• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.351.2-351.2
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• 2016

Graphene quantum dots (GQDs) have attracted much attention because of various advantages such as cost-effectiveness of synthesis, low toxicity, and photostability. The origins of photoluminescence (PL) in GQDs were suggested as the intrinsic states for localized sp2 carbon domains and the extrinsic states formed by oxygen-functional groups.[1,2] Nevertheless, it is still unclear to understand the information of electric band structure in GQD. Here, we observed excitation energy induced S-shaped PL behavior. The PL peak energy position shows an S-shaped shift (redshift-blueshift-redshift) as function of the excitation wavelengths. From various samples, we only observed S-shaped PL shift in the GQDs with both luminescent origins of intrinsic and extrinsic states. Therefore, this S-shaped PL shift is related to different weight of intrinsic and extrinsic states in PL spectrum depending on the excitation wavelengths. This would be the key result to understand the electric band structure of the GQDs and its derivatives.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.89-96
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• 2003

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been performed at 6 K on the 1540 nm $^4$I$\_$(13/2)/\longrightarrow$^4$I$\_$(15/2)/ emission of Er$\^$+3/ in in situ Er-doped GaN The PL and PLE spectra of in situ Er-doped GaN are compared with those of Er-implanted GaN in this study. The lineshapes of the broad PLE absorption bands and the broad PL bands in the spectra of the in situ Er-doped GaN are similar to those in Er-doped glass rather than in the Er-implanted GaN. The PL spectra of this in situ Er-doped GaN are independent of excitation wavelength and their features are significantly different from the site-selective PL spectra of the Er-implanted GaN. These PL and PLE studies reveal that a single type of Er$\^$3+/ sites is present in the in situ Er-doped GaN and these Er sites are different from those observed in the Er-implanted GaN. In addition, the comparison of the PL single strength illustrates that the excitation of Er$\^$3+/ sites through the energy absorption of defects in Er-implanted GaN.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.33-38
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• 2000

The ~1540 nm Er$^{3+}$ photoluminescence (PL) and photoluminescence excitation (PLE) spectra of Er-implanted Mg-codoped GaN (GaN:Er+Mg) exhibit that the excitation efficiency of a specific Er$^{3+}$ center among different Er$^{3+}$ centers existing in Er-implanted GaN is selectively enhanced, compared to Er-implanted undoped GaN (GaN:Er). In GaN:Er+Mg, the 1540 nm PL peaks characteristic of the so-called "violet-pumped" Er$^{3+}$ center and the ~2.8-3.4 eV (violet) PLE band are significantly strengthened by the Mg-doping. The intra-f absorption PLE bands associated with this "violet-pumped" center are also enhanced by this doping. The 1540 nm PL peaks originating from the violet-pumped center dominate the above-gap-excited Er$^{3+}$ PL spectrum of GaN:Er+Mg, whereas it was unobservable under above-gap excitation in GaN:Er. All of these results indicate that Mg doping increases the efficiency of trap-mediated excitation of Er$^{3+}$ emission in Er-implanted GaN.planted GaN.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.624-629
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• 2006

The energy transfer process between GaN and Nd ions as well as Mg codoping effect were investigated in Nd-implanted GaN films. Photoluminescence (PL) and PL excitation spectroscopies were performed on $^4F_{3/2}{\rightarrow}^4I_{9/2}$ Nd ionic level transition. At least three below bandgap traps were identified in the energy transfer process. The number of one particular trap, which is assigned to be an isoelectronic Nd trap, is increased with the Mg-codoping. The emission efficiency with above gap excitation, which emulates the electrical excitation, is further increased in GaN:Mg,Nd.

• Current Optics and Photonics
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• v.3 no.2
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• pp.164-171
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• 2019

Photoluminescence (PL) properties of GaN-based light-emitting diodes (LEDs) were analyzed to study the effects of carrier leakage on the luminescence properties at room temperature. The electrical leakage and PL properties were compared for LEDs showing leakages at forward bias and an LED with an intentional leakage path formed by connecting a parallel resistance of various values. The leakages at the forward bias, which could be observed from the current-voltage characteristics, resulted in an increase in the excitation laser power density for the maximum PL efficiency (ratio of PL intensity to excitation power) as well as a reduction in the PL intensity. The effect of carrier leakages on PL properties was similar to the change in PL properties owing to a reduction of the photovoltage by a reverse current since the direction of the carrier movement under photoexcitation is identical to that of the reverse current. Valid relations between PL properties and electrical properties were observed as the PL properties deteriorated with an increase in the carrier leakage. The results imply that the PL properties of LED chips can be an indicator of the electrical properties of LEDs.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.49-52
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• 2015

