• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.25 no.4
• /
• pp.65-70
• /
• 2011

Perfluorocompounds (PFCs) gases were decomposed by gliding arc plasma generated by AC pulse power. $N_2$ gas of 10 LPM flow rate and $H_2$ gas of 0.5 LPM were introduced into the gliding arc plasma generated between a pair of electrodes with SUS 303 material, and the PFCs gases were injected in the plasma and thereby were decomposed. The PFCs gas-decomposition-characteristics through the gliding arc plasma were analyzed by FT-IR, where pure $N_2$ and $H_2$-added $N_2$ environment were used to generate the gliding arc plasma. The PFCs gas-decomposition-properties were changed by electric power for gliding arc plasma generation and the H2 gas addition was effective to enhance the PFCs decomposition rate.

• Bulletin of the Korean Chemical Society
• /
• v.28 no.8
• /
• pp.1383-1388
• /
• 2007

Recently, the semiconductor and display industries have tried to reduce the emissions of perfluorocompounds (PFCs) from the globally environmental regulation. Total amount of PFC emission can be calculated from the flow rate and the partial pressures of PFCs. For the precise measurement of PFC emission amount, the mass flow controlled helium gas was continuously injected into the equipment of which scrubber efficiency is being measured. The partial pressures of PFCs and helium were accurately measured using a mass spectrometer in each sample extracted from inlet and outlet of the scrubber system. The flow rates are calculated from the partial pressures of helium and also, PFC destruction and removal efficiency (DRE) of the scrubber is calculated from the partial pressure of PFC and the flow rate. Under this method, the relative expanded uncertainties of the flow rate and the partial pressures of PFCs are ± 2% (k = 2) in case the concentrations of NF3 and SF6 are as low as 100 μmol/mol.

• Applied Chemistry for Engineering
• /
• v.29 no.1
• /
• pp.10-17
• /
• 2018

POU (point of use) scrubbers were applied for the treatment of waste gases including PFCs (perfluorocompounds) exhausted from the CVD (chemical vapor deposition), etching, and cleaning processes of semiconductor and display manufacturing plant. The GWP (global warming potential) and atmosphere lifetime of PFCs are known to be a few thousands higher than that of $CO_2$, and extremely high temperature more than 3,000 K is required to thermally decompose PFCs. Therefore, POU gas scrubbers based on the thermal plasma technology were developed for the effective control of PFCs and industrial application of the technology. The thermal plasma technology encompasses the generation of powerful plasma via the optimization of the plasma torch, a highly stable power supply, and the matching technique between two components. In addition, the effective mixture of the high temperature plasma and waste gases was also necessary for the highly efficient abatement of PFCs. The purpose of this paper was to provide not only a useful technical information of the post-treatment process for the waste gas scrubbing but also a short perspective on R&D of POU plasma gas scrubbers.

• Clean Technology
• /
• v.17 no.3
• /
• pp.250-258
• /
• 2011

Thermal plasma has been presented for the decomposition of perfluorocompounds (PFCs) which are extensively used in the semiconductor manufacturing and display industry. We developed pilot-scale equipment to investigate the large scale treatment of PFCs and called it a "thermal plasma scrubber". PFCs such as $CF_4$, $C_2F_6$, $SF_6$, and $NF_3$ used in experiments were diluted with $N_2$. There were two different types of experiment setup related to the water spray direction inside the thermal plasma scrubber. The first type was that the water was sprayed directly into the gas outlet located at the exit of the reaction section. The second type was that the water was sprayed on the wall of the quenching section. More effective decomposition took place when the water was sprayed on the quenching section wall. For $C_2F_6$, $SF_6$, and $NF_3$ the maximum destruction and removal efficiency was nearly 100%, and for $CF_4$ was up to 93%.

• Proceedings of the Korea Air Pollution Research Association Conference
• /
• 2007.10a
• /
• pp.249-250
• /
• 2007

• Clean Technology
• /
• v.23 no.2
• /
• pp.181-187
• /
• 2017

The perfluorocompounds (PFCs) emitted from the semiconductor and display manufacture is treated by abatement systems which use various technologies, such as combustion, thermal, plasma, catalyst. However, it is required that the system should overcome their drawbacks with excess energy consumption and low removal efficiency. The new technology using combination of pressure swing adsorption and excess enthalpy combustion for the reduction of PFCs emissions were developed and analyzed its characteristics. PFCs concentration ratio and PFCs loss factor were calculated from measuring concentration of PFCs at the calculated by comparing concentration of PFCs at the combustor's inlet and outlet. There were performance evaluations with various gas flow for comparing energy consumption and removal efficiency with existing equipments. The concentration ratio and the loss factor of PFCs were 1.65, 8.2%, respectively, when the total gas flow of the pressure swing absorption (PSA) inlet was 204 liter per minute (LPM) and $CF_4$ concentration was 1412 ppm. In comparison with existing system at constant condition, $CF_4$ removal efficiency for a porous media combustion (PMC) showed the improvement more than 16% and the consumed energy was also reduced up to approximately 41%. Then, the total gas flow introduced into PMC and $CF_4$ concentration were 91-LPM and 2335 ppm, respectively, and the destruction and removal efficiency of $CF_4$ was about 96% at 19-LPM $CH_4$, and 40-LPM $O_2$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.119.2-119.2
• /
• 2014

