• 소성∙가공
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• 제13권1호
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• pp.59-64
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• 2004

Nano-scratch tests were performed on PMMA thin films spin-coated on a Si substrate using an atomic force microscopy (AFM) with loads ranging form 10nN to 100nN. At low loads, a ridge pattern was formed on the PMMA thin film surface. No wear particles were observed during the pattern-forming mild wear. At high loads, severe wear by plowing occurred, accompanied by wear particles. The film with the highest hardness showed the highest wear resistance. Friction force generated during the scratching was measured, which was closely related with surface deformation of the film. A simple empirical equation to deduce scratch hardness of the film from a linear fixed-distance scratch test was proposed, and scratching-speed dependency of the scratch hardness was displayed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.29-32
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• 2005

Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• 마이크로전자및패키징학회지
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• 제12권2호
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• pp.181-186
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• 2005

Polystyrene(PS)과 poly(methyl methacrylate)(PMMA)에 대하여 동일한 계면 특성을 갖는 3-(p-methoxyphenyl)propyltrichlorosilane(MPTS)의 자기조립 단분자막(self-assembled monolayer, SAM) 을 실리콘 웨이퍼 표면에 형성시켜 표면 특성을 개질하였다. 개질된 실리콘 웨이퍼에 PMMA 또는 PS가 원통형 나노구조를 형성하는 PS-b-PMMA 블록공중합체 박막을 코팅하여 원통형 나노구조가 실리콘 웨이퍼 표면에 대하여 수직 배향된 박막을 제조하였다. 수직 원통형 나노구조를 갖는 박막에 자외선 조사와 세척을 통하여 PMMA 블록을 선택적으로 제거하여 수직 나노기공 필름과 수직 나노막대 배열을 제조하였다. 제조된 나노기공 필름은 나노리소그래피 마스크로 사용이 가능하다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1081-1084
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• 2003

Structural morphology, annealing behavior and dielectric properties of polyaniline-emeraldine base (Pani-EB) and poly methyl methacrylate (PMMA) thin films prepared by spin coating technique have been studied. MIM and MISM structures were used to investigate annealing and dielectric behavior. The XRD and AFM spectrum of as grown and annealed thin films indicates the amorphous nature. The observed amorphous phase, low loss, dielectric behavior and thermal stability even at high temperatures implies the feasibility of utilizing PMMA and Pani-EB thin films as gate dielectric insulator layer in organic thin film transistors which can find application in flat panel display.

• ETRI Journal
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• 제18권3호
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• pp.195-206
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• 1996

Molecular conformations of stereoregular poly(methyl methacrylate) (PMMA) monolayers have been investigated by scanning probe microscopes. Isotactic and syndiotactic PMMAs were found to have right and left hand helical structures, respectively. On the contrary atactic PMMA showed rather random arrangement of the chains. It has been demonstrated that the PMMA Langmuir-Blodgett (LB) films can be utilized to form nanoscale patterns down to 50 nm and to forma geodesic lens. It has also been manifested that the quantum efficiency of a polymer electroluminescent device can be significantly enhanced by inserting the PMMA LB films between the emitting layer and the cathode. All the applications utilize the unique characteristics of the LB films to form thin and uniform films in the molecular level.

• 한국결정성장학회지
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• 제19권6호
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• pp.305-310
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• 2009

PMMA 입자의 표면에 양전하를 갖는 전해질 폴리머 PDDA와 음전하를 갖는TALH를 사용하여 $TiO_2$ 박막을 LBL 법에 의해 성공적으로 제조하였다. 수정진동자의 측정을 통해 TALH의 용액의 pH가 감소됨에 따라 TALH의 적층량이 늘어나고 PMMA의 입자 표면에 코팅된 (PDDA/TALH) 박막의 두께가 증가됨을 확인하였다. (PDDA/TALH)n의 순서에 의해 코팅된 PMMA 입자들은 bilayer 수의 변화에 따라 다양한 색 변화를 보여주었다. (PDDA/TALH) 박막의 bilayer 수(n)가 10과 20 일 경우에 $a^*$와 $b^*$의 값은 막이 코팅되지 않은 PMMA의 값보다 감소하였고 색 변화는 $a^*$, $b^*$ 색도도에서 각각 green과 blue 방향으로 이동하였다. 이후 n의 수가 30, 40으로 증가됨에 따라 $a^*$와 $b^*$의 값은 증가하였고 색의 변화는 red와 yellow 방향으로 각각 이동하였다. 최종적으로 $(PDDA/TALH)_{50}$ 박막이 코팅된 PMMA 입자들은 박막이 코팅되지 않은 PMMA 입자들과 거의 비슷한 $a^*$와 $b^*$의 값을 보여주었다.