The change of the chemical structure of graphene oxide (GO) was investigated by periodical sampling of GO during exfoliation by using a sonicator. A significant amount of GO was exfoliated during up to 10 hr of sonication. Raman and Fourier transform infrared spectroscopy revealed a continuous increase of the G/D or C=C/C=O peak ratio of GO, as the sonication time increases. The photoluminescence (PL) intensity of each GO sample also decreased as a function of the sonication time. PL excitation spectra with three major peaks indicate that the sizes of $sp^2$ carbon clusters were enlarged by longer sonication. In addition, new excitation at around 300 nm proves the existence of newly developed small clusters of $sp^2$ carbons as the sonication time increased.

• Bulletin of the Korean Chemical Society
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• v.21 no.8
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• pp.769-773
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• 2000

The dependence of photoluminescence (PL) and photoluminescence itation (PLE) on preparation condi-tions and the aging of porous silicon carbide (PSC) have been investigatted. The fiber size of the material pre-pared under dark-current mode, labele d DCM, was larger than that of the photoassisted (PA)process.The intensity of the PL spectrum for the PA condition was higher than that of the DCM condition. The PA condition giving small fiber size exhibited amore prominent high-energy component but the emission bands of both con-ditionsobserved were rather similar. The origin of the PL may have played an importantrole in the surface defect center introduced by the reaction conditions ofHFatthe surface of the silicon carbide. Selective excita-tion of the PL bandsusingdifferent excitation wavelengths has been used to identify distinct componentswith-in the PL bandwidth. Two main PL bands with peak wavelength of494 and534 nm were clearly resolved. On the other hand, selectivc emission of the PLEbands using different emission wavelengths has been used to identify distinct components within the PLE bandwidth. The higher energy band with peak wavelength of 338 nm and the lower energy bands involving 390,451 and 500 nm were clearly resolved. According to the pro-ionged aging in air, PL spectra appearedasone band, This emission probably originated from states localized to the band-to-band recombination due to the oxidation on the crystallite surface.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.109-112
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• 2018

Optical properties of InAs/GaAs submonolayer-quantum dot (SML-QD) have been investigated using excitation intensity ($I_{ex}$)- and temperature-dependent photoluminescence (PL). At a low temperature (13 K) strong PL was observed at 1.420 eV with a very narrow full-width at half maximum, of 7.09 meV. The results of the $I_{ex}$ dependence show that the PL intensities increase with increasing $I_{ex}$. The enhancement factors (k) of PL increment as a function of $I_{ex}$ are 3.3 and 1.22 at low and high $I_{ex}$ regime, respectively. The high k value at low $I_{ex}$, implies that the activation energy of the SML-QDs is low. The calculated activation energy of the SML-QDs from temperature dependence is 30 meV.

• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.513-514
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.170.2-170.2
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• 2015

Enormous interest in trivalent rare-earth (RE) ions activated luminescent materials has been gaining owing to their promising applications in bio-imaging, solar cells, white light-emitting diodes and field-emission displays. Among these trivalent RE ions, dysprosium (Dy3+) was widely investigated due to its unique photoluminescence (PL) emissions. A series of Dy3+-activated CaWO4 phosphors were prepared by a facile high-temperature solid-state reaction method. The X-ray diffraction, PL spectra, cathodoluminescence (CL) spectra as well as PL decay curves were used to characterize the prepared samples. Under ultraviolet light excitation, the characteristic emissions of Dy3+ ions were observed in all the obtained phosphors. Furthermore, the PL emission intensity increased gradually with the increment of Dy3+ ion concentration, reaching its maximum value at an optimized Dy3+ ion concentration. Additionally, color-tunable emissions were obtained in Dy3+-activated CaWO4 system by adjusting the Dy3+ ion concentration and excitation wavelength. Ultimately, strong CL properties were observed in Dy3+-activted CaWO4 phosphors. These results suggested that the Dy3+-activted CaWO4 phosphors may have potential applications in the field of miniature color displays.