• 제목/요약/키워드: PIN detector

검색결과 54건 처리시간 0.024초

Development of Spectroscopy Toolkit for Spectrum Measurement Experiments Using a CsI(Tl)/PIN Diode Detector

  • Nam, Young-Mi;Kim, Han-Soo;Ha, Jang-Ho;Lee, Jae-Hyung
    • Journal of Radiation Protection and Research
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    • 제35권2호
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    • pp.77-80
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    • 2010
  • The spectroscopy toolkit has been developed and tested. The toolkit consists of a CsI(Tl)/PIN diode detector, integrated electronics, and a multi.channel.analyzer and its size was 40 cm(width) by 20 cm(length) by 6 cm(high). It is compact, very portable and simpler and cheaper compared to the conventional spectroscopy system. The gamma energy resolutions of the toolkit were 7.9% for the 660 keV of $^{137}Cs$ and 4.9% for 1,332 keV of $^{60}Co$ respectively. The linearity for gamma energies was good. When the energy spectrum of a ceramic sample containing $^{232}Th$ was measured with the spectroscopy toolkit for 20 minutes, there were significant peaks of the heavy metal. These results show that the resolution of the spectroscopy toolkit is sufficient to accumulate a quality spectrum in a few minutes by using weak, encapsulated commercial sources. Furthermore a toolkit experiment that how to measure energy spectra using the toolkit, and how to identify specific isotopes in a pottery piece, could be widely adopted for education and even for more sophisticated and higher level experiments.

OLED광원이 집적화된 마이크로 플루이딕칩의 제작 및 특성 평가 (Fabrication and characteristic evaluation of microfluidics chip integrated OLED for the light sources)

  • 김영환;한진우;김종연;김병용;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.377-377
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    • 2007
  • A simplified integration process including packaging is presented, which enables the realization of the portable fluorescence detection system. A fluorescence detection microchip system consisting of an integrated PIN photodiode, an organic light emitting diode (OLED) as the light source, an interference filter, and a microchannel was developed. The on-chip fluorescence detector fabricated by poly(dimethylsiloxane) (PDMS)-based packaging had thin-film structure. A silicon-based integrated PIN photo diode combined with an optical filter removed the background noise, which was produced by an excitation source, on the same substrate. The active area of the finger-type PIN photo diode was extended to obtain a higher detection sensitivity of fluorescence. The sensitivity and the limit of detection (LOD S/N = 3) of the system were $0.198\;nA/{\mu}M$ and $10\;{\mu}M$, respectively.

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Signal Generation Due to Alpha Particle in Hydrogenated Amorphous Silicon Radiation Detectors

  • Kim, Ho-Kyung;Gyuseong Cho
    • Nuclear Engineering and Technology
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    • 제28권4호
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    • pp.397-404
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    • 1996
  • The hydrogenated amorphous silicon (a-Si : H) holds good promise for radiation detection from its inherent merits over crystalline counterpart. For the application to alpha spectroscopy, the induced charge collection in a-Si : H pin detector diodes ons simulated based on a relevant non-uniform charge generation model. The simulation was peformed for the initial energy and the range of incident alpha particles, detector thickness and the operational parameters such as the applied reverse bias voltage and shaping time. From the simulation, the total charge collection was strongly affected by hole collection as expected. To get a reasonable signal generation, therefore, the hole collection should be seriously considered for detector operational parameters such as shaping time and reverse voltage etc. For the spectroscopy of alpha particle from common alpha sources, the amorphous silicon should have about 70${\mu}{\textrm}{m}$ thickness.

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광 산란특성을 이용한 미세입자 감지시스템 (Small Particle Detection System by Optical Scattering Effect)

  • 김응수
    • 한국전자통신학회논문지
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    • 제7권3호
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    • pp.579-583
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    • 2012
  • 환경적으로 발생하는 미세입자를 감지하는 시스템을 설계하고 제작하였다. 미세입자 감지시스템은 광산란 현상을 이용하였으며, 레이저다이오우드, 렌즈, aperture, 수광소자로 구성되어진다. 검출시스템의 성능을 좋게 하기 위해 aperture, 렌즈, 수광소자의 위치를 시뮬레이션을 통해 최적화하였다. 제작된 감지시스템으로 유입되는 미세입자에 의한 광산란을 감지하므로 빠른 응답특성를 가지는 미세입자 감지시스템을 제작하였다.

