• 한국광학회지
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• 제6권3호
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• pp.233-238
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• 1995

Low Pressure Chemical Vapor Deposition으로 TEOS, TMPate, $PH_{3}$을 이용하여 Si을 기판으로한 집적광학용 $P_{2}$$O_{5}$ $-SiO_{2}$(PSG)박막을 만들었으며 P첨가제인 TMPate와 P $H_{3}$의 사용에 따른 증착률, 굴절률, 균일도 등의 특성을 조사 및 비교하였다. TMPate에 의한 PSG박막은 증착률이 $55 \AA/min$으로 $PH_{3}$에 의한 PSG박막의 값인 90.angs./min보다 작았으며 상대적으로 TMPate-PSG의 두께 균일도는 2%로 $PH_3-PSG$의 값인 4.5%보다 작아 균일도면에서 훨씬 우수하였다. TMPate-PSG의 굴절률은 파장 633nm에서 1.445-1.468 이였으며 $PH_3-PSG$는 1.459-1.476으로 TMPate-PSG 보다 높은 굴절률 값을 얻을 수 있었다.

• 수면정신생리
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• 제4권2호
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• pp.164-171
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• 1997

Introduction : Periodic limb movement disorder (PLMD) is shown to common in patients with OSA and may become evident or worsened when treated with nasal continuous positive airway pressure (CPAP). Whether this is due to im proved sleep continuity. adverse nocturnal body positioning, uncovered by CPAP, or due to the CPAP stimulus is still debat-ed. We hypothesized that the increase in PLM activity following CPAP is associated with more supine-sleeping tendencies when being treated with CPAP. In the present work, we compared differences in the PLMD index (PLMI) and sleeping position of patients with sleep disordered breathing before and after CPAP treatment. Method : We studied 16 patients (mean age 46 yr, 9M, 7F) with OSA (11 patients) or UARS (5 patients) who either had PLMD on initial polysomnogram (baseline PSG) or on nasal CPAP trial (CPAP PSG). All periodic leg movements were scored on anterior tibialis EMG during sleep according to standard criteria (net duration; 0.5-5.0 seconds, intervals; 4-90 seconds. 4 consecutive movements). Paired t-tests compared PLMD index (PLMI), PLMD-related arousal index (PLMD-ArI), respiratory disturbance index (RDI), and supine sleeping position spent with baseline PSG and CPAP PSG. Results : Ten patients (63%) on baseline PSG and fifteen patients (94%) on CPAP PSG had documented PLMD ($PLMI{\ge}5$) respectively with significant increase on CPAP PSG(p<0.05). Ten patients showed the emergence (6/10 patients) or substantial worsening (4/10 patients) of PLMD during CPAP trial. Mean CPAP pressure was $7.6{\pm}1.8\;cmH_2O$. PLMI tended to increase from baseline PSG to CPAP PSG, and significantly increase when excluding 2 outlier (baseline PSG, $19.0{\pm}25.8/hr$ vs CPAP PSG, $29.9{\pm}12.5/hr$, p<0.1). PLMD-ArI showed no significant change, but a significant decrease was detected when excluding 2 outlier (p<0.1). There was no significant sleeping positional difference (supine vs non-supine) on baseline PSG, but significantly more supine position (supine vs non-supine, p<0.05) on CPAP PSG. There was no significant difference in PLMI during supine-sleeping and nonsupine-sleeping position on both of baseline PSG and CPAP PSG. There was also no significant difference in PLMI during supine-sleeping position between baseline PSG and CPAP PSG. With nasal CPAP, there was a highly significant reduction in the RDI (baseline PSG, $14.1{\pm}21.3/hr$ vs CPAP PSG, $2.7{\pm}3.9/hr$, p<0.05). Conclusion : This preliminary data confirms previous findings that CPAP is a very effective treatment for OSA, and that PLMD is developed or worsened with treatment by CPAP. This data also indicates that supine-sleeping position is more common when being treated with CPAP. However, there was no clear evidence that supine position is the causal factor of increased PLMD with CPAP. It is, however, suggested that the relative movement limitation induced by CPAP treatment could be a contributory factor of PLMD.

• 대한전자공학회논문지
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• 제22권2호
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• pp.90-96
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• 1985

PECVD장비를 사용하여 PSG를 증착하고 막의 유전 및 보호막 특성을 조사하였다. X-선 형광분석으로 PSG내의 인 농도를 분석한 결과 약 8m/o에서 포화되었다. 인 함량에 대한 PSC의 적외선 홉수율, 식각속도 및 시트저항등의 변화도 비교하였다. APCVD와 PECV각에 대한 유전특성, 스텝 커버리지, 크랙저항과 게터링효과를 검토하였다. PECVD산화막은 비중 2.4g/㎤, 굴절율 1.53, 항복전장 11-13MV/cm의 값을 가졌고 크랙저항도 APCVD산화막 보다 우수하였다 2m/o의 인을 포함하는 PECVD PSG의 경우 양호한 스텝 커버리지와 게터링효과를 보였다. 공정변수에 대한 일련의 실험을 통하여 PECVD PSC 공정으로 보다 개선된 특성의 보초막을 얻을 수 있었다.

• 한국진공학회지
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• 제22권3호
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• pp.126-130
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• 2013

PSG/$SiO_2$ 보호막 처리된 Al-1%Si 박막배선 내 sodium (Na)과 수분($H_2O$) 게터링(gettering) 현상을 측정, 분석하였다. PSG/$SiO_2$ 보호막과 Al-1%Si 박막을 상압CVD (APCVD: atmosphere pressure chemical vapor deposition)법과 DC 마그네트론 스퍼터로 각각 증착하였고, 이차이온 질량분석기(SIMS: secondary ion mass spectrometry)를 이용한 깊이분포측정(depth profiling) 분석을 통해 PSG/$SiO_2$ 보호막으로부터 Al-1%Si 박막배선 층까지의 sodium과 수분 등 성분들의 분포를 확인하였다. Sodium과 수분 피크 모두 Al-1%Si 박막배선 내부보다는 막 간 계면에서 강하게 나타났다. PSG와 $SiO_2$ 보호막 계면에서는 sodium 피크는 관찰되었지만 수분 피크는 관찰되지 않았다.

