• Proceedings of the KIEE Conference
• /
• 2004.07c
• /
• pp.2079-2082
• /
• 2004

This paper study on OLEDs(Organic Light Emitting Diodes) panel using PLD(Pulsed Laser Deposition) methode. Deposition of organic was used Q-stitched Nd/YAG laser in 355 nm and reduced organic pellet for PLD method. Organic morphology was measured AFM(Atomic Forced Microscope) and emitting efficiency was measured luminance meter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.04a
• /
• pp.125-128
• /
• 2000

ZnO thin films on silicon substrates have been deposited by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the effect of oxygen post-annealing treatment on the property of ZnO thin films, deposited film has been annealed at the substrate temperature of $440^{\circ}C$. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been characterized be improved which results in higher UV emission intensity of photoluminescence.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.15-16
• /
• 2008

We have grown N-doped ZnO thin films on sapphire substrate by employing dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound exciton peak ($A^0X$) that indicated the successful p-type doping of ZnO with N.

• Proceedings of the IEEK Conference
• /
• 1999.11a
• /
• pp.947-950
• /
• 1999

The PLD design of new scheme LCD driver circuit is described in this paper. A new scheme LCD driver circuit doesn't used microprocessor for the convenience of users. A new scheme LCD driver circuit consists of 4 main parts, that is, a serial/parallel communication control block part, a LCD controller part, a LCD driver part and a RAM/ROM control block part. The validity and efficiency of the proposed LCD driver circuit have been verified by simulation and by ALTERA EPM7192SQC160-15 PLD implementation in VHDL. After comparing this LCD driver circuit to specify it was verified that the developed LCD driver circuit showed has good performances, such as low cost, convenience of users.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1264-1265
• /
• 2008

PLD 방법으로 undoped ZnO박막을 성장 온도별로 성장하여 박막의 광학적 특성이 변화되는 것을 관찰하였다. undoped ZnO박막은 $Al_2O_3(0001)$기판을 이용하였고, pulsed laser deposition(PLD)을 이용하여 증착을 하였다. 이때 파장이 355nm인 Nd:YAG 레이저를 이용하였고 레이저의 에너지 밀도는 1.4 $J/cm^2$ 이었다. 구조적 광학적 특성을 관측하기 위하여 XRD, SEM, PL 등을 측정하였다. PL 측정 결과 성장 온도가 증가함에 따라 undoped ZnO박막의 광학적 특성이 좋아지는 것을 관찰할 수 있었다. XRD 측정 결과도 온도별 FWHM과 intensity ratio가 점차 좋아지는 것을 볼 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.5
• /
• pp.417-422
• /
• 2001

The needs of new materials that substitute Si Oxide capacitor layer in high density DRAM increase. So in this paper, we choose the slim region 14/50/50 PLZT composition and fabricated thin films by PLD and estimated the characteristics for DRAM application. 14/50/50 PLZT thin films have crystallized into perovskite structure in the $600^{\circ}C$ deposition temperature and 200 mTorr Oxygen pressure. In this condition, PLZT thin films had 985 dielectric constant, storage charge density 8.17 $\mu$C/$\textrm{cm}^2$ and charging time 0.20ns. Leakage Current density was less than 10$^{-10}$ A/$\textrm{cm}^2$ until 5V bias voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.5-5
• /
• 2008

We design and demonstrate the controled doping into ZnO nanowires (NWs) adopting self-contrived hot-walled pulsed laser deposition (HW-PLD). Optimized synthesis conditions with the diversified dopants guarantee the excellent crystalinity and morphology as well as electrical properties of the NWs. Proprietary target rotating system in the HW-PLD fuels the controlled formation and doping of the NWs. Prepared NWs sensitive to the environment are systematically characterized, and the doping mechanism is discussed.

• Proceedings of the KIEE Conference
• /
• 2007.11a
• /
• pp.112-113
• /
• 2007

We synthesize ZnO nanowires (NWs) doped with 3 wt% Ga on sapphire substrate using a hot-walled pulsed laser deposition (PLD) system named PLD in Furnace. A proprietary target rotating system is employed in the furnace to ensure the homogeneity of the deposition. The kinetic energy of the laser-ablazed ZnO is controlled for the optimization of NW formation. The physical properties of the resultant NWs are presented.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.18 no.6
• /
• pp.45-54
• /
• 2004

Usually, according as accumulation degree of semi-conductor element increases, dynamic mistake test time increases sharply, and use of pattern generator is essential at manufacturing process to solve these problem. In this paper, we designed the PLD(Programmable Logic Device) circuit of pattern generator to examine dynamic mistake of semi-conductor element. Such all item got result that is worth verified action of return trip and function through simulation, and satisfy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.317-318
• /
• 2007

In this study, transparent conducting oxide indium zinc oxide (IZO) thin films were deposited by pulsed laser deposition (PLD) Process as a function of the deposition time on the glass substrates at $400^{\circ}C$. The crystal structures, electrical and optical properties of IZO films analyzed by XRD, AFM, and UV spectrometer. High quality IZO thin film with the resistivity of $9.1{\times}10^{-4}$ ohm cm and optical transmittance over 85% was obtained for sample when deposition time was 15min. Thin films with the preferred orientations along the c axis were observed as the deposition time increased.