• Korean Chemical Engineering Research
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• v.46 no.5
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• pp.1002-1007
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• 2008

The purpose of this paper studied the optimal hydrogen production condition of plasma reforming system to operate the PEMFC. Plasma reforming reactor used with Ni catalyst reactor at the same time, So $H_2$ concentration increased. Also the WGS and PrOx reactor were designed to remove CO concentration under 10 ppm, because CO has effect on catalyst poisoning of PEMFC. The maximum $H_2$ production condition in plasma reforming system was S/C ratio 3.2, $CH_4$ flow rate 2.0 L/min, catalytic reactor temperature $700{\pm}5^{\circ}C$ and input power 900 W. At this time, the concentration of produced syngas was $H_2$ 70.2%, CO 7.5%, $CO_2$ 16.2%,$CH_4$ 1.8%. The hydrogen yield, hydrogen selectivity and $CH_4$ conversion rate were 56.8%, 38.1% and 92.2% respectively. The energy efficiency and specific energy requirement were 37.0%, 183.6 kJ/mol. In additional, The experiment of $CO_2/CH_4$ ratio proceeded. Also WGS reactor experiment was proceeding on optimum condition of plasma reactor and the exit concentration were $H_2$ 68%, CO 337 ppm, $CO_2$ 24.0%, $CH_4$ 2.2%, $C_2H_4$ 0.4%, $C_2H_6$ 4.1%. At this time, experiment result of PrOx reactor were $H_2$ 51.9%, CO 0%, $CO_2$ 17.3%.

• Journal of Applied Biological Chemistry
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• v.66
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• pp.272-281
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• 2023

It has been known that Paeoniae Radix (PR) contains monoterpene glycosides showing a variety of biological activities such as anti-spasmodic, anti-inflammatory, anti-viral, neuroprotective, and sedative effects. This study aimed to find the cytotoxic compounds isolated from the dichloromethane (CH₂Cl₂)- and ethyl acetate-soluble fractions of PR. As results, thirteen compounds (1-13) were isolated and the chemical structures were identified. In addition, the human alveolar adenocarcinoma cell line (A549) was treated with isolated compounds to determine the cytotoxic effect via evaluation of cell viability. The reduction of A549 cell viability was shown as following order; gallic acid (8) > (2S)-naringenin (9) > methyl gallate (10)>6'-O-benzoylpaeoniflorin (7) > palmitic acid (3). Especially, 7 did not show the cytotoxicity in the human lung fibroblast cell line (MRC-5). The effect of 7 on the cell viabilities in A549 and MRC-5 is firstly reported in this study. Further study is required to find out the cytotoxic mechanism and the selectivity for the cancer cells of 7 in detail.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.62-62
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• 2003

고밀도 유도결합 플라즈마(high density inductively coupled plasma) 식각은 GaAs 이종접합 양극성 트랜지스터(HBTs)와 고속전자 이동도 트랜지스터(HEMTs)와 같은 GaAs 기반 반도체의 정교한 패턴을 형성하는데 더욱 많이 이용되고 있다 본 연구는 고밀도 플라즈마 소스(source)인 평판형(planar) 고밀도 유도결합 플라즈마 식각장치를 이용하여 $BCl_3$ 와 $BCl_3/Ar$ 가스에 따른 GaAs 식각결과를 비교 분석하였다. 공정변수는 ICP 소스 파워를 0-500W, RIE 척(chuck) 파워를 0-150W, 공정압력을 0-15 mTorr 이었다. 그리고 가스 유량은 20sccm(standard cubic centimeter per minute)으로 고정시킨 상태에서 Ar 첨가 비율에 따른 GaAs의 식각결과를 관찰하였다. 공정 결과는 식각률(etch rate), GaAs 대 PR의 선택도(selectivity), 표면 거칠기(roughness)와 식각후 표면에 남아 있는 잔류 가스등을 분석하였다. 20 $BCl_3$ 플라즈마를 이용한 GaAs 식각률 보다 Ar이 첨가된 (20-x) $BC1_3/x Ar$ 플라즈마의 식각률이 더 우수하다는 것을 알 수 있었다. 식각률 증가는 Ar 가스의 첨가로 인한 GaAs 반도체와 Ar 플라즈마의 충돌로 나타난 결과로 예측된다. $BCl_3$ 와 $BC1_3/Ar$ 플라즈마에 노출된 GaAs 반도체 모두 표면이 평탄하였고 수직 측벽도 또한 우수하였다. 그리고 표면에 잔류하는 성분은 Ga와 As 이외에 $Cl_2$ 계열의 불순물이 거의 발견되지 않아 매우 깨끗함을 확인하였다. 이번 발표에서는 $BCl_3$ 와 $BCl_3/Ar$ 플라즈마를 이용한 GaAs의 건식식각 비교에 대해 상세하게 보고 할 것이다.

