• Journal of Sensor Science and Technology
• /
• v.22 no.6
• /
• pp.410-414
• /
• 2013

As one of the effective methods for researching the objective tinnitus detection, the GPIAS (Gap Pre-pulse Inhibition of Acoustic Startle) measurement has been used to verify the existence of animal tinnitus objectively. The level and pattern of the background sound presented prior to a startle pulse are closely related with the GPIAS results. But the effect of the starting point of the background sound on animal startle responses has not been reported yet. In this paper, we present the implementation of a GPIAS measurement system based on an unconstrained enclosure to avoid animals' excessive constraint stress and deal with the animals' growth. After the performance of our implemented system has been tested through the animal experiment using 4 SD-rats, the effect of starting point of stimulus background sound on the startle response has been studied by the use of our implemented system. Through the results, it is verified that our system can measure the inhibition of animal startle responses due the gap pre-pulse for GPIAS calculation and the background sound starting point does not significantly effect on the startle response and the GPIAS values if the background sound continues for more than 300msec before a gap pre-pulse is presented.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.6 s.360
• /
• pp.8-18
• /
• 2007

In this paper, a 4bit cell way structure of PoRAM and the sensing method to drive this structure are researched. PoRAM has a different operation from existing SRAM and DRAM. The operation is that when certain voltage is applied between top electrode and bottom electrode of PoRAM device we can classify the cell state by measuring cell current which is made by changing resistance of the cell. In the decoder selected by new-addressing method in the cell array, the row decoder is selected "High" and the column decoder is selected "Low" then certain current will flow to the bit-line. Because this current is detect, in order to make large enough current, the voltage sense amplifier is used. In this case, usually, 1-stage differential amplifier using current mirror is used. Furthermore, the detected value at the cell is current, so a diode connected NMOSFET, that is, a device resistor is used at the input port of the differential amplifier to converter current into voltage. Using this differential amplifier, we can classify the cell states, erase mode is "Low" and write mode is "High", by comparing the input value, Vin, that is a product of current value multiplied by resistor value with a reference voltage, Vref.