• Industrial Engineering and Management Systems
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• v.4 no.1
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• pp.75-81
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• 2005

Borror et al. discussed the EWMA(Exponentially Weighted Moving Average) chart to monitor the count of defects which follows the Poisson distribution, referred to the $EWMA_c$ chart, as an alternative Shewhart c chart. In the $EWMA_c$ chart, the Markov chain approach is used to calculate the ARL (Average Run Length). On the other hand, in order to monitor the process fraction defectives P in high-yield processes, Xie et al. presented the CCC(Cumulative Count of Conforming)-r chart of which quality characteristic is the cumulative count of conforming item inspected until observing $r({\geq}2)$ nonconforming items. Furthermore, Ohta and Kusukawa presented the $CS(Confirmation Sample)_{CCC-r}$ chart as an alternative of the CCC-r chart. As a more superior chart in high-yield processes, in this paper we present an $EWMA_{CCC-r}$ chart to detect more sensitively small or moderate shifts in P than the $CS_{CCC-r}$ chart. The proposed $EWMA_{CCC-r}$ chart can be constructed by applying the designing method of the $EWMA_C$ chart to the CCC-r chart. ANOS(Average Number of Observations to Signal) of the proposed chart is compared with that of the $CS_{CCC-r}$ chart through computer simulation. It is demonstrated from numerical examples that the performance of proposed chart is more superior to the $CS_{CCC-r}$ chart.

• Journal of the Korean Society of Safety
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• v.23 no.6
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• pp.171-177
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• 2008

As the risk of traffic accidents caused by mists emerged as a social problem, recently safety facilities to be prepared for mists are being actively installed when designing roads. But in some part, the facilities are being installed imprudently without analyzing the extent of occurrences of mists that would increase the risk of traffic accidents and appropriate countermeasures against the occurrences of mists are not being suggested. For that reason, in this study, first questionnaire surveys were executed on road users in order to draw the factors affecting the traffic accidents caused by mists, a mist traffic accident predicting model was developed and an accident seriousness determining model that can determine accident seriousness was developed. In this way, by extracting major factors affecting mist traffic accidents to grasp risk factors in roads to be caused by mists, safety of roads can be enhanced and traffic accidents in road operations can be decreased. As the affecting factors influencing mist traffic accidents, were extracted sightable distances, durations of mists and whether daytime or nighttime as major factors and the plan to install the facilities for the prevention of mist traffic accidents was suggested to prevent the traffic accidents to be caused by those factors and also the plan to operate roads considering sightable distances was suggested to solve the problem of insufficient sightable distances to be caused by mists was suggested. It is judged that the road safety in the areas where mists occur can be improved through foregoing methods.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.865-868
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• 2006

In this paper, the subthreshold swing has been analyzed for double gate FinFET under channel length of 20nm. The analytical current model has been developed, including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current, and WKB(Wentzel-Framers-Brillouin) approximation to tunneling current. The cutoff current is obtained by simple adding two currents since two current is independent. The subthreshold swings by this model are compared with those by two dimensional simulation and two values are good agreement. Since the tunneling current increases especially under channel length of 10nm, the characteristics of subthreshold swing is degraded. The channel and gate oxide thickness have to be fabricated as thin as possible to decrease this short channel effects and this process has to be developed. The subthreshold swings as a function of channel doping concentrations are obtained.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.869-872
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• 2006

In this paper, the threshold voltage roll-off been analyzed for nano structure double gate FinFET. The analytical current model has been developed , including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current, and WKB(Wentzel- framers-Brillouin) approximation to tunneling current. The threshold voltage roll-offs are obtained by simple adding two currents since two current is independent. The threshold voltage roll-off by this model are compared with those by two dimensional simulation and two values are good agreement. Since the tunneling current increases especially under channel length of 10nm, the threshold voltage roll-off Is very large. The channel and gate oxide thickness have to be fabricated as thin as possible to decrease this short channel effects and this process has to be developed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.156-162
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• 2015

This paper has analyzed how conduction path and electron concentration for the device parameters such as oxide thickness, channel doping, and top and bottom gate voltage influence on subthreshold swing of asymmetric double gate MOSFET. Compared with symmetric and asymmetric double gate MOSFET, asymmetric double gate MOSFET has the advantage that the factors to be able to control the short channel effects increase since top and bottom gate oxide thickness and voltages can be set differently. Therefore the conduction path and electron concentration for top and bottom gate oxide thickness and voltages are investigated, and it is found the optimum conditions that the degradation of subthreshold swing, severe short channel effects, can reduce. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation. As a result, conduction path and electron concentration are greatly changed for device parameters, and subthreshold swing is influenced by conduction path and electron concentration of top and bottom.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.1925-1930
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• 2014

