• Rubber Technology
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• v.13 no.1
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• pp.1-9
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• 2012

Click chemistry had enjoyed a wealthy decade after it was introduced by K.B.Sharpless and his co-worker on 2001. Since there is no optimized method for synthesis of click polymer, therefore, this paper introduced three click reaction methods such as catalyst, non-catalyst and azide-end capping for fluorene-based functional click polymers. The obtained polymers have reasonable molecular weight with narrow PDI. The polymers are thermally stable and almost emitted blue light emission. The synthesized fluorene-based functional click polymers were characterized to compare the effect of click reaction methods on polymer electro-optical properties as well as device performance on quasi-solid-state dye sensitized solar cells (DSSCs) applications. The DSSCs with configuration of $SnO_2:F/TiO_2/N719$ dye/quasi-solid-state electrolyte/Pt devices were fabricated using these click polymers as a solid-state electrolyte components. Among the devices, the catalyzed click polymer composed device exhibited a high power conversion efficiency of 4.62% under AM 1.5G illumination ($100mW/cm^2$).These click polymers are promising materials in device application and $Cu^I$-catalyst 1, 3-dipolar cycloaddition click reaction is an efficient synthetic methodology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.565-568
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• 2001

We have fabricated $Bi_{3.25}La_{0.75}Ti_{3}O_{12}(BLT)$ thin(200nm) films on the $Pt/Ti/SiO_{2}/Si$ substrates using a MOD(Metalorganic decomposition) method with annealing temperature from $550^{\circ}C$ to $750^{\circ}C$. The structural properties of the films examined by x-ray diffraction. The layered-perovskite phase obtained above $600^{\circ}C$. Scanning electron micrographs showed uniform surface composed of rodlike grains. The grain size increased with increasing annealing temperature. The BLT thin films showed little polarization fatigue test up to $3.5{\times}10^{9}$ bipolar cycling at a 5V and 100kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.39-40
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• 2005

Ferroelectric Eu-substituted $Bi_4Ti_3O_{12}$ (BET) thin films with a thickness of 200 nm were deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrate by means of the liquid delivery MOCVD system and annealed at several temperatures in an oxygen atmosphere. At annealing temperature above $600^{\circ}C$, the microstructure of layered perovskite phase was observed. The remanent polarization of these films increased with increase in annealing temperature. The remanent polarization values ($2P_r$) of the BET thin films annealed at $720^{\circ}C$ were $37.71{\mu}C/cm^2$ at an applied voltage of 5 V.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.845-847
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• 1999

(Ba, Sr)$TiO_3$[BST] thin films were fabricated on Pt/$TiO_2/SiO_2$/Si substrate by RF sputtering. The structural and dielectric properties of the BST thin films were investigated with the deposition time. Increasing the deposition time from 20 min. to 60 min., second phases were decreased, and EST (111), (100), (200) peaks were increased. The relative dielectric constant and dielectric loss of the EST thin films with the thickness of 3000$\AA$ were 300 and 0.018, respectively at 1[kHz]. The relative dielectric constants was decreased and dielectric losses was increased as increasing the frequency.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.245-245
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• 2011

$BiFeO_3$ (BFO)박막에 전위금속 Pb와 Co를 각각 치환환 박막을 chemical solution deposition 방법으로 Pt/Ti/SiO2/Si(100) 기판위에 증착하였다. Bi 자리에 Pb와 Co를 20 at.% 치환하였으며, 치환된 $Bi_{0.8}Pb_{0.2}FeO_3$ (BPFO), $Bi_{0.8}Co_{0.2}FeO_3$ (BCFO) 박막의 구조적, 자기적 특성 변화를 BFO 박막과 비교하여 조사하였다. XRD 패턴을 분석한 결과 BPFO, BCFO 박막들은 모두 rhombohedrally distorted perovskite 구조였으며 불순물인 pyrochlore 상이 약하게 관측되었다. 치환이 이루어진 BPFO, BCFO 박막들의 자기 이력곡선은 안정된 포화곡선을 나타냈으며 BFO의 포화값(5 emu/$cm^3$)에 비해 크게 증가된 55 emu/$cm^3$, 35 emu/$cm^3$의 값을 나타냈다. 또한 보자력장(coercive field, Hc)값도 BFO의 500 Oe보다 크게 증가된 1,200 Oe, 800 Oe의 값을 보였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.70-70
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• 2011

