• Title/Summary/Keyword: PLD process

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Au Catalyst Free and Effect of Ga-doped ZnO Seed Layer on Structural Properties of ZnO Nanowire Arrays

  • Yer, In-Hyung;Roh, Ji-Hyoung;Shin, Ju-Hong;Park, Jae-Ho;Jo, Seul-Ki;Park, On-Jeon;Moon, Byung-Moo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.354-354
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    • 2012
  • In this study, we report the vertically aligned ZnO nanowires by using different type of Ga-doped ZnO (GZO) thin films as seed layers to investigate how the underlying GZO film micro structure affects the distribution of ZnO nanowires. Arrays of highly ordered ZnO nanowires have been synthesized on GZO thin film seed layer prepared on p-Si substrates ($7-13{\Omega}cm$) with utilize of a pulsed laser deposition (PLD). With the vapor-liquid-solid (VLS) growth process, the ZnO nanowire synthesis carries out no metal catalyst and is cost-effective; furthermore, The GZO seed layer facilitates the uniform growth of well-aligned ZnO nanowires. The influence of the growth temperature and various thickness of GZO seed layer have been analyzed. Crystallinity of grown seed layer was studied by X-Ray diffraction (XRD); diameter and morphology of ZnO nanowires on seed layer were investigated by field emission scanning electron microscopy (FE-SEM). Our results suggest that the GZO seed layer with high c-axis orientation, good crystallinity, and less lattice mismatch is key parameters to optimize the growth of well-aligned ZnO nanowire arrays.

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전사적 PL 대응시스템의 핵심요인이 기업 성과에 미치는 영향 (Effects of Essential Companywide Components of PL Response System on Company's PL Performance)

  • 서준혁;배성민
    • 산업경영시스템학회지
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    • 제40권2호
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    • pp.22-30
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    • 2017
  • PL (Product Liability) refers to the legal responsibility of a manufacturer or seller for bodily injuries or property losses caused by product defects. Therefore, it is important for companies to construct a product liability response system that strategically manage and effectively adapt to product liability. A PL response system refers to companywide operations of PL prevention (PLP) measures, product safety (PS) measures, and PL defense (PLD) measures appropriate for a company's scale and environment. To establish an enterprise product liability response system, each essential component of corporations should be systematically operated and maintained considering the scale and characteristics of the corporations. Essential components of PL response system is Strategy, Organization, Training, Technology, Investment, and Awareness. Role of essential components is that companies need specific strategies to secure product safety and protect customers from product defects, and appropriate organizations must be composed for effective operation of such strategies. The objective of this paper seeks to examine the relationships among the essential components of the product liability response system and PL performance. PL performance consists of positive performance and negative performance. In particular, positive performance include increased efforts in product or process innovation such as strengthening research and development (R&D) to produce safer products without defects. In order to carry out this research we obtained 98 questionnaire of manufacturing company. A summary of the analyses is as follows: First, the awareness and technology among essential components affect significantly to the positive performance. Second, the awareness and strategy among essential components negative affect to the negative performance.

위성통신용 전력제어 고출력증폭기의 구현 및 성능평가에 관한 연구 (A Study on Implementation and Performance of the Power Control High Power Amplifier for Satellite Mobile Communication System)

  • 전중성;김동일;배정철
    • 한국정보통신학회논문지
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    • 제4권1호
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    • pp.77-88
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    • 2000
  • 본 논문에서는 INMARSAT-B형 송신기에 사용되는 L-BAND(1626.5-1646.5 MHz)용 3단 가변이득 전력증폭기를 연구 개발하였다. 3단 가변이득 전력증폭기는 구동증폭단과 전력증폭단에 의해 고출력 모드일 때 +42 dBm, 중간출력 모드일 때는 +38 dBm, 저출력 모드일 때는 +34 dBm의 전력으로 증폭되며, 각각에 대해 상한 +1 dBm과 하한 2 dBm의 오차를 허용한다. 제작의 간편성 때문에 전체 3단 가변이득 전력증폭기를 크게 구동증폭단과 전력증폭단 두 부분으로 나누어 구현하였으며, 전력증폭부를 구동하기 위한 구동단은 HP사의 MGA-64135와 Motorola사의 MRF-6401을 사용하였으며, 전력증폭단은 ERICSSON사의 PTE-10114와 PTF-10021을 사용하여 RP부, 온도보상회로, 출력 조절회로 및 출력 검출회로를 함께 집적화 하였다. 이득조절은 디지털 감쇠기를 사용하였으며, 출력신호의 세기를 검출하기 위하여 20 dB 방향성 결합기를 이용하였다. 제작된 3단 가변이득 전력증폭기는 20 MHz대역폭 내에서 소신호 이득이 41.6 dB, 37.6 dB, 33.2 dB 를 얻었으며, 입출력 정재파비는 1.3:1 이하, 12 dBm의 PldB, PldB 출력레벨에서 3 dB Back off 시켰을 때 36.5 dBc의 IM3를 얻었다. 1636.5 MHz 주파수에 대해 출력전력은 43 dBm으로서 설계시 목표로 했던 최대 출력전력 20 Watt를 얻었다.