반도체 중성자 탐지소자 개발 및 응용 (Development and Application of the Semiconductor Neutron Radiation Detector)

  • 이남호;이홍규;육영호
    • 한국군사과학기술학회지
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    • 제14권2호
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    • pp.299-304
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    • 2011
  • In this paper, we developed the semiconductor neutron radiation detector and the multi-purpose radiation detection technologies for the next generation military personal surveymeter. The PIN type semiconductor neutron detector and the prototype measure the neutron radiation dose upto 1,000cGy with ${\pm}20%$ error. It also have a good performance about the Gamma, Alpha and Beta radiation and MIL-STD-810F.

Optimization of Yonsei Single-Photon Emission Computed Tomography (YSECT) Detector for Fast Inspection of Spent Nuclear Fuel in Water Storage

  • Hyung-Joo Choi;Hyojun Park;Bo-Wi Cheon;Kyunghoon Cho;Hakjae Lee;Yong Hyun Chung;Yeon Soo Yeom;Sei Hwan You;Hyun Joon Choi;Chul Hee Min
    • Journal of Radiation Protection and Research
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    • 제49권1호
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    • pp.29-39
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    • 2024
  • Background: The gamma emission tomography (GET) device has been reported a reliable technique to inspect partial defects within spent nuclear fuel (SNF) of pin-by-pin level. However, the existing GET devices have low accuracy owing to the high attenuation and scatter probability for SNF inspection condition. The purpose of this study is to design and optimize a Yonsei single-photon emission computed tomography version 2 (YSECT.v.2) for fast inspection of SNF in water storage by acquisition of high-quality tomographic images. Materials and Methods: Using Geant4 (Geant4 Collaboration) and DETECT-2000 (Glenn F. Knoll et al.) Monte Carlo simulation, the geometrical structure of the proposed device was determined and its performance was evaluated for the 137Cs source in water. In a Geant4-based assessment, proposed device was compared with the International Atomic Energy Agency (IAEA)-authenticated device for the quality of tomographic images obtained for 12 fuel sources in a 14 × 14 Westinghouse-type fuel assembly. Results and Discussion: According to the results, the length, slit width, and septal width of the collimator were determined to be 65, 2.1, and 1.5 mm, respectively, and the material and length of the trapezoidal-shaped scintillator were determined to be gadolinium aluminum gallium garnet and 45 mm, respectively. Based on the results of performance comparison between the YSECT.v.2 and IAEA's device, the proposed device showed 200 times higher performance in gamma-detection sensitivity and similar source discrimination probability. Conclusion: In this study, we optimally designed the GET device for improving the SNF inspection accuracy and evaluated its performance. Our results show that the YSECT.v.2 device could be employed for SNF inspection.

450kVp Tube Voltage를 이용한 엔드밀링 검색 시스템 개발 (Development of End-milling Inspection System Using 450kVp Tube Voltage)

  • 윤문철;정진석;황인호;육선우;박수강;진도훈
    • 한국기계가공학회지
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    • 제8권2호
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    • pp.10-17
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    • 2009
  • Transillumination system used by radiation is widely applied to industrial imaging system. In this study, the linear detector array constructed with scintillator and pin diode, and a multi-channel data acquisition system was developed for precision inspection of end-milling. The detector module consists of $16-CdWO_4$crystal scintillator and photodiode array. The detector and data acquisition system was applied to precision inspection of end-mill and the images of the end-mill were successfully reconstructed. The total system can analyze the Detector Quantum Efficiency(DQE) of each system. The performance of developed photodiodes equipment was compared with each other for different crystal geometry and its characteristics. Finally fine details of the end-mill phantom were constructed for industrial application. The image acquired contains several objects on a real time data transfer and the linear X-ray scanning system can be applied to many fields of a industry.

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Array Type의 Single Photon Counting Digital X-ray Detector의 제작 및 특성 평가 (Fabrication and Characterization of Array Type of Single Photon Counting Digital X-ray Detector)

