• Current Photovoltaic Research
• /
• v.8 no.4
• /
• pp.114-119
• /
• 2020

In this study, Mitigation of Potential-induced degradation (PID) for PERC solar cells using SiO2 Structure of ARC layer. The conventional PID test was conducted with a cell-level test based on the IEC-62804 test standard, but a copper PID test device was manufactured to increase the PID detection rate. The accelerated aging test was conducted by maintaining 96 hours with a potential difference of 1000 V at a temperature of 60℃. As a result, the PERC solar cell of SiO2-Free ARC structure decreased 22.11% compared to the initial efficiency, and the PERC solar cell of the Upper-SiO2 ARC structure decreased 30.78% of the initial efficiency and the PID reliability was not good. However, the PERC solar cell with the lower-SiO2 ARC structure reduced only 2.44%, effectively mitigating the degradation of PID. Na+ ions in the cover glass generate PID on the surface of the PERC solar cell. In order to prevent PID, the structure of SiNx and SiO2 thin films of the ARC layer is important. SiO2 thin film must be deposited on bottom of ARC layer and the surface of the PERC solar cell N-type emitter to prevent surface recombination and stacking fault defects of the PERC solar cell and mitigated PID degradation.

• Current Photovoltaic Research
• /
• v.6 no.4
• /
• pp.94-101
• /
• 2018

Light elevated temperature induced degradation (LeTID) was noted as an issue in multi-crystalline silicon solar cells (MSSC) by Ram speck in 2012. In contrast to light induced degradation (LID), which has been researched in silicon solar cells for a long time, research about both LeTID and the mechanism of LeTID has been limited. In addition, research about LeTID in single-crystalline silicon solar cells (SSSC) is even more limited. In order to improve understanding of LeTID in SSSC with a passivated emitter rear contact (PERC) structure, we fabricated four group samples with boron and oxygen factors and evaluated the solar cell characteristics, such as the cell efficiency, $V_{oc}$, $I_{sc}$, fill factor (FF), LID, and LeTID. The trends of LID of the four group samples were similar to the trend of LeTID as a function of boron and oxygen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.4
• /
• pp.291-296
• /
• 2020

The high power of a shingled photovoltaic module can be attributed to its low cell-to-module loss. The production of high power modules in limited area requires high efficiency solar cells. Shingled photovoltaic modules can be made by divided solar cells, which can be produced by the laser scribing process. After dividing the 21% PERC cell using laser scribing, the efficiency decreased by approximately 0.35%. However, there was no change in the efficiency of the solar cell having relatively lower efficiency, because the laser scribing process induce higher heat damages in solar cells with high efficiency. To prove this phenomena, the J₀ (leakage current density) of each cell was analyzed. It was found that the J₀ of 21% PERC increased about 17 times between full and divided solar cell. However, the J₀ of 20.2% PERC increased only about 2.5 times between full and divided solar cell.

• Solar Energy
• /
• v.17 no.1
• /
• pp.17-26
• /
• 1997

Since PESC(passivated emitter solar cell) was developed in 1985, high efficiency silicon solar cell technology based on planar technology has been improved in the order of PERC, Point Contact Solar Cell, PERL. BCSC and DSBC, which do not require photolithography, are expected to replace commercial screen printed cells because of its potential for low cost and high efficiency. In this paper, history and characteristics of each type of cells are reviewed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.12
• /
• pp.1352-1355
• /
• 2004

We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.

• Current Photovoltaic Research
• /
• v.9 no.4
• /
• pp.123-127
• /
• 2021

This study was on electrode design for the realization of a solar cell that combines electrode formation and module integration process to overcome printing limitations. We used the passivated emitter rear contact (PERC) solar cell. Wafer size was 156.75 mm ×156.75 mm. The fabricated cell results showed that the open-circuit voltage of 649 mV, short-circuit current density of 36.15 mA/cm², fill factor of 68.5%, and efficiency of 16.06% with electrode conditions the 24BBs with the width 190 ㎛ and 90FBs with the width 45 ㎛. For improving efficiency, the characteristics of the solar cell were checked according to the change in the number of BBs and FBs and the change in line fine width. It is confirmed that the efficiency of the solar cell will be improved by increasing the number of FBs from 90 to 120, and increasing the line width of the FBs by about 10 ㎛ compared to the manufacturing solar cells.

• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.4
• /
• pp.55-60
• /
• 2020

The PERC photovoltaic (PV) modules installed in PV power plant are still reports potential-induced degradation (PID) degradation due to high voltage potential differences. This is because Na+ ions in the cover glass of PV modules go through the encapsulant (EVA) and transferred to the surface of solar cells. As positive charges are accumulated at the ARC (SiOx/SiNx) interface where many defects are distributed, shunt-resistance (Rsh) is reduced. As a result, the leakage current is increased, and decrease in solar cell's power output. In this study, to prevent of this phenomenon, a Moth-eye nanostructure was deposited on the rear surface of an optical film using Nano-Imprint Lithography method, and a solar mini-module was constructed by inserting it between the cover glass and the EVA. To analyze the PID phenomenon, a cell-level PID acceleration test based on IEC 62804-1 standard was conducted. Also analyzed power output (Pmax), efficiency, and shunt resistance through Light I-V and Dark I-V. As a result, conventional solar cells were decreased by 6.3% from the initial efficiency of 19.76%, but the improved solar cells with the Moth-eye nanostructured optical film only decreased 0.6%, thereby preventing the PID phenomenon. As of Moth-eye nanostructured optical film, the transmittance was improved by 4%, and the solar module output was improved by 2.5%.

• Journal of the Microelectronics and Packaging Society
• /
• v.26 no.3
• /
• pp.75-80
• /
• 2019

Silicon solar cells have been widely used as a most promising renewable energy source due to eco-friendliness and high efficiency. As modules of silicon solar cells are connected in series for a practical electricity generation, a large voltage of 500-1,500 V is applied to the modules inevitably. Potential-induced degradation (PID), a deterioration of the efficiency and maximum power output by the continuously applied high voltage between the module frames and solar cells, has been regarded as the major cause that reduces the lifetime of silicon solar cells. In particular, the migration of the $Na^+$ ions from the front glass into Si through the anti-reflection coating and the accumulation of $Na^+$ ions at stacking faults inside Si have been reported as the reason of PID. In this research, the thickness effect of $SiO_x$ layer that can block the migration of $Na^+$ ions on the reduction of PID is investigated as it is incorporated between anti-reflection coating and p-n junction in p-type PERC solar cells. From the measurement of shunt resistance, efficiency, and maximum power output after the continuous application of 1,000 V for 96 hours, it is revealed that the thickness of $SiO_x$ layer should be larger than 7-8 nm to reduce PID effectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.687-687
• /
• 2013

In rearpoint contact solar cell and the PERC (passivated emitter rear contact) type cell, surfaces were passivated by SiO2 or Al2O3 to increase solar cell efficiency. Therefore, we have investigated the effect of surface passivation for crystalline silicon solarcell using mass-production atomic layer deposited (ALD) Al2O3. The patttern which consists of cylinders with 100um diameter and 5um height was formed by PR patterning on Si (100) substrate and then Al2O3 of about 10nm and 20nm thickness was deposited by ALD. The pattern in 10 nm Al2O3 film was removed by dipping in aceton solution for about 10 min but the pattern in 20 nm Al2O3 film was not. The influences of process temperature and heat treatment were investigated using microwave photoconductance decay (PCD) and Quasi-Steady-State photoconductance (QSSPC). The solar cell process used in this work combines the advantage of using the applicability of a selective deposition associated with a ALD passivation and the use of low-cost screen print for the contacts formation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.1
• /
• pp.16-22
• /
• 2023

In a solar cell, degradation refers to the decrease in performance parameters caused by defects originated due to various causes. During the fabrication process of solar cells, degradation is generally related to the processes such as passivation or firing. There exist sources of many types of degradation; however, the exact cause of Light and elevated Temperature Induced Degradation (LeTID) is yet to be determined. It is reported that the degradation and the regeneration occur due to the recombination of hydrogen and an arbitrary substance. In this paper, we report the deposition of Al₂O₃ and SiN_X on silicon wafers used in the Passivated Emitter and Rear Contact (PERC) solar structure and its degradation pattern. A higher degradation rate was observed in the sample with single layer of Al₂O₃ only, which indicates that the degradation is affected by the presence or the absence of a passivation thin film. In order to alleviate the degradation, optimization of different steps should be carried out in consideration of degradation in the solar cell fabrication process.