• 한국전자통신학회논문지
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• 제6권5호
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• pp.697-702
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• 2011

본 논문에서는 유기박막트랜지스터용 절연막에 활용코자 플라즈마중합방법을 이용하여 PMMA 절연막을 제작하였다. 기판의 바이어스인가 및 증착중 압력변화에 따른 전기적특성을 파악한 결과, 플라즈마중합법에 의한 MMA절연막의 증착조건 RF100[W], Ar20[sccm], 5[mtorr], RF bias 20[W] 에서 3.4의 유전율, 8.6[nm/min]의 높은 증착율 및 높은 절연특성을 얻을수 있다. 이처럼 얻어진 플라즈마 중합막은 유기트랜지스터 및 유기메모리의 절연막으로 충분히 활용가능함을 알 수 있다.

• Journal of Electrical Engineering and Technology
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• 제4권1호
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• pp.118-122
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• 2009

Organic thin film transistors with a pentacene active layer and various polymer gate insulators were fabricated and their performances were investigated. Characteristics of pentacene thin film transistors on different polymer substrates were investigated using an atomic force microscope (AFM) and x-ray diffraction (XRD). The pentacene thin films were deposited by thermal evaporation on the gate insulators of various polymers. Hexamethyldisilazane (HMDS), polyvinyl acetate (PVA) and polymethyl methacrylate (PMMA) were fabricated as the gate insulator where a pentacene layer was deposited at 40, 55, 70, 85, 100 oC. Pentacene thin films on PMMA showed the largest grain size and least trap concentration. In addition, pentacene TFTs of top-contact geometry are compared with PMMA and $SiO_2$ as gate insulators, respectively. We also fabricated pentacene TFT with Poly (3, 4-ethylenedioxythiophene)-Polysturene Sulfonate (PEDOT:PSS) electrode by inkjet printing method. The physical and electrical characteristics of each gate insulator were tested and analyzed by AFM and I-V measurement. It was found that the performance of TFT was mainly determined by morphology of pentacene rather than the physical or chemical structure of the polymer gate insulator

• Journal of Ceramic Processing Research
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• 제19권6호
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• pp.525-529
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• 2018

The antireflective (AR) coated poly methyl methacrylate (PMMA) substrate was deposited by atomic layer deposition (ALD) on a self-assembled monolayer (SAM) to improve hydrophobicity and mechano-chemical properties of organic thin films. The water contact angles (WCA) were tested to characterize the surface wettability of SAM octadecyltrichlorosilane (OTS) films. Results showed that a contact angle of $105.9^{\circ}$ was obtained for the SAM films with an annealing process, and the highest WCA of $120^{\circ}$ was achieved for the films prepared by the SAM and ALD multi-process. The surface morphology of the SAM films with different assembly times and varying number of ALD cycles was obtained by atomic force microscopy (AFM). The maximum light transmittance for the SAM films on the PMMA substrate reached 99.9% at a wavelength of 450 nm. It was found that the SAM surfaces were not affected at all by the ALD process.

• 폴리머
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• 제36권4호
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• pp.507-512
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• 2012

순수 PMMA와 methacryl-polyhedral oligomeric silsesquioxane(Ma-POSS)를 5 wt% 첨가한 PMMA를 박막(~650 nm)과 초박막(~50 nm)으로 제조하였으며, 유리전이온도($T_g$)와 등온 물리적 시효에 미치는 박막의 두께에 미치는 POSS의 첨가 효과를 시차주사열량계(DSC)를 이용하여 조사하였다. 초박막화와 Ma-POSS의 첨가로 인해 $T_g$ 감소가 관찰되었다. 또한 등온 물리적 시효에 의한 엔탈피 완화값(${\Delta}H_{Relax}$)도 초박막화 Ma-POSS를 첨가하였을 때 감소하였다. 시효시간에 따른 ${\Delta}H_{Relax}$ 데이터에 KWW(Kohlrausch-Williams-Watts)식을 적용하여 최대 엔탈피(${\Delta}H_{\infty}$), 이완시간(${\tau}$) 그리고 이완시간의 분포상수(${\beta}$)를 결정하였으며 이를 비교 분석하였다.