• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.3
• /
• pp.245-251
• /
• 2000

Dielectric properties, piezoelectric properties and mechanical properties of NiO-doped Pb($(Ni_{1/3}Nb_{2/3})O_3-PbTiO_3-PbZrO_3$ ceramics were investigated. Powders, prepared by columbite precursor method, were cold pressed and sintered at temperature ranging from $1100^{\circ}C$ to $1250^{\circ}C$. Dielectric constant and piezoelectric constant increased with amount of NiO up to 1 mol% and then decreased with further addition of NiO. It seems that NiO acts as a sintering aid at the sintering temperatures of $1150^{\circ}C$. When the samples were sintered at temperature above $1200^{\circ}C$, however, both dielectric constant and electromechanical coupling factor decreased and mechanical quality coefficient increased with addition of NiO. Hardness and fracture toughness of PNN-PT-PZ increased with addition of NiO up to 1 mol%, and then decreased slightly with further addition of NiO. These results showed that dielectric properties, piezoelectric properties and mechanical properties of PNN-PT-PZ system seemed to be closely related with microstructural factors such as grain size, bulk density and the amount of second phase.

• The Korean Journal of Ceramics
• /
• v.7 no.1
• /
• pp.36-40
• /
• 2001

In order to fabricate uncooled IR sensors for pyroelectric applications, multilayered thin films of Pt/PbTiO$_3$/Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si and thermally isolating membrane structures of square-shaped/cantilevers-shaped microstructures were prepared. Cavity was also fabricated via direct silicon wafer bonding and etching technique. Metallic Pt layer was deposited by ion beam sputtering while PbTiO$_3$ thin films were prepared by sol-gel technique. Micromachining technology was used to fabricate microstructured-membrane detectors. In order to avoid a difficulty of etching active layers, silicon-nitride membrane structure was fabricated through the direct bonding and etching of the silicon wafer. Although multilayered thin film deposition and device fabrications were processed independently, these could b integrated to make IR micro-sensor devices.

• Korean Journal of Materials Research
• /
• v.13 no.4
• /
• pp.259-265
• /
• 2003

For the aim of thin microwave absorbers used in mobile telecommunication frequency band, this study proposed a high permittivity dielectrics(λ/4 spacer) coated with ITO thin films of 377 $\Omega$/sq(impedance transformer). High frequency dielectric properties of ferroelectric ceramics, electrical properties of ITO thin films and microwave absorbing properties of ITO/dielectrics were investigated. Ferroelectric materials including $BaTiO_3$(BT), 0.9Pb($Mg_{1}$3/Nb$_{2}$3/)$O_3$-0.1 $PbTiO_3$(PMN-PT), 0.8 Pb (Mg$_{1}$3/$Nb_{2}$3/)$O_3$-0.2 Pb($Zn_{1}$3$_Nb{2}$3/)$O_3$(PMN-PZN) were prepared by ceramic processing for high permittivity dielectrics,. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave frequency range. The microwave absorbance (at 2 ㎓) of BT, 0.9PMN-0.1PT, and 0.8PMN-0.2PZN were found to be 60%(at a thickness of 3.5 mm), 20% (2.5 mm), and 30% (2.5 mm), respectively. By coating the ITO thin films on the ferroelectric substrates with λ/4 thickness, the microwave absorbance is greatly improved. Particularly, when the surface resistance of ITO films is closed of 377 $\Omega$/sq, the reflection loss is reduced to -20 ㏈(99% absorbance). This is attributed to the wave impedance matching controlled by ITO thin films at a given thickness of high permittivity dielectrics of λ/4 (3.5 mm for BT, 2.5 mm for PMN-PT and PMN-PZN at 2 ㎓). It is, therefore, successfully proposed that the ITO/ferroelectric materials with controlled surface resistance and high dielectric constant can be useful as a thin microwave absorbers in mobile telecommunication frequency band.

