• Korean Journal of Materials Research
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• v.11 no.7
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• pp.550-555
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• 2001

A diamond-like carbon(DLC) films were deposited on the borosilicate glass substrate by radio frequency plasma enhanced chemical deposition(rf-PECVD). The $methane(CH_4)-hydrogen(H_2)$ gas mixture was used as precursor gas. The morphologies, the structure and the optical properties of the DLC films were investigated by SEM, Raman and UV spectrometer. The deposition rate was slightly increased with the hydrogen concentration in the gas mixture and it maintained constant at over 25 sccm of the gas flow rate. The optical band gap calculated by UV spectra decreased with increase of deposition time and DC self bias, but that were not effected by hydrogen content. Most effective parameter on the transmittance of film was bias voltage, especially in the range of ultra violet and visible light.

• Journal of Information Display
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• v.11 no.3
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• pp.109-112
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• 2010

The solid phase compositions and dielectric properties of silicon nitride ($SiN_x$) films prepared using the plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature ($200^{\circ}C$) were studied. Controlling the source gas mixing ratio, R = $[N_2]/[SiH_4]$, and the plasma power successfully produced both silicon-rich and nitrogen-rich compositions in the final films. The composition parameter, X, varied from 0.83 to 1.62. Depending on the film composition, the dielectric properties of the $SiN_x$ films also varied substantially. Silicon-rich silicon nitride (SRSN) films were obtained at a low plasma power and a low R. The photoluminescence (PL) spectra of these films revealed the existence of nano-sized silicon particles even in the absence of a post-annealing process. Nitrogen-rich silicon nitride (NRSN) films were obtained at a high plasma power and a high R. These films showed a fairly high dielectric constant ($\kappa$ = 7.1) and a suppressed hysteresis window in their capacitance-voltage (C-V) characteristics.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.1
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• pp.111-116
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• 2006

In this paper, the image sensor using the a-Si:H TFT is proposed. The optimum amorphous silicon thin film is deposited using plasma enhanced chemical vapor deposition (PECVD). TFT and photodiode both with the thin film are fabricated and form image sensor. The photodiode shows that Idark is $10^{-12}A$, Iphoto is $10^{-9}A$ and Iphoto/Idark is $10^3$, respectively. In the case of a-Si:H TFT, it indicates that Ion/Ioff is $10^6$, the drain current is a few ${\mu}A$ and Vth is $2\~4$ volts. For the analysis on the fabricated image sensor, the reverse bias of -5 voltage in ITO of photodiode and $70{\mu}sec$ pulse in the gate of TFT are applied. The image sensor with good property was conformed through the measured photo/dark current.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.29-34
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• 1998

The solid-phase crystallization (SPC) of plasma-enhanced chemical vapor depsoited (PECVD) amorphous silicon (a-Si) films ha s been investigated by x-ray diffraction (XRD). The a-Si films were prepared on Si (100) wafers using $SiH_4$ gas and without $H_2$ dilution at the substrate temperatures between $120^{\circ}C$ and $380^{\circ}C$, and than annealed at $600^{\circ}C$ for crystallization. The annealed samples exhibited (111), (220), and (311) XRD peaks with preferential orientation of (111). The XRD peak intensities increased as the substrate temperature decreased, and the $H_2$dilution suppressed the solid-phase crystallization. The average grain size estimated by XRD analysis for the (111) texture has increased from about 10 nm to about 30 nm, as the substrate temperature decreased. The deposition rate also increased with the decreasing substrate temperature and the grain size was closely dependent on the deposition rate of the films. The grain size enhancement was attributed to an increase of the structural disorder of the Si network.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.34-38
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• 1992

Low temperature device processing has become of great interest within the last few years. In such low temperature processes, SiO$_2$films formed by Plasma-enhanced chemical vapor deposition (PECVD) have been studied. PECVD SiO$_2$films were formed with substrate temperature, and annealing time and temperature of RTP changed, and its'characteristics were obsreved by C-V measurement. We found that the quality of SiO$_2$films formed by PECVD depended on annealing time rather than substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.186-187
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• 2006

본 논문에서는 PECVD를 이용하여 증착시킨 실리콘 산화막에 영향을 주는 파라미터 입력에 따른 박막의 특성을 평가하기 위하여 먼저 통계적 실험계획을 통해 산화막 특성에 유의한 영향을 미치는 요인을 분석하고, 분석된 결과를 이용하여 가장 유의한 교호작용을 신경망 모델링에서 입력파라미터로 포함시킴으로서 교호작용을 고려하지 않은 경우와의 학습결과를 비교하여 두가지 모델링 방법 중 교호작용을 고려한 신경망 모델의 경우가 PECVD의 물리적 현상을 더 명확히 설명할 수 있음을 확인했다.

• Particle and aerosol research
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• v.11 no.4
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• pp.93-98
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• 2015

Particles which generated from plasma enhanced chemical vapor deposition (PECVD) during thin film deposition process can affect to the process yield. By using light extinction method, ISPM can measure particles in the large-diameter pipe (${\leq}300mm$). In our research, in-situ particle monitor (ISPM) sensor was installed at the 300 mm diameter exhaust-line to count the particles in each size. In-house flange for mounting the transmitting and receiving parts of ISPM was carefully designed and installed at a certain point