• 한국표면공학회지
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• 제49권5호
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• pp.467-471
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• 2016

In order to investigate the Na gettering, PSG/$SiO_2$/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/$SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/$SiO_2$/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/$SiO_2$ interface and at the $SiO_2$/Al-1%Si interfaces. Na impurity gettering in PSG/$SiO_2$/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be $SiO_2$.

• 한국재료학회지
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• 제1권1호
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• pp.46-53
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• 1991

반도체 공정의 최종 보호막으로 주로 사용되는 PSG (Phosphosilicate class), USG (Undoped silicate glass) 및 SiN 막을 CVD 방식으로 deposition 하여 각 막의 스트레스를 막 두께 또는 대기중 방치시간의 함수로 조사하고 Al 배선의 stress-migration 관점에서 평가했다. 그 결과 PSG 막과 USG 막은 tensile stress를 나타내고 두께증가에 따라 스트레스가 증가하였고, SiN 막은 두께에 관계없이 일정한 compressive stress를 나타내었다. PSG 막은 현저한 스트레스 경시변화를 보여 대기중에 방치시 2일이내로 tensile stress가 compressive stress로 변화되었다. 그 주 원인은 PSG 막의 수분 흡수 때문인것이 FTIR 분석으로 밝혀졌고, $300^{\circ}C$에서 20분간 anneal 처리로 $2.5{\times}{10^9}\;dyne/cm^2$의 스트레스 회복이 가능하였다. PSG 막이 포함된 복합막의 경우, 복합막 stress는 PSG 막의 방치시간에 따라 변한다. 즉, 복합막의 스트레스는 복합막을 구성하고 있는 막들의 두께의 함수이다. 또 SiN 막의 강한 압축응력을 완화시켜주는 PSG, USG 막의 스트레스가 큰 인장응력을 나타낼수록 Al 배선의 stress-migration 에 대한 저항은 커진다.

• 한국표면공학회지
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• 제50권3호
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• pp.219-224
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• 2017

The K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films was investigated using SIMS(secondary ion mass spectrometry) and XPS(X-ray Photoelectron Spectroscopy) analysis. DC magnetron sputter techniques and APCVD(atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and $SiO_2/PSG/SiO_2$ passivations, respectively. Heat treatment was carried out at $400^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of K, Al, Si, P and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze binding energies of Si and P elements in PSG passivation layers. K peaks were observed throughout the $PSG/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the $PSG/SiO_2$ interfaces. K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and P elements in PSG passivation appears to be $SiO_2$ and $P_2O_5$, respectively

• 한국표면공학회지
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• 제48권5호
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• pp.233-237
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• 2015

In order to investigate the potassium (K) gettering, Al-1%Si/$SiO_2$/PSG multilevel thin films were fabricated. Al-1%Si thin films and $SiO_2$/PSG passivations were deposited by using DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition), respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling analysis was used to determine the distribution of K, Al, Si, P, and other elements throughout the $SiO_2$/PSG passivated Al-1%Si thin film interconnections. Potassium peaks were observed throughout the $SiO_2$/PSG passivation layers, and especially the interface gettering at the $SiO_2$/PSG and at the Al-1%Si/$SiO_2$ interfaces was observed. Potassium gettering in Al-1%Si/$SiO_2$/PSG multilevel thin films is considered to be caused by a segregation type of gettering.

• 한국재료학회지
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• 제3권2호
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• pp.166-174
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• 1993

반도체 소자의 표면 보호용으로 사용되는 상압 CVD 방법에 의한 PSG(Phosposilicate glass)막 및 플라즈마 CVD방법에 의한 PE-SiN(Plasma enhanced CVD S${i_2}{N_4}$)막의 항균열 특성을 알루미늄박막이 증착되어 있는 실리콘 기판위에서 조사했다. 45$0^{\circ}C$에서 30분간으 열처리를 반복하면서 균열 발생 유무 및 그 형태를 조사하여 이러한 균열의 생성을 각 막의 막응력과 관련하여 검토하였다. 이들 박막에서의 균열 발생은 하부 조직인 알루미튬배선과의 열팽창계수차에 의한 것임을 알 수 있었다. PSG막 두께가 증가할수록 인장응력이 증가하여 항균열성이 저하되었다. PSG막의 P농도가 증가할수록 막응력은 압축응력쪽으로 이동하였고 균열 발생은 억제되었다. PE-SiN 막도 높은 압축응력을 갖게 함으로써 항균열성을 향상시킬 수 있었다. 본 실험의 결과로부터 반복 열처리시 균열 발생여부에 대한 실험식을 제시하였다.

• 한국멀티미디어학회논문지
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• 제22권12호
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• pp.1491-1499
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• 2019

Insufficient sleep time and bad sleep quality causes many illnesses and it's research became more and more important. The most common method for measuring sleep quality is the polysomnography(PSG). The PSG is a test used to diagnose sleep disorders. The most common PSG data is obtained from the examiner, which attaches several sensors on a body and takes sleep overnight. However, most of the sleep stage classification in PSG are low accuracy of the classification. In this paper, we have studied algorithm for sleep level classification based on machine learning which can replace PSG. EEG, EOG, and EMG channel signals are studied and tested by using CNN algorithm. In order to compensate the performance, a mixed model using both CNN and DNN models is designed and tested for performance.