• Journal of the Korean Chemical Society
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• v.33 no.3
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• pp.304-308
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• 1989

The spectrophotometric determination of $Lu^{3+},\;Eu^{3+}$ and some other rare earths have been investigated using Methyl Thymol Blue(MTB) as spectrophotometric reagent. Rare earth elements form a stable complex with MTB abount pH 6.5 and the ratio of its complex is 1 to 1. MTB has a absorption maxima at 440nm and rare earth MTB complex has absorption maxima 610nm at pH 6.5, respectively. The absorbance of the rare earth MTB complex is stable in 7 hours after color developing and obey the Beer law in the range of $0{\sim}110{\mu}g/50ml$. The ligand such as phosphate, citrate and EDTA decrease the absorbance of its complex considerably, and this method has a poor selectivity of each rare earth element and the molar absorptivity is $1.2{\sim}2.0{\times}10^4mol^{-1}{\cdot}l{\cdot}cm^{-1}$. In methyl alcohol, ethyl alcohol and acetone medium we did not find out any absorption change of the rare earth MTB complex.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.291-297
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• 1999

The plasma etching of tungsten thin films has been studied with $SF_6$ gas in RIE system. The etch rate of ${\alpha}$-phase W film with $SF_6$ gas plasma has been showed to depend strongly on process parameters ($SF_6$, $SF_6-N_2$ gas). Effect of $N_2$ addition and etching selectivity between W film and photoresist have also been studied in detail. Etching profiles between W film and photoresist were investigated by SEM. The compounds on W surface after $SF_6-N_2$ gas plasma treatment were examined by XPS and the concentration of F ions was detected by OES during plasma on.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Journal of the Korean Society of Radiology
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• v.13 no.2
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• pp.261-270
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• 2019

The separation permeation characteristics of $N_2-O_2$ gas in air at cell membrane model of skin which irradiated by high energy electron(linac 6 MeV) were investigated. The cell membrane model of skin used in this experiment was a sulfonated polydimethyl siloxane(PDMS) non-porous membrane. The pressure range of $N_2$ and $O_2$ gas were appeared from $1kg_f/cm^2$ to $6kg_f/cm^2$. In this experiment(temperature $36.5^{\circ}C$), the permeation change of $N_2$ and $O_2$ gas in non-porous membrane by non-irradiation were found to be $1.19{\times}10^{-4}-2.43{\times}10^{-4}$, $1.72{\times}10^{-4}-2.6{\times}10^{-4}cm^3(STP)/cm^2{\cdot}sec{\cdot}cmHg$, respectively. That of $N_2$ and $O_2$ gas in non-porous membrane by irradiation were found to be $0.19{\times}10^{-4}-0.56{\times}10^{-4}$, $0.41{\times}10^{-4}-0.76{\times}10^{-4}cm^3(STP)/cm^2{\cdot}sec{\cdot}cmHg$, respectively. The irradiated membrane was significantly decreased about 4-10 times than membrane which was not irradiated. And ideal separation factor of $N_2$ and $O_2$ gas by non-irradiation was found to be from 1.32 to 0.42 and that of $N_2$ and $O_2$ gas by irradiation was found to be from 0.237 to 0.125. The irradiated membrane was significantly decreased about 4-5 times than membrane which was not irradiated. When the operation change(cut) and pressure ratio(Pr) by non-irradiation were about 0, One was increased to the oxygen enrichment and the other was decreased to the oxygen enrichment. The irradiated membrane was significantly decreased about 4-19 times than membrane which was not irradiated. As the pressure of $N_2$ and $O_2$ gas was increased, the selectivity was decreased. As separation permeation characteristics of $N_2-O_2$ gas in cell membrane model of skin were abnormal, cell damages were appeared at cell.