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L-band 위성통신 시스템을 위한 극소형 25 Watt 고출력증폭기에 관한 연구 (A Study on the Ultra Small Size 25 Watt High Power Amplifier for Satellite Mobile Communications System at L-Band)

  • 전중성;예병덕;김동일
    • 한국항해항만학회지
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    • 제26권1호
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    • pp.22-27
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    • 2002
  • 본 논문에서는 hybrid 기법을 이용하여 INMARSAT 위성의 상향 주파수인 L-HAND(1.6265∼1.6465 GHz)에서 동작하는 위성단말기용 25 Watt C급 고출력증폭기를 설계 ·제작하였다. 제작의 간편성을 위해서 전력증폭기를 크게 구동증폭단과 전력증폭단으로 나누어 구현하였으며, 전력증폭단을 구동하기 위한 구동단은 Motorola사의 MRF-640을 사용하여 2단으로 구성하였고, 전력증폭단은 MRF-16006과 MRF-16730을 사용하였다. 또 각 부에 직류 전원을 공급하기 위해 바이어스 회로부를 같은 하우징 내에 장착하여 무게 및 부피를 최소화하였다. 제작된 고출력증폭기는 20 MHz 대역폭 내에서 이득이 30 dB 이상, 입 ·출력 정재파비는 1.7 이하의 특성을 가졌다. 1.635 GHz 주파수에 대해 1 dB 압축점의 출력전력은 44 dBm 으로서 설계시 목표로 했던 출력전력 25 Watt를 상회하였다. 본 논문에서 제시한 SSPA(Solid State Power Amplifier) 제작 기법은 각종 Radar 및 SCPC(Signal Channel Per Carrier)용 전력증폭기 설계 및 제작에도 적용할 수 있다.

동시증발법을 이용한 SmBCO/IBAD-MgO 박막 장선재 제조 (Fabrication of long SmBCO coated conductor on IBAD-MgO template using co-evaporation method)

  • 하홍수;김호섭;고락길;유권국;양주생;김호겸;정승욱;이정훈;이남진;김태형;송규정;하동우;오상수;염도준;박찬;유상임;문승현;주진호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.241-241
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    • 2007
  • We fabricated SmBCO coated conductors(CCs) on IBAD-MgO templates using co-evaporation method. IBAD-MgO templates consist of PLD-LMO/epi-MgO/IBAD-MgO/Ni-alloy and showed good in-plane texture of below FWHM 7 degree. Evaporation rates of Sm, Ba, and Cu were precisely controlled to get the optimum composition ratio after deposition process. To optimize the oxygen partial pressure of reaction region, wide range of the partial pressure was investigated from 1 mTorr to 15 mTorr. By reducing the oxygen partial pressure to 5mTorr, (103)grains in SmBCO layer have been increased. On the other hand, there were only (001)grains in SmBCO layer deposited at 15 mTorr $O_2$. Deposition temperature was also investigated from $600^{\circ}C\;to\;800^{\circ}C$ to make high Ic SmBCO CCs. SmBCO on IBAD MgO template showed that the Ic increased gradually at higher growth temperature to $800^{\circ}C$, which the highest Jc and Ic is $2.6\;MA/cm^2$ and 500 A/cm-w., respectively.

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