• Korean Chemical Engineering Research
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• v.44 no.5
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• pp.498-504
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• 2006

The etch rates of photoresist (PR) and the etch selectivity of $SiO_2$ to PR in a high density $CHF_3$ plasma were investigated at different ion-incident angles and bias voltages. A Faraday cage was employed for the accurate control of ion-incident angles. The ion energy was controlled by changing bias voltages. The etch rate of $SiO_2$ continuously decreased with ion-incident angles but the etch rate of PR remained constant up to the middle angle region and decreased afterwards. The etch rates of $SiO_2$ normalized to those at $0^{\circ}$ incident angle changed with the ion-incident angle following a cosine(${\theta}$) curve. On the other hand, the normalized etch rates of the PR changed showing a drastic over-cosine shape in the middle angle region. The etch selectivity of $SiO_2$ to PR decreased with an increase in the ion-incident angle because the etch yields of PR were enhanced by physical sputtering in the middle angle region compared to the case of $SiO_2$ etching. The etch selectivity of $SiO_2$ to PR decreased with an increase in the bias voltage at nearly all ion-incident angles.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.137-141
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• 2006

Process window for infinite etch selectivity of silicon nitride $(Si_3N_4)$ layers to ArF photoresist (PR) was investigated in dual frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters such as low frequency power $(P_{LF})$, $CH_2F_2$ and $H_2$ flow rate in $CH_2F_2/H_2/Ar$ plasma. It was found that infinite etch selectivities of $Si_3N_4$ layers to the ArF PR on both blanket and patterned wafers can be obtained for certain gas flow conditions. The etch selectivity was increased to the infinite values as the $CH_2F_2$ flow rate increases, while it was decreased from the infinite etch selectivity as the $H_2$ flow rate increased. The preferential chemical reaction of the hydrogen with the carbon in the polymer film and the nitrogen on the $Si_3N_4$ surface leading to the formation of HCN etch by-products results in a thinner steady-state polymer and, in turn, to continuous $Si_3N_4$ etching, due to enhanced $SiF_4$ formation, while the polymer was deposited on the ArF photoresist surface.

• Clean Technology
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• v.23 no.4
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• pp.357-363
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• 2017

In this study, the supercritical carbon dioxide ($scCO_2$)/ n-butyl acetate (n-BA) co-solvent system was employed to remove an unexposed negative photoresist (PR) from the surface of a silicon wafer. In addition, the selectivity of the $scCO_2$/n-BA co-solvent system was confirmed for the unexposed and exposed negative PR. Optimum conditions for removal of the unexposed PR were obtained from various conditions such as pressure, temperature and n-BA ratio. The n-BA was highly soluble in $scCO_2$ without cloud point and phase separation in mostly experimental conditions. However, the $scCO_2$/n-BA co-solvent was phase separated at 100 bar, above $80^{\circ}C$. The unexposed and exposed PR was swelled in $scCO_2$ solvent at all experimental conditions. The complete removal of unexposed PR was achieved from the reaction condition of 160 bar, 10 min, $40^{\circ}C$ and 75 wt% n-BA in $scCO_2$, as measured by ellipsometry. The exposed photoresist showed high stability in the $scCO_2$/n-BA co-solvent system, which indicated that the $scCO_2$/n-BA co-solvent system has high selectivity for the PR removal in photo lithograph process. The $scCO_2$/n-BA co-solvent system not only prevent swelling of exposed PR, but also provide efficient and powful performance to removal unexposed PR.

• Journal of Power Electronics
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• v.13 no.5
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• pp.861-876
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• 2013

Instead of extracting every selected harmonic component, the current reference of selective active power filter (APF) can be also obtained by filtering out the fundamental component from distorted load current for computation efficiency. This type of mixed current reference contains kinds of harmonic components and easily involves noises. In this condition, selective harmonic compensation must be realized by the current controller. With regard that selectivity is the most significant feature of controller, this paper presents specific comparison analysis between two types of resonant controllers: proportional-resonant (PR) controller and vector-resonant (VR) controller. The comparison analysis covers the relations, performances, and stability of both controllers. Analysis results conclude that the poorer selectivity of the PR controller could be relatively improved, but limitations from system stability make the improvement hardly realized. By contrast, the VR controller exhibits excellent selectivity and is more suitable for selective APF with mixed current reference. Experimental results from laboratory prototype validate the reasonability of analysis. And the features of each resonant controller are concluded.

• Bulletin of the Korean Chemical Society
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• v.17 no.10
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• pp.892-899
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• 1996

In order to elucidate the effect of alkoxy substituent in thexylborane and hence establish their usefulness as hydroborating agent, reactions of alkenes and alkynes with thexylalkoxyborane (ThxBHOR; R=Et, i-Pr, i-Bu, sec-Bu, t-Bu, Ph) were investigated in detail. The reagents readily hydroborated alkenes and alkynes of various structural types at 25 ℃ in excellent regioselectivity. The selectivity increases consistently with increasing steric size of alkoxy substituent. Especially, the selectivity achieved by the sec-butoxy derivative is comparable to that previously achieved by thexylhaloborane-methyl sulfide (ThxBHX·SMe2), the most selective hydroborating agent known.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.133-133
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• 2006

