• Title/Summary/Keyword: PSPICE Circuit Model

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Enhanced PSPICE Circuit Model for Vented-Box Loudspeaker System (PSPICE를 이용한 개선된 벤트박스 스피커 시스템 모델링)

  • Park, Seok-Tae
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.17 no.8
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    • pp.757-765
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    • 2007
  • Enhanced PSPICE circuit model for vented-box loudspeaker system with lumped parameters was proposed to more accurately simulate real vented-box loudspeaker system. Frequency dependent parameters were used to model voice coil inductor. Acoustic pressure response curves and electrical impedance curves were simulated and investigated by PSPICE circuit model according to circuit parameters' variations. Finally, it was used to identify faults detection in woofers manufactured by unskilled persons.

Modeling of Piezoelectric Transformer and CCFL by PSPICE Circuit Analysis (PSPICE 회로해석에 왜한 압전변압기와 CCFL의 모델링)

  • Kim Young-Chun
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.7 no.3
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    • pp.350-357
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    • 2006
  • In this paper, a PSPICE model of piezoelectric transformer and CCFL using an electrical equivalent circuit was presented. The parameters of CCFL for PSPICE were derived by the least square method. The computer simulations were performed and the results are compared on the PSIPCE model of piezoelectric transformer driven by push-pull inverter and CCFL.

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A Study on the PSPICE Modeling of CCFL Drive Circuit Using a Piezoelectric Transformer (압전 트랜스포머를 이용한 CCFL 구동회로의 PSPICE Modeling에 관한 연구)

  • 황락훈;조문택;안익수
    • The Transactions of the Korean Institute of Power Electronics
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    • v.8 no.2
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    • pp.180-191
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    • 2003
  • In this paper, the modelings of PSPICE of the piezoelectric transformer and CCFL drive circuit using an electrical equivalent circuit is proposed. In the CCFL drive circuit modeling the model parameters of the CCFL were derived using the method of least squares because push-pull inverter and loads such as CCFL were also modeled using PSPICE. It is considered that the simulation techniques can be used in the piezoelectric devices such as piezoelectric transformer.

Parameters Estimation for Pseudo Loudspeaker attached to Closed-Box and Enhanced Closed-Box Modeling (밀폐박스 상태의 가상 라우드스피커 매개변수 규명법 및 개선된 밀폐박스 모델링)

  • Park, Seok-Tae
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.17 no.10
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    • pp.983-992
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    • 2007
  • It was proposed to identify Thiele Small Parameters for loudspeaker attached to closed-box using known dynamic mass of moving parts. Also, enhanced PSPICE circuit model for closed-box loudspeaker system was proposed to more accurately simulate real closed-box loudspeaker system. Frequency dependent parameters were used to model voice coil inductor. Acoustic pressure response curves and electrical impedance curves were simulated and investigated by PSPICE circuit model according to compensation filter's parameters. Finally, proposed method is expected to be utilized for identification of pseudo Thiele Small parameters of microspeaker.

Induction motor Modeling and Converter circuit Simulation using Pspice (Pspice를 이용한 유도전동기 모델링과 전력변환회로 시뮬레이션)

  • 서영수;백동현;조문택;이상봉
    • Proceedings of the KIPE Conference
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    • 1997.07a
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    • pp.148-151
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    • 1997
  • Pspice is not offered a library of mechanical factor like DC Motor, Induction Motor which is needed in Power Electronics field. Therefore, Induction Motor was made library by Equibalent circuit in this study. This model is applied in Voltage-Type inverter and is investigated its characteristics. IGBT is tested by two methods of Macro and Micro Modeling as semiconductor. PWM signal is used of pulse signal. Voltage and current, speed was simulated for assurance of model.

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In Memristor Based Differential or Integral Control Circuit, Hysteresis Curve Characteristic Analysis According to Capacitance (멤리스터 기반 미분 및 적분제어 회로에서의 커패시턴스 변화에 따른 히스테리시스 곡선 특성 분석)

  • Choi, Jin-Woong;Mo, Young-Sea;Song, Han-Jung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.10
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    • pp.658-664
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    • 2015
  • This paper presents an electrical feature analysis of hysteresis curves in memristor differential and intergral control circuit. After making macro model of the memristor device, electric characteristics of the model such as time analysis, frequency dependent DC I-V curves were performed by PSPICE simulation. Also, we made a circuit of memristor-capacitor based on nano-wired memristor device and analyzed the simulated PSPICE results. Finally, we proposed a memristor based differential or integral control circuit, analyzed hysteresis curve characteristic in the control circuit.