대기환경 규제가 강화됨에 따라 기존 기술 대비 획기적인 성능과 가격 경쟁력을 갖춘 새로운 대기환경 기술에 대한 수요가 지속적으로 요구되고 있다. 특히 최근에는 종래의 분진, 이산화황가스 및 질소산화물에 대한 규제와 더불어 지구온난화가스인 이산화탄소, 과불화화합물 (Perfluorocompounds, PFCs), 메탄가스 등에 대한 규제가 강화되면서 이에 대응할 수 있는 대기환경 기술의 수요가 늘고 있다. 한국기계연구원에서는 지난 10 여 년간 지구온난화가스이자 난분해성 가스인 메탄 및 PFCs 가스를 플라즈마 화학반응 공정을 통해 분해하는 연구를 수행해왔으며, 이를 바탕으로 산업에 적용할 수 있는 기술개발도 병행하여 수행하였다. 현재 개발된 기술 가운데 일부는 산업에 실제로 적용되고 있으며, 이를 통해 산업현장에서는 지구온난화가스는 물론 질소산화물과 같은 다른 종류의 규제물질도 동시에 저감할 수 있었다. 본 발표에서는 플라즈마를 활용하여 난분해성 가스인 메탄과 PFCs를 분해하는 기술의 특성을 살펴보았으며, 이를 바탕으로 산업현장에 적용된 대기환경기술이 어떻게 활용되고 있는지를 소개하고 있다. 본 발표에서 다루게 될 플라즈마 발생기술은 펄스 코로나, 유전체장벽방전, 마이크로웨이브 토치, 아아크 토치 등이며, 플라즈마 발생조건은 수 torr 이하의 진공조건부터 및 대기압 조건에 이르고 있다.

• Journal of Korean Society for Atmospheric Environment
• /
• v.26 no.6
• /
• pp.690-696
• /
• 2010

Abatement of perfluorocompounds (PFCs) used in semiconductor and display industries has received an attention due to the increasingly stricter regulation on their emission. In order to meet this circumstance, we have developed a radio frequency (RF) driven plasma reactor with multiple annular shaped electrodes, characterized by an easy installment between a processing chamber and a vacuum pump. Abatement experiment has been performed with respect to $CF_4$, a representative PFCs widely used in the plasma etching process, by varying the power, $CF_4$ and $O_2$ flow rates, $CF_4$ concentration, and pressure. The influence of these variables on the $CF_4$ abatement was analyzed and discussed in terms of the destruction & removal efficiency (DRE), measured with a Fourier transform infrared (FTIR) spectrometer. The results revealed that DRE was enhanced with the increase in the discharge power and pressure, but dropped with the $CF_4$ flow rate and concentration. The addition of small quantity of $O_2$ lead to the improvement of DRE, which, however, leveled off and then decreased with $O_2$ flow rate.

• Journal of Korean Society for Atmospheric Environment
• /
• v.26 no.1
• /
• pp.85-93
• /
• 2010

$CF_4$ removal characteristics were investigated using an elongated arc reactor. The advantage of the elongated arc reactor includes direct use of treated gas as plasma operating gas and the enhancement of the removal reaction by using a thermo-chemistry and a plasma induced chemistry at the same time. Geometrical configurations, such as the length of the reactor and the shape of a throat, were tested to get an optimized removal efficiency with low power consumption. As results, over 95% of $CF_4$ removal was obtained with 300 lpm of total flowrate for various $CF_4$ concentration (0.1~1%). Corresponding specific energy density (SED), which means required electrical energy to treat the unit volume of treated gas, is about 3.5 kJ/L, The present technique can be applied to real applications by satisfying three major concerns, those are the high flowrate of treated gas, high removal efficiency (> 95%), and low power consumption (< 10 kJ/L).

• Journal of the Korean institute of surface engineering
• /
• v.34 no.5
• /
• pp.403-408
• /
• 2001

In this work, the cyclic perfluorinated ether (c-C$_4$F$_{8}$O) with very high destructive removal efficiency (DRE) than other alternative gases, such as $C_3$F$_{8}$, c-C$_4$F$_{8}$ and NF$_3$ was used as an alternative process chemical. The plasma cleaning of silicon nitride using gas mixtures of c-C$_4$F$_{8}$O/O$_2$ and c-C$_4$F$_{8}$O/O$_2$+ $N_2$ was investigated in order to evaluate the effects of adding $N_2$ to c-C$_4$F$_{8}$O/O$_2$ on the global warming effects. Under optimum condition, the emitted net perfluorocompounds (PFCs) during cleaning of silicon nitride were quantified and then the effects of additive $N_2$ by obtaining the destructive removal efficiency (DRE) and the million metric tons of carbon equivalent (MMT-CE) were calculated. DRE and MMTCE were obtained by evaluating the volumetric emission using. Fourier transform-infrared spectroscopy (FT-IR). During the cleaning using c-C$_4$F$_{8}$O/O$_2$+$N_2$, DRE values as high as (equation omitted) 98% were obtained and MMTCE values were reduced by as high as 70% compared to the case of $C_2$F$_{6}$O$_2$. Recombination characteristics were indirectly investigated by combining the measurements of species in the chamber using optical emission spectroscopy (OES), before and after the cleaning, in order to understand any correlation between plasma and emission characteristics as well as cleaning rate of silicon nitride.silicon nitride.