차세대 저항 메모리로 활용 가능한 ZnO 박막의 저항 변화 특성을 평가하였다. ZnO 박막은 Pt/Ti/SiO2/Si 기판 위에 스퍼터링 시스템을 이용하여 약 50nm 두께로 증착되었다. 증착된 박막에 전극을 evaporator를 이용하여 패턴닝 함으로써 전극-반도체-전극 구조의 소자를 만들고 전기적 특성을 평가하였다. 비교적 높은 compliance current (이하Icomp)를 설정한 경우 unipolar 저항 변화특성을 나타낸 데 비해 비교적 낮은 Icomp를 설정한 경우 bipolar 저항 변화특성을 나타내었다. 두 서로 다른 저항 변화 특성은 100cycle 이상 안정적으로 재현성 있게 나타났으며 이때의 저항비는 약 $10^3$ 정도를 나타냈다. 본 결과를 바탕으로 필라멘트 이론에 기초한 저항 변화 메커니즘을 설명하는 모델이 제시되었다.

• Journal of the Korean Ceramic Society
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• v.30 no.5
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• pp.389-396
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• 1993

We studied the crystallization behavior of amorphous PbTiO3 thin film grown at 30$0^{\circ}C$ by RF magnetron sputtering on Pt substrate. Crystallization to full perovskite phase was observed after annealing at 475$^{\circ}C$, for 9min, without PbO volatilization. The higher the annealing temperature, the shorter the time required for crystallization. The isothermal kinetic study at 475$^{\circ}C$ showed that the Avrami constant was approximately 4, which implies that the crystallization can be characterized by isotropic 3-dimensional growth with a constant nucleation rate. The TEM study revealed that the crystallized thin film was composed of very fine (20~100nm) grains oriented randomly without any evidence of 90$^{\circ}$domain boundaries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.175-179
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• 1996

Ferroelectric SrBi$_2$Ta$_2$$O_{9}$ thin films were fabricated by tole Sol-Gel method using a spin-on coating with MOD(Metal Organic Dccomposition) solution on Pt/Ti/SiO$_2$/Si(100) substratcs. The films were anncalcd at 80$0^{\circ}C$ for one hour in oxygen atmosphere. The effects of Bi/Ti mole ratios on crystalline orientations, surface morphologies, and subface composition SBT thin films with a Bi/Ta mole ratios from 1.1 to 1.3 were investigated using X-ray Diffractometry (XRD). Atomic Force (AFM), X-Ray Photoelectron Spectroscopy(XPS). Ferroelectric properties of these films were also measured.d.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1236-1238
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• 1997

유전체 PLT(28) ($Pb_{0.72}La_{0.28}Ti_{0.93}O_3$) 박막을 레이저 어블레이션 기법으로 Pt/Ti/$SiO_3$/Si기판을 $500^{\circ}C{\sim}700^{\circ}C$까지 가열한 상태에서 $O_2$분위기에서 증착시켰다. 증착된 박막은 SEM, XRD 등의 구조적 분석을 통하여 $600^{\circ}C$이상에서 증착된 경우, (111)방향으로 우세하게 성장한, 결정성이 양호한 박막임을 확인하였다. 박막의 전기적 특성은, 증착 온도가 $650^{\circ}C$일 때 약 1400정도의 높은 비유전율을 얻었으며, 전하저장밀도는 100[KV/cm]에서 약 9[${\mu}C/cm^2$]이었다.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.177-182
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• 1996

strontium titanate (SrTiO3) thin films deposited on Pt/MgO were prepared by Plasma Enhanced Metal Orgainc Chemical vapor Deposition (Pe-MOCVD). The crystallinity of SrTiO3 thin films increased with increasing depo-sition temperature and SrF2 second phase disappeared at 55$0^{\circ}C$ The films showed a dielectric constant of 177 and a dissipation factor of 0.0195 at 100 kHz. The variation of capacitance of the films with applied voltage was small showing paraelectric properties. The charge storage density and leakage current density were 40fC/${\mu}{\textrm}{m}$2 and 3.49$\times$10-7 A/cm2 at 0.25 MV/cm, respectively.