• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.121-127
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• 1998

In this paper, to develop PTCR(Positive Temperature Coefficient of Resistance) thermistor with high withstanding voltage, Ca were added to. the compositions of $(Ba_{0.9165-X}-Sr_{0.08}-Ca_X-Y_{0.0035})TiO_3+MnO_2$ 0.02wt%+$SiO_2$ 0.5wt%. the effects of Ca additions were researched according the increasing of Ca from 0[mol%] to 20[mol%], and the electrical properties were investigated. As increasing Ca additions from 0[mol%] to 20[mol%], the grain size of the specimens was reduced from 11.1[${\mu}m$] to 6.15[${\mu}m$], and also the sintered density was reduced from 5.43[$g/cm^3$] to 5.05[$g/cm^3$] and their the breakdown voltages were increased from 163[V/mm] to 232[V/mm]. It is shown that the breakdown voltage was increased with amount of Ca additions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.235-236
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• 2006

The contact resistance and grain boundary potential barrier of ceramic $BaTiO_3$ PTCR were investigated. The electroless plated Ni, evaporated Al, and Ag paste were chosen as electrode materials of PTCR device for comparison analysis before and after heat treatment. The contact resistance of electrode were measured by electrometer (dc), digital multimeter (dc), and LCR meter (ac). In the case of Al electroded samples, the heat treatment and protective oxide layer had high resistance and effect on the stability of PTCR effect against contact resistance degradation, but the Ag-paste had comparably high contact resistance before heat treatment and decreased after heat treatment with safe. On the other hand, the samples with electroless plated Ni electrode had good properties of contact resistance against aging.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.77-82
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• 1995

PTCR(Positive Temperature Coefficient of Resistivity) thermistor in thin film BaTiO$_{3}$ system was prepared by using radio frequency(13.56 MHz) and DC magnetron sputter equipment. Polycrystalline, surface structure, and R-T(Resistivity-Temperature) characteristics of the specimens were measured by X-ray diffraction(D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M.JSM84 01, Japan), and insulation resistance measuring system (Keithley 719), respectively. Thin films characteristics of the thermistor showed different properties depending on the substrate even with the same sputtering condition. The thin film formed on the A1$_{2}$O$_{3}$ substrate showed a good crystalline and a low resistivity at below curie point. However, the thin films prepared on slide glass and Si wafer were amorphous. The thicknesses of the three samples prepared under the same process conditions were 700[.angs.], 637.75[.angs.], and 715[.angs.], respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.181-181
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• 2007

PTCR 세라믹스를 적층형 부품으로 제조할 경우 소형화, 저 저항화 및 과전류 유입 시 빠른 응답특성을 갖는다는 장점을 가지고 있으며, 이러한 적층형 부품제조시에는 내부전극재가 부품소자의 물성에 중요한 영향을 미친다. 특히 우수한 옴성 접촉(Ohmic Contact)을 갖는 Zn, Fe, Sn, Ni 등의 적층 PTC용 전극재는 높은 산화특성으로 인해 재산화 과정에서의 비옴성 접촉(Non-ohmic contact)을 갖게 되어 PTC 특성을 저하시킬 우려가 있다. 따라서 본 연구에서는 적층형 PTCR 세라믹스의 내부전극재와 반도체 세라믹층의 동시소성거동 및 적층 PTCR 세라믹스의 전기적 특성을 평가하였다. 본 연구에 적용된 내부전극재로는 Ni 전극을 사용하였고, Ni 전극용 paste로는 무공제 paste, 반도체 세라믹공제 paste, $BaTiO_3$ 공제 paste의 3종 전극재가 이용되었다. 적층형 PTCR 세라믹스의 제조공정은 테이프 캐스팅(Tape casting), 내부전극인쇄, 적층 및 동시소성을 포함하는 적층화공정을 적용하였다. 각각의 전극 paste를 적용하여 제조된 chip은 미세구조관찰, I-V특성, R-T특성 등을 평가하여 내부전극내 세라믹공제의 영향을 고찰하였다.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.1
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• pp.63-72
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• 1998

후막 PTC를 제조하기 위하여 BaTiO3 주원료에 Sb2O3와 MnO2를 첨가한 PTC 페이 스트를 ZrO2와 BaTiO3 기판위에 인쇄한후 13$25^{\circ}C$에서 1시간 동안 소결하였다. BaTiO3 기판 위에 형성된 PTC후막은 PTCR 특성을 나타내었다. 그러나 ZrO2기판위에 인쇄된 시편의 경 우 PTCR특성이 나타나지 않았다. 이것은 ZrO2기판과 인쇄된 PTC페이스트간의 열팽창계수 차이에 의한 thermal cracking 때문에 후막 PTC 형성이 불가능함을 보여주었다.