  • 서정호;임현우;박진구;허영;전성채;김봉회
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.32-32
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    • 2008
  • X-ray detector는 의료용, 산업용 등 다양한 분야에서 사용되어지고 있으며 기존의 Analog X-ray 방식의 환경오염, 저장공간 부족, 실시간 분석의 어려움 등의 문제점들을 해결하기 위하여 Digital X-ray로의 전환과 연구가 활발하며 이에 따른 관심도 높아지고 있는 살점이다. Digital X-ray detector는 p-영역과 n-영역 사이에 아무런 불순물을 도핑하지 않은 진성반도체(intrinsic semiconductor) 층을 접합시킨 이종접합 PIN 구조의 photodiode 이다. 이 소자는 역바이어스를 가해주면 p영역과 n영역 사이에서 캐리어 (carrier)가 존재하지 않는 공핍 영역이 발생하게 된다. 이런 공핍 영역에서 광흡수가 일어나면, 전자-정공 쌍이 발생한다. 그리고, 발생한 전자-정공 쌍에 전압이 역방향으로 인가되는 경우, 전자는 양의 전극으로 이동하고, 정공은 음의 전극으로 이동한다. 이와 같이, 발생한 캐리어들을 검출하여 전기적인 신호로 변환 시킨다. 고해상도의 Digital X-ray detector를 만들기 위해서는 누설전류에 의한 noise 감소와 소자의 높은 안정성과 내구성을 위한 높은 breakdown voltage를 가져야 한다. 본 연구에서는 Digital X-ray detector의 leakage current 감소와 breakdown voltage를 높이기 위하여 guradring과 gettering technology를 사용하여 전기적 특성을 분석하였다. 기판으로는 $10k\Omega{\cdot}cm$ resistivity를 갖으며, n-type <111>인 1mm 두께의 4인치 Si wafer를 사용하였다. 그리고 pixel pitch는 $100{\mu}m$이며 active area는 $80{\mu}m{\times}80{\mu}m$$32\times32$ array를 형성하여 X-ray를 조사하여 소자의 특성을 평가 하였다.

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Chip소자를 이용한 PLVCO의 설계 및 제작 (The Design Fabrication PLVCO Using Chip Element)

  • 하성재;이용덕;이근태;안창돈;홍의석
    • 한국통신학회논문지
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    • 제26권12C호
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    • pp.268-272
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    • 2001
  • 본 논문에서는 24.42 GHz 전압제어 Hair-Pin 공진 발진기, 주파수 분주기, 완충 증폭기,-l0 dB 방향성 결합기, 위상 비교기를 이용하여 B-WLL용 PLVCO LO회로를 설계 및 제작하였다. 위상 고정된 발진기는 24.42GHz에서 16.5dBm의 출력을 나타내었으며 위상잡음은 중심주파수 24.42 GHz의 100kHz offset된 지점에서 -76.3 dBc/Hz, 10 kHz offset에서 -72.8 dBc/Hz를 얻었다.

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고성능 광각 3차원 스캐닝 라이다를 위한 스터드 기술 기반의 대면적 고속 단일 광 검출기 (Large-area High-speed Single Photodetector Based on the Static Unitary Detector Technique for High-performance Wide-field-of-view 3D Scanning LiDAR)

  • 한문현;민봉기
    • 한국광학회지
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    • 제34권4호
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    • pp.139-150
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    • 2023
  • 다양한 구조의 라이다(light detection and ranging, LiDAR)가 존재함에도 불구하고 넓은 화각을 유지하면서 장거리 측정과 수직, 수평 방향 모두에서 높은 해상도를 만족하는 LiDAR를 구현하는 것은 매우 어렵다. 스캐닝 구조는 장거리 탐지 및 수직, 수평 방향에 대한 높은 해상도를 만족하는 고성능 LiDAR를 구현하는 데 유리하지만, 넓은 화각을 확보하기 위해서는 검출 속도에 불리한 대면적 광 검출기(photodetector, PD)가 필수적이다. 따라서 이러한 문제점을 해결하기 위해 다수의 소면적 PD를 고속의 단일 대면적 PD로 작동할 수 있는 static unitary detector(STUD) 기술 기반의 PD를 제안하였다. 본 논문에서 제안하는 InP/InGaAs STUD PIN-PD는 1,256 ㎛×19 ㎛의 단위 면적을 가지는 32개 소면적 PD를 활용하여 1,256 ㎛×949 ㎛ 이내에서 다양한 형태로 설계 및 제작하였다. 이후 다양한 형태로 제작된 STUD PD의 특성과 감도는 물론 이를 활용한 LiDAR 수신 보드의 잡음 및 신호 특성에 대해 측정 및 분석하였다. 마지막으로 STUD PD가 적용된 LiDAR 수신 보드를 1.5-㎛ master oscillator power amplifier 레이저를 광원으로 활용하는 3차원 스캐닝 LiDAR 시제품에 적용하였고, 이를 통해 대각 32.6도의 광각에서 50 m 이상의 장거리 물체를 정밀하게 탐지하면서 320 px×240 px의 고해상도 3차원 영상을 동시에 확보하였다.