• 제목/요약/키워드: PNN-PT-PZ ceramics

검색결과 15건 처리시간 0.017초

PNN-PZ-PT 세라믹스의 미세구조 및 암전특성에 대한 $Y_{2}O_{3}$$Ga_{2}O_{3}$의 첨가효과 (The Effects of $Y_{2}O_{3}$ and $Ga_{2}O_{3}$ Addtives on the Microstructure and Piezoelectric Properties of PNN-PZ-PT Ceramics)

  • 권정호;최해윤;정연학;김일원;송재성;정순종;이재신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.334-337
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    • 2002
  • In this study, the microstructure, dielectric and piezoelectric properties of $0.15Pb(Ni_{1/3}Nb_{2/3})O_3-0.85(PbZr_{0.5}Ti_{0.5})O_3$(0.15PNN-0.85PZT) ceramics having compositions near the morphotropic phase boundary(MPB) was investigated with respect to the variation of $Y_2O_3$ and $Ga_2O_3$ addition amount. The dielectric properties increased and piezoelectric properties decreased with increasing the amount of $Ga_2O_3$. The solubility limit of $Y_2O_3$ is 0.5mol% in this system. The electro-mechanical coupling factor$(K_p)$ and dielectric constant(${\varepsilon}_r$) were 58.6% and 1755 when the amount of $Y_2O_3$ are 0.5mol%.

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Sol-gel법에 의한 $PbZrO_3-PbTiO_3-Pb(Ni_{1/3}Nb_{2/3})O_3$박막의 물리적 특성 (Physical properties of $PbZrO_3-PbTiO_3-Pb(Ni_{1/3}Nb_{2/3})O_3$ thin films by sol-gel method)

  • 임무열;구경완;김성일;유영각
    • E2M - 전기 전자와 첨단 소재
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    • 제9권10호
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    • pp.991-1000
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    • 1996
  • PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

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NiO-Doped Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$-PbTiO$_3$-PbZr$_3$-O세라믹스의 전기 및 기계적 특성에 관한 연구 (Electrical and mechanical properties of NiO doped Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$-PbTiO$_3$-PbZrO$_3$-ceramics)

  • 나은상;김윤호;최성철
    • 한국결정성장학회지
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    • 제10권3호
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    • pp.245-251
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    • 2000
  • Pb($(Ni_{1/3}Nb_{2/3})O_3-PbTiO_3-PbZrO_3$세라믹스에서 NiO첨가에 따른 유전, 압전 및 기계적 특성의 변화를 연구하였다. Columbite precursor법을 사용하여 분말을 제조 후 공기중에서 $1100^{\circ}C$~$1250^{\circ}C$의 온도로 2시간 소결하여 시편을 제조하였다. $1150^{\circ}C$이하 온도에서 소결한 시편에서는 NiO를 1 mol% 첨가시까지 유전상수와 압전상수가 증가하였으나 첨가량이 그 이상 증가함에 따라 감소하였는데 이는 NiO가 소결조제 역할을 한 것으로 보여진다. 그러나 $1200^{\circ}C$ 이상 온도에서 소결한 시편에서는 NiO 첨가량 증가에 따라 유전상수와 전기기계결합계수가 감소하였으며, 기계적품질계수는 증가하였다. 경도 및 파괴인성은 1 mol% 첨가시 최대 값을 보이다가 그 이후 감소하였다. NiO 첨가 PNN-PT-PZ 세라믹스의 전기적 및 기계적 특성은 결정립크기, 소결밀도 및 2차상의 양 등의 미세구조적 요소와 긴밀한 관계가 있음을 보여준다.

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Pb(Zn, Nb)$O_3$-Pb(Ni, Nb))$O_3$-$PbTiO_3$-$PbZrO_3$계 세라믹스의 소결 및 전기적 특성 (Sintering and Electric Prooperties of Pb(Zn, Nb)$O_3$-Pb(Ni, Nb))$O_3$-$PbTiO_3$-$PbZrO_3$ System)

  • 박재성;이기태;남효덕
    • 한국세라믹학회지
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    • 제27권7호
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    • pp.934-942
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    • 1990
  • The quarternary system ceramics 0.5[yPb(Zn1/3Nb2/3)O3-(1-y)Pb(Ni1/3Nb2/3)O3]-0.5[xPbTiO3-(1-x)PbZrO3](PZN-PNN-PT-PZ) was fabricated by the columbite precursor method to obtain a stabilized perovskite structure and by conventional method to evaluate the efficiency of the former methd. Dielectric and piezoelectric properties were investigated and the stability of the perovskite phase was studied as a function of PZN and PT contents and firing temperature. In the samples prepared by the columbite precursor method, the pyrochlore phase, which is detrimental to both the dielectric and piezoelectric properties, was not observed in the absence of PZN, and electric properties were improved even when fabricated at low temperature. By adding PZN, some pyrochlore phase appeared and the morphotropic phase boundary of the samples shifted to more Zr-rich composition. The temperature dependence of piezoelectric constant decreased with the addition of PZN, due to the rising of the Curie point.

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