $(B_{0.5}Na_{0.5})TiO_3$ content. The Y-doped BNBT ceramics(x=0.02) display low resistivity values of $10^2-10^3$ ohm*cm at room temperature and the Curie Temperature of $Tc=155^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.278-281
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• 1991

1) The specimen with 0.175[mol%] of additive $Sb_2O_3$ was minute and didn't appear porosity. The relation between the ratio of resistivity at $160^{\circ}C$ to that at $121^{\circ}C$ of the specimen with 0.175[mol%] of additive $Sb_2O_3$ was $3{\times}10^4$ and it's great value from among specimens. 2) The curie temperature of the specimen with 0.2 [mol%] of additive $Sb_2O_3$ was $140^{\circ}C$ AND it's great value from among specimens and those of other were $121^{\circ}C$ in all therefore, the specimen with above 0.2[mol%] of additive $Sb_2O_3$ is not match for PTCR 3) The variation of radiation properties of the specimen with 0.2[mol%] of additive $Sb_2O_3$ was very steep in the range of far-infrared $5{\sim}10[{\mu}m]$ but radiation percentage was very high of 0.92 in the range of $10[{\mu}m]$.