• Electrical & Electronic Materials
• /
• v.9 no.10
• /
• pp.991-1000
• /
• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• Journal of Powder Materials
• /
• v.26 no.5
• /
• pp.405-409
• /
• 2019

Piezoelectric ceramic specimens with the $Pb(Mg_{1/3}Nb_{2/3})_{0.65}Ti_{0.35}O_3$ (PMN-PT) composition are prepared by the solid state reaction method known as the "columbite precursor" method. Moreover, the effects of the $Li_2O-Bi_2O_3$ additive on the microstructure, crystal structure, and piezoelectric properties of sintered PMN-PT ceramic samples are investigated. The addition of $Li_2O-Bi_2O_3$ lowers the sintering temperature from $1,200^{\circ}C$ to $950^{\circ}C$. Moreover, with the addition of >5 wt.% additive, the crystal structure changes from tetragonal to rhombohedral. Notably, the sample with 3 wt.% additive exhibits excellent piezoelectric properties ($d_{33}=596pC/N$ and Kp = 57%) and a sintered density of $7.92g/cm^3$ after sintering at $950^{\circ}C$. In addition, the sample exhibits a curie temperature of $138.6^{\circ}C$ at 1 kHz. Finally, the compatibility of the sample with a Cu electrode is examined, because the energy-dispersive X-ray spectroscopy data indicate the absence of interdiffusion between Cu and the ceramic material.

• Nuclear Engineering and Technology
• /
• v.48 no.4
• /
• pp.997-1001
• /
• 2016

Conductive ceramics are being developed to replace current Pt anodes in the electrolytic reduction of spent oxide fuels in pyroprocessing. While several conductive ceramics have shown promising electrochemical properties in small-scale experiments, their long-term stabilities have not yet been investigated. In this study, the chemical stability of conductive $La_{0.33}Sr_{0.67}MnO_3$ in $LiCl-Li_2O$ molten salt at $650^{\circ}C$ was investigated to examine its feasibility as an anode material. Dissolution of Sr at the anode surface led to structural collapse, thereby indicating that the lifetime of the $La_{0.33}Sr_{0.67}MnO_3$ anode is limited. The dissolution rate of Sr is likely to be influenced by the local environment around Sr in the perovskite framework.

• Proceedings of the KIEE Conference
• /
• 1995.07c
• /
• pp.1242-1244
• /
• 1995

The dielectric and polarizable properties of $0.9Pb_{1-x}La_x({Mg}_{1/3}Nb_{2/3})O_3-0.1PbTiO_3$ (x=0,1,2,3,4,5) have been investigated. The temperature-dependant electrostictive characteristics of 0.9PMN-0.1PT relaxor ferroelectric system were improved by enhencing the extent of the diffuse phase transition(DPT). This was achieved using PMN-PTceramics by the partial substitution of La at the Pb site. The curie temperature and the maximum dielectric permittivity decreased by substituting La and the electric field-related hysteresis phenomena decreased with increasing La substitution amount.

• Proceedings of the KIEE Conference
• /
• 1992.07b
• /
• pp.753-756
• /
• 1992

The piezoelectric ceramics of PMS-PZT was made in the radial mode disk. As the results, in the application of filter required conditions: that is, higher-values for piezoelectric properties($K_p$, $Q_m$) and lower-values for stabilities of $F_{\tau}$(temp. coefficient, aging rate), 5PMS-51PT-44PZ composition statified well. This composition was made in the dot-ring type. Asthe results, with increasing $n^2$ both $Q_m$ and S had high values, decreasing $n^2$ both $K_p$ and BW had low values when the diameter of sintered bodies were constant. Therefore, curve of filter characteristic have sharped with increasing $n^2$ and BW broadened with decreasing $n^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.289-292
• /
• 1997

BaTiO$_3$thin film capacitor were prepared on Pt(100)/SiO$_2$/Si(100)wafer by RF sputtering technique. Dielectric and electrical characteristics of the thin film capacitor are investigated. The Dielectric constant and loss were about 683 and 5[%], respectively. We found that the leakage current of thin film capacitor is depend on RF power during deposition. Because of increase of activation energy, leakage current inclosed at high RF power and sheet resistivity of the films was decreased. Swithching voltage of thin film capacitor was 4.4[V]

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.6
• /
• pp.550-553
• /
• 2005

[ $Pb(Zr_{0.2}Ti_{0.8})O_3$ ] powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen-printing techniques on Pt/alumina substrates. The structural and dielectric properties were examined as a function of sintering temperature. The particle size distribution of the powder is bimodal with the mean particle size of about $1.2\;{\mu}m$. The average grain size of the PZT thick films sintered above $1000^{\circ}C$ was about $3.1\;{\mu}m$ and the thickness of the specimens was approximately $41\;{\mu}m$. The relative dielectric constant and dielectric loss of the thick films sintered at $1050^{\circ}C$ were 337 and $1.24\%$, respectively.