• Journal of the Microelectronics and Packaging Society
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• v.4 no.2
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• pp.41-46
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• 1997

지향성이 좋고 에너지밀도가 높고 집광성이 뛰어난 Nd:YAG레이저를 이용해서 원거 리 레이저 조사를 통한 서미스터의 PTCR 특성을 관찰하여 원격 제어를 시도를하였다. 1064nm의 Nd:YAG레이저 광선을 BaTiO3 서미터 표면에 1m 거리에서 5mm2 빔 사이즈로 50~200mJ/pulse, 10Hz의 조건에서 조사하였을 때 서미스터의 전기저항변화는 약 103 정도 로 레이저 조사에 의하여 원격으로 PTCR 특성을 제어 할수 있었다.

• Proceedings of the KIEE Conference
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• 1995.07a
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• pp.104-106
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• 1995

A curious resistivity anomaly in high curie point barium-lead-titanate materials with positive temerature coefficient of resistivity (PTCR) has been observed just below the curie point, besides the normal PTCR anomaly. The additional resistivity anomaly was observed in the resistivity-temperature characteristics.

• 전기의세계
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• v.31 no.6
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• pp.437-444
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• 1982

Although several kinds of conduction mechanism of PTC thermistor have been reported, there were few satisfying results. In this paper, the reported conduction mechanism theories were scrutinized and analyzed by using the experimental results. PTC thermistors for this study were manufactured by adding Sb$\_$2/O$\_$3/, AI$\_$2/O$\_$3/, TiO$\_$2/, and SiO$\_$2/ to BaTiO$\_$3/, and by sintering it at different temperatures. In order to analyze the conduction mechanism, R-T characteristics and its frequency dependence of specimens were measured. And also, the structures of specimens were studied. Especially this paper emphasized the explanation of the resistivity characteristics as the grain growth state of PTC thermistor specimens with respect to soaking temperature. According to the results, the resistivity of PTC thermistor whose grain was formed by semiconducting, was independent to the grain size at room temperature. For small and uniform grain size, the slope of the resistivity near the Curie temperature and the resistivity above the Curie temperature became greater and PTCR effect was improved.

• Journal of the Korean Ceramic Society
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• v.49 no.5
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• pp.432-437
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• 2012

Electrical properties of the laminated SMD-type PTC thermistor for microcircuit protection were investigated as a function of calcination and sintering temperature. $BaTiO_3$ with $Y_2O_3$ and $MnO_2$ were calcined at 1000 to $1150^{\circ}C$ for 2h and the laminated SMD-type PTC thermistor was sintered at 1350 to $1400^{\circ}C$ for 2h in a reduced atmosphere (1% $H_2/N_2$). Sintered density of the sample was dependent on the calcination and sintering temperature. Electrical properties of the sintered samples were strongly dependent on the densities of samples. For the samples with density below 4.6 g/$cm^3$, the insulator characteristics were observed, while PTC jump characteristics (R150/R30) were disappeared for the sample with density above 5.05 g/$m^3$. Optimal PTC characteristics were obtained for the sintered samples with density of 5.05 g/$m^3$. The laminated SMD-type PTC thermistor prepared by calcination at $1100^{\circ}C$ for 2h and sintering at $1270^{\circ}C$ for 2h showed the room temperature resistivity of $11{\Omega}{\cdot}cm$ and PTC jump characteristics of $10^2$ order.

• Journal of the Microelectronics and Packaging Society
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• v.2 no.2
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• pp.41-48
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• 1995

본 논문에서는 테이프 케스팅법으로 제조한 BaTiO3 계 쉬트형 PTCR 세라믹스의 적기적물성에 대하여 연구하였다. PTCR의 조성은 몰비로 89.9 BaTiO3-0.1Sb2O3-10 CaTiO3-0.05MnO3였고 케스팅용 슬러리의 유기물질은 결합제로 PVB 가소제로는 DBP 용제 로는 에탄올과 톨류엔 그리고 분산제로는 fish oil을 사용하였다. 케스팅하여 얻어진 그린쉬 트를 13$25^{\circ}C$와 135$0^{\circ}C$에서 1시간 소성하여 얻은 쉬트형 PTCR을 온도에 대한 저항 및 복소 임피던스를 측정하고 미세구조를 SEM으로 관찰하여 칩화를 위한 조건들을 검토하였다.