• 한국전기전자재료학회논문지
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• 제30권7호
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• pp.413-416
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• 2017

We investigated solution-processed indium-yttrium-oxide (IYO) TFTs using apoly (methyl methacrylate) (PMMA) passivation layer. The IYO semiconductor solution was prepared with 0.1 M indium nitrate hydrate and 0.1 M yttrium acetate dehydrate as precursor solutions. The solution-processed IYO TFTs showed good performance: field-effect mobility of $13.13cm^2/Vs$, a threshold voltage of 8.2 V, a subthreshold slope of 0.93 V/dec, and a current on-to-off ratio of $7.2{\times}10^6$. Moreover, the PMMA passivation layers used to protectthe IYO active layer of the TFTs, did so without deteriorating their performance under ambient conditions; their operational stability and electrical properties also improved by decreasing leakage current.

• 한국분말재료학회지
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• 제24권6호
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• pp.489-493
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• 2017

In this study, the surface passivation process for InP-based quantum dots (QDs) is investigated. Surface coating is performed with poly(methylmethacrylate) (PMMA) and thioglycolic acid. The quantum yield (QY) of a PMMA-coated sample slightly increases by approximately 1.3% relative to that of the as-synthesized InP/ZnS QDs. The QYs of the uncoated and PMMA-coated samples drastically decrease after 16 days because of the high defect state density of the InP-based QDs. PMMA does not have a significant effect on the defect passivation. Thioglycolic acid is investigated in this study for the effective surface passivation of InP-based QDs. Surface passivation with thioglycolic acid is more effective than that with the PMMA coating, and the QY increases from 1.7% to 11.3%. ZnS formed on the surface of the InP QDs and S in thioglycolic acid show strong bonding property. Additionally, the QY is further increased up to 21.0% by the photochemical reaction. Electron-hole pairs are formed by light irradiation and lead to strong bonding between the inorganic and thioglycolic acid sulfur. The surface of the InP core QDs, which does not emit light, is passivated by the irradiated light and emits green light after the photochemical reaction.

• 한국분말재료학회지
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• 제24권1호
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• pp.1-5
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• 2017

We have investigated the washing method of as-synthesized CdSe/ZnS core/shell structure quantum dots (QDs) and the effective surface passivation method of the washed QDs using PMMA. The quantum yield (QY%) of as-synthesized QDs decreases with time, from 79.3% to 21.1%, owing to surface reaction with residual organics. The decreased QY% is restored to the QY% of as-synthesized QDs by washing. However, the QY% of washed QDs also decreases with time, owing to the absence of surface passivation layer. On the other hand, the PMMA-treated QDs maintained a relatively higher QY% after washing than that of the washed QDs that were kept in toluene solution for 30 days. Formation of the PMMA coating layer on CdSe/ZnS QD surface is confirmed by HR-TEM and FT-IR. It is found that the PMMA surface coating, when combined with washing, is useful to be applied in the storage of QDs, owing to its long-term stability.

• 한국정보통신학회논문지
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• 제14권9호
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• pp.2065-2070
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• 2010

유기박막 반도체 소자에서 주로 보호막으로 사용되는 PMMA 코팅 박막의 특성에 대하여 FTIR 분석법을 이용하여 조사하였다. 희석된 PMMA 혼합액은 비율에 따라서 $SiO_2$ 박막의 표면을 친수성, 소수성 혹은 하이브리드 특성으로 변화시켰다. FTIR 분석에 의하여 탄소의 함량이 적은 샘플 7에서 화학적인 변화가 크게 일어나는 것을 확인하였다. 전자를 많이 포함한 소량의 탄소가 $SiO_2$ 박막의 분극성을 감소시키고 박막의 표면에너지를 감소시켜서 화학적으로 안정된 박막의 표면을 형성하여 누설전류가 감소되었다. FTIR 분석은 유기화합물 박막에서 일어나는 화학적 변화에 대하여 미세한 부분까지 측정할 수 있는 척도로서 유용한 분석 방법임을 확인하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.189-192
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• 2001

We have studied fabrication processes that form asymmetric $\Gamma$-gate with a 0.1${\mu}{\textrm}{m}$ gate length in MMIC's(Monolithic Microwave Integrated Circuits). Asymmetric $\Gamma$-gate was fabricated using mixture of PMMA and MCB. Thus pseudomorphic high electron mobility transistor (PHEMT's) with 0.1${\mu}{\textrm}{m}$ gate length was fabricated via several steps such as mesa isolation, metalization, recess, passivation. PHEMT's has the -1.75 V of pinch-off voltage (Vp), 63 mA of drain saturation current(Idss and 363.6 mS/mm of maximum transconductance (Gm) in DC characteristics and current gain cut-off frequency of 106 GHz and maximum frequency of oscillation of 160 GHz in RF characteristics.