PSPICE circuit simulation for electrical characteristic analysis of the memristor (멤리스터의 전기적 특성 분석을 위한 PSPICE 회로 해석)

  • Kim, Boo-Kang;Park, Ho-Jong;Park, Yongsu;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.15 no.2
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    • pp.1051-1058
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    • 2014
  • This paper presents a Electrical characteristics of the Memristor device using the PSPICE for circuit analysis. After making macro model of the Memristor device for circuit analysis, electric characteristics of the model such as time analysis, frequency and DC analysis according to the input voltage were performed by PSPICE simulation. Also, we made simple circuits of memristor series and parallel structure and analyzed the simulated SPICE results. Finally, we made a memristor-capacitor (M-C) circuit. charge and discharge characteristics were analyzed. In case of input pulse signal of 250 Hz, the Memristor-capacitor circuit showed delay time of 0.6ms, rising time of 0.58 ms and falling time of 1.6 ms.

A PSPICE Circuit Modeling of Strained AlGaInN Laser Diode Based on the Multilevel Rate Equations

  • Lim, Dong-Wook;Cho, Hyung-Uk;Sung, Hyuk-Kee;Yi, Jong-Chang;Jhon, Young-Min
    • Journal of the Optical Society of Korea
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    • v.13 no.3
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    • pp.386-391
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    • 2009
  • PSPICE circuit parameters of the blue laser diodes grown on wurtzite AlGaInN multiple quantum well structures were extracted directly from the three level rate equations. The relevant optical gain parameters were separately calculated from the self-consistent multiband Hamiltonian. The resulting equivalent circuit model for a blue laser diode was schematically presented, and its modulation characteristics, including the pulse response and the frequency response, have been demonstrated by using a conventional PSPICE.

Switching Characteristics and PSPICE Modeling for MOS Controlled Thyristor (MOS 제어 다이리스터의 특성 해석 및 시뮬레이션을 위한 모델)

  • Lee, Young-Kook;Hyun, Dong-Seok
    • Proceedings of the KIEE Conference
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    • 1994.07a
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    • pp.237-239
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    • 1994
  • The MOS-controlled thyristor(MCT) is a new power semi-conductor device that combines four layers thyristor structure presenting regenerative action and MOS-gate providing controlled turn-on and turn-off. The MCT has very fast switching speed owing to voltage controlled MOS-gate, and very low on-state voltage drop resulting from regenerative action of four layers thyristor structure. In addition, because of a higher dv/dt rating and di/dt rating, gate drive circuit and snubber circuit can be simpler comparing to other power switching devices. So recently much interest and endeavor is being applied to develop the performance and ratings of the MCT. This paper describes the switching characteristic of the MCT for its practical applications and presents a model for PSPICE circuit simulation. The model for PSPICE circuit simulation is compared to the experimental result using MCTV75P60F1 made by Harris co..

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Experimental Study on an Electrical Circuit Model for neuron synapse based Memristor (뉴런 시냅스를 위한 멤리스터의 전기회로 모델의 실험적 연구)

  • Mo, Young-Sea;Song, Han-Jung
    • Journal of the Korean Institute of Intelligent Systems
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    • v.26 no.5
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    • pp.368-374
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    • 2016
  • This paper presents an experimental study on an electrical circuit model of the TiO2-based nano-wired memristor device for neuromophic applications. The electrical circuit equivalent model of the proposed memristor device consists of several electronics components and some passive devices including operational amplifiers, multipliers, resistors and capacitors. In order to verify the proposed design, both of simulation (using PSPICE) as well as hardware implementation were performed for the analysis of the memristor circuit with time waveforms, frequency spectra, I-V curves and power curves. The gained results from the measured data showed a good agreement with the simulation result that confirm the proposed idea.