This paper has analyzed the relation of conduction path and subthreshold swing for doping profile in channel of asymmetric double gate(DG) MOSFET. Since the channel size of asymmetric DGMOSFET is greatly small and number of impurity is few, the high doping channel is analyzed. The analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. The conduction path and subthreshold swing are derived from this analytical potential distribution, and those are investigated for variables of doping profile, projected range and standard projected deviation, according to the change of channel length and thickness. As a result, subthreshold swing is reduced when conduction path is approaching to top gate, and that is increased with a decrease of channel length and a increase of channel thickness due to short channel effects.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1196-1202
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• 2013

This paper have analyzed the change of breakdown voltage for channel doping concentration and device parameters of double gate(DG) MOSFET using two dimensional potential model. The low breakdown voltage becomes the obstacle of power device operation, and breakdown voltage decreases seriously by the short channel effects derived from scaled down device in the case of DGMOSFET. The two dimensional analytical potential distribution derived from Poisson's equation have been used to analyze the breakdown voltage for device parameters such as channel length, channel thickness, gate oxide thickness and channel doping concentration. Resultly, we could observe the breakdown voltage has greatly influenced on device dimensional parameters as well as channel doping concentration, especially the shape of Gaussian function used as channel doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.2
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• pp.401-406
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• 2015

The change of subthreshold swing for channel length of asymmetric double gate(DG) MOSFET has been analyzed. The subthreshold swing is the important factor to determine digital chracteristics of transistor and is degraded with reduction of channel. The subthreshold swing for channel length of the DGMOSFET developed to solve this problem is investigated for channel thickness, oxide thickness, top and bottom gate voltage and doping concentration. Especially the subthreshold swing for asymmetric DGMOSFET to be able to be fabricated with different top and bottom gate structure is investigated in detail for bottom gate voltage and bottom oxide thickness. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. As a result, subthreshold swing is sensitively changed according to top and bottom gate voltage, channel doping concentration and channel dimension.

• The Korean Journal of Applied Statistics
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• v.28 no.1
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• pp.33-47
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• 2015

We consider an $M/E_n/1$ queueing model where customers arrive at a facility with a single server according to a Poisson process with customer service times assumed to be independent and identically distributed with Erlang distribution. We concentrate on the overshoot of the workload process in the queue. The overshoot means the excess over a threshold at the moment where the workload process exceeds the threshold. The approximation of the distribution of the overshoot was proposed by Bae et al. (2011); however, but the accuracy of the approximation was unsatisfactory. We derive an advanced approximation using the property of the Erlang distribution. Finally the newly proposed approximation is compared with the results of the previous study.

• Proceedings of the Korea Water Resources Association Conference
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• 2012.05a
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• pp.364-364
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• 2012

수자원 연구의 주요 목적인 효과적인 홍수 및 가뭄관리를 하기 위해서는 그 연구의 기초가 되는 자료를 관측하고 정도(accuracy, 精度)를 향상시키는 연구 또한 매우 중요한 부분이라고 볼 수 있다. 이러한 점에서 수위-유량측정의 경우, 관측자의 숙련도와 계측기 오차에 따라 관측값에 미치는 영향이 큰 특징을 갖고 있어 유량측정의 정확성을 높이고자 진보된 계측기의 개발 및 분석 방법에 관한 연구는 꾸준히 진행되고 있다. 일반적으로 유량을 추정하기 위해서 특정 단면에서의 수위를 측정하여 이를 수위-유량 관계곡선을 통해서 유량으로 환산하고, 수위-유량 관계를 측정한 후 이를 회귀분석 방법으로 내삽 및 외삽을 실시하여 유량을 측정하게 된다. 그러나 수위-유량 관계곡선에서 저수위와 고수위를 하나의 곡선식으로 하게 되는 경우 정도가 낮아지게 되므로 많은 경우에 있어서 저수위, 고수위를 각각의 곡선으로 구하여 사용하고 있다. 문제는 이러한 경우 정량적으로 변곡점을 구하기보다는 경험적으로 저수위와 고수위를 구분하고 있으며, 수위-유량관계를 회귀식에 의해서 추정하게 되므로 이에 대한 불확실성이 발생하게 된다. 따라서 본 연구에서는 불확실성을 정량화시키기 위한 방법으로 Bayesian MCMC 기법을 활용하며 수위-유량 관계곡선식의 매개변수들의 사후분포를 추정하여 매개변수의 최적화 및 불확실성을 평가하였다. 앞서 언급되었듯이 저수위 및 고수위로 분리하여 수위-유량 곡선식을 도출하고 있으나 저수위 및 고수위를 분리하는 기준이 경험적이기 때문에 신뢰성이 저해되는 문제점이 발생한다. 본 연구에서는 수위-유량 곡선식의 매개변수들을 최적화 하는 동시에 Poisson 분포 기반의 변동점 분석이 연동되어 저수위 및 고수위를 분리할 수 있는 Bayesian 기반 통합 수위-유량 곡선 해석 방법을 개발하고자 한다.