• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.423-429
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• 1997

We fabricated PLT thin films on ITO substrate for flat pannel display and investigated the characteristics, then we applicated to electroluminescent device and investigated application possibility. When we fabricated PLT thin films with substrate temperature of $500^{\circ}C$, and pressure of 30 mTorr, the relative deielectric constant and breakdown electricfield of PLT thin films were 120 and 3.2MV/cm. The electric resistivity was $2.0{\times}10^{12}{\Omega}{\cdot}cm$. PLT thin films had polycrystal structure of perovskite and pyrochlore at the higher substrate temperature than $450^{\circ}C$, and had good crystallinity at higher pressure. To use PLT insulator film and ZnS:Mn phosphor, we fabricated thin film electroluminescent device of ITO/PLT/ZnS:Mn/PLT/Al structure. At the result, threshold voltage was $35.2V_{rms}$ and brightness was $2400cd/m^{2}$ at $50V_{rms}$ and 1kHz. Maximum luminescence efficiency was 0.811m/W.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.191-194
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• 2004

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) 박막을 $Pt(111)/Ti/SiO_2/Si$ 기판위에 증착되었고, 수소 후열처리 후의 특성변화를 연구하였다. 동시에 10 nm의 $(Pb_{0.72}La_{0.28})Ti_{0.94}O_3$ (PLT) buffer를 사용한 PZT 박막의 수소 후열처리 효과를 관찰하였다. PZT 박막의 경우, 수소 후열처리 전과 후에 강유전 특성이 현저하게 감소한 반면, PLT buffer가 사용된 PZT 박막의 경우, 강유전 특성에 거의 변화가 없었다. 이는 PLT buffer를 사용함으로써 PZT 박막의 배향성이 향상되고, 이에 따라 forming gas에 의한 수소원자가 박막 내로의 침투가 어렵게 된다. 따라서 수소원자에 대한 PZT 박막의 열화되는 현상이 buffer를 사용하는 경우, 거의 나타나지 않게 된다.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.90-95
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• 2000

The substrate for pyroelectric IR sensor which has orientation similar to MgO single crystal was fabricated by depositing the MgO thin film on $Si_3N_4/SiO_2/Si_3N_4$/Si. The MgO thin film was deposited by RF magnetron sputtering. The c-axis orientation of PLT thin film deposited on Pt/MgO(100)/$Si_3N_4/SiO_2/Si_3N_4$/Si substrate was investigated. The MgO thin film deposited at $500^{\circ}C$ at a gas pressure of 30 mTorr with RF power of 160 W exhibited a good a-axis orientation. The PLT thin films deposited on these substrates also exhibited c-axis orientation similar to the PLT thin films deposited on MgO single crystal substrate.

• Korean Journal of Materials Research
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• v.6 no.8
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• pp.825-832
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• 1996

적외선 센서의 재료로 활용되고 있는 PLT박막 (두께:8000$\AA$-9000$\AA$)을 Pt/Ti/SiO2/Si와 Pt/M\ulcorner의 하부 구조상에 50$0^{\circ}C$, 55$0^{\circ}C$ 및 $600^{\circ}C$에서 스퍼터링 증착하여 결정성 및 전기적 특성을 조사하였다. $600^{\circ}C$로 in-situ 성장된 PLT박막은 Si기판을 이용한 경우 randomly oriented perovskite 결정구조를 나타내었으며, Pt/MgO 구조위에서는 c-축(00ι)방향으로 배향 성장되었다. $600^{\circ}C$에서 in-situ 성장된 PLT박막의 비유전상수($\varepsilon$r)와 유전정접(tan $\delta$)을 10kHz-100kHz의 주파수에서 측정한 결과 Pt/Ti/SiO2/Si 구조상에 증착된 박막은$\varepsilon$r=90과 tan $\delta$=0.02의 값을 Pt/MgO 구조상에 증착된 박막은 $\varepsilon$e=35와 tan$\delta$=0.01의 값을 나타내었다. 잔류분극량(2Pr)과 초전계수(${\gamma}$)는 상온부근에서 Si 기판을 이용한 경우 각각 0.6$\mu$C/$\textrm{cm}^2$.。C과 0.5x10-8C/$\textrm{cm}^2$.。C정도로 매우 작게 나타났으나 PLT/Pt/MgO 구조에서는 2Pr=5$\mu$C/$\textrm{cm}^2$, r=4x10-8C/$\textrm{cm}^2$.。C로 비교적 양호한 초전박막의 전기적 특성을 나타내었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.76-76
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• 1995

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.47.1-47
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.108-108
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• 1994

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.37-42
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• 1995

The PLT thin films on MgO substrate have been fabricated by RF magnetron sputtering and the dependence of properties on fabrication conditions have been studied. The PbO-rich target was used and the optimum fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, $Ar/O_{2}$ ratio, and rf power was $640^{\circ}C$, 10 mTorr, 10:1, and $1.7\;W/cm^{2}$, repectively. In these conditions, the PLT thin film showed the deposition rate of $62.5\;{\AA}/min$, the Pb/Ti ratio of 1/2, and the dielectric constant of 200. The PLT thin film showed good c-axis orientation and crystalinity according to XRD and SEM analysis.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.103-110
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• 1998

Pyroelectric infrared detectors based on La-modified $PbTiO_{3}$ (PLT) thin films have been fabricated by RF magnetron sputtering and rnicrornachining technology. The detectors form $Pb_{l-x}La_{x}Ti_{1-x/4}O_{3}$ (x=0.05) thin film ferroelectric capacitors epitaxially grown by RF magnetron sputtering on Pt/MgO (100) substrate. The sputtered PLT thin film exhibits highly c-axis oriented crystal structure that no poling treatment for sensing applications is required. This is an essential factor to increase the yield for realization of an infrared image sensor. Micromachining technology is used to lower the thermal mass of the detector by giving maximum sensor efficiency. Polymide is coated on top of the sensing elements to support the fragile structure and the backside of the MgO substrate is selectively etched to reduce the heat loss. The sensing element exhibited a very high detectivity D* of $8.5{\times}10^{8}cm{\cdot}\sqrt{Hz}/W$ at room temperature and it is about 100 times higher than the case of micromachining technology is not used. A sensing system that detects the position as well as the existence of a human body is realized using the array sensor.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.10
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• pp.35-42
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• 2002

Modulation frequency dependences of the pyroelectric properties of PLT (P $b_{1-x}$ L $a_{x}$ $Ti_{1-x}$ 4/ $O_3$) thin films with La concentrations of 5, 10 and 15㏖% have been investigated by using the dynamic method. The PLT thin film with 10㏖% of the La concentration (PLT(10) thin film) shows the most excellent pyroelectric properties among the films. For PLT(10) thin film, the pyroelectric coefficient shows the maximum value of 6.6$\times$10$^{-9}$ C/$\textrm{cm}^2$ㆍK without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03$\times$10$^{-11}$ Cㆍcm/J and 1.46$\times$10$^{-9}$ Cㆍcm/J, respectively. Voltage responsivity corresponding to the pyroelectric voltage is almost constant at low modulation frequency and decreases in proportional to frequency at high modulation frequency. Voltage responsivity is 5.15 V/W at 8Hz. Noise equivalent power (NEP) and specific detectivity ( $D^{*}$) of the PLT(10) thin film are 9.93$\times$10$^{-8}$ W/H $z^{1}$2/ and 1.81$\times$10$^{6}$ cmH $z^{1}$2/W at the frequency of 100Hz, respectively. The results indicate that PLT(10) thin film is very suitable for pyroelectric IR sensors.s.s.