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.630-636
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• 2006

Scale down of semiconductor gate pattern will make progress centrally line width into transistor according to the high integration and high density of flash memory semiconductor. Recently, the many researchers are in the process of developing research for using the ONO(oxide-nitride-oxide) technology for the gate pattern give body to line breadth of less 100 nm. Therefore, etch rate and etch profile of the line width detail of less 100 nm affect important factor in a semiconductor process. In case of increasing of the platen power up to 50 W at the ICP etcher, etch rate and PR selectivity showed good result when the platen power of ICP etcher has 100 W. Also, in case of changing of HBr gas flux at the platen power of 100 W, etch rate was decreasing and PR selectivity is increasing. We founded terms that have etch rate 320 nm/min, PR selectivity 3.5:1 and etch slope have vertical in the case of giving the platen power 100 W and HBr gas 35 sccm at the ICP etcher. Also notch was not formed.

• KDI Journal of Economic Policy
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• v.34 no.1
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• pp.135-168
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• 2012

This study analyzes ways to detect protest responses (hereafter, PR zero-bid) in the contingent valuation method (CVM). In order to distinguish PR zero-bids from true zero-bids (non-PR zero bids), this study adopts the concept of the implicit willingness to pay employing the Hicksian compensating surplus and the Taylor's 1st order approximation. When a respondent proposes a zero-bid (i.e., WTP=0) and chooses a PR filtering item to indicate that her implicit WTP is not necessary zero, her response is identified as a PR zero bid. PR filtering items falling into the PR zero bids category include the uncertainty of information, distrust in the government and project achievement, disagreement to project plans, discontent with the fairness of public works and their payment method and animosity against the CVM itself. The empirical analysis shows that PR zero bids take place systematically in particular respondent groups: respondents who have never used similar facilities before nor plans to use the facility provided by the public project, the employed, and low income groups. In conclusion, the study suggests that a CVM questionnaire needs to be designed carefully to minimize problems associated with PR zero bids and the potential risks of having sample selection bias should be concerned.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.213-213
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• 2016

현재 반도체 산업에서는 디바이스의 고 집적화, 고 수율을 목적으로 패턴의 미세화 및 웨이퍼의 대면적화와 같은 이슈가 크게 부각되고 있다. 다중 패터닝(multiple patterning) 기술을 통하여 고 집적 패턴을 구현이 가능해졌으며, 이와 같은 상황에서 각 패턴의 임계치수(critical dimension) 변화는 패턴의 위치 및 품질에 큰 영향을 끼치기 때문에 포토마스크의 임계치수 균일도(critical dimension uniformity, CDU)가 제작 공정에서 주요 파라미터로 인식되고 있다. 반도체 광 리소그래피 공정에서 크롬(Cr) 박막은 사용되는 포토 마스크의 재료로 널리 사용되고 있으며, 이러한 포토마스크는 fused silica, chrome, PR의 박막 층으로 이루어져 있다. 포토마스크의 패턴은 플라즈마 식각 장비를 이용하여 형성하게 되므로, 식각 공정의 플라즈마 균일도를 계측하고 관리 하는 것은 공정 결과물 관리에 필수적이며 전체 반도체 공정 수율에도 큰 영향을 미친다. 흔히, 포토마스크 임계치수는 플라즈마 공정에서의 라디칼 농도 및 식각 선택비에 의해 크게 영향을 받는 것으로 알려져 왔다. 본 연구에서는 Cr 포토마스크 에칭 공정에서의 Cl2/O2 공정 플라즈마에 대해 O2 가스 주입량에 따른 식각 선택비(etch selectivity) 변화를 계측하여 선택비 제어를 통한 Cr 포토마스크 임계치수 균일도 향상을 실험적으로 입증하였다. 연구에서 사용한 플라즈마 계측 방법인 발광분광법(OES)과 optical actinometry의 적합성을 확인하기 위해서 Cl2 가스 주입량에 따른 actinometer 기체(Ar)에 대한 atomic Cl 농도비를 계측하였고, actinometry 이론에 근거하여 linear regression error 1.9%을 보였다. 다음으로, O2 가스 주입비에 따른 Cr 및 PR의 식각률(etch rate)을 계측함으로써 식각 선택비(etch selectivity)의 변화율이 적은 O2 가스 농도 범위(8-14%)를 확인하였고, 이 구간에서 임계치수 균일도가 가장 좋을 것으로 예상할 수 있었다. (그림 1) 또한, spatially resolvable optical emission spectrometer(SROES)를 사용하여 플라즈마 챔버 내부의 O atom 및 Cl radical의 공간 농도 분포를 확인하였다. 포토마스크의 임계치수 균일도(CDU)는 챔버 내부의 식각 선택비의 변화율에 강하게 영향을 받을 것으로 예상하였고, 이를 입증하기 위해 각각 다른 O2 농도 환경에서 포토마스크 임계치수 값을 확인하였다. (표1) O2 11%에서 측정된 임계치수 균일도는 1.3nm, 그 외의 O2 가스 주입량에 대해서는 임계치수 균일도 ~1.7nm의 범위를 보이며, 이는 25% 임계치수 균일도 향상을 의미함을 보인다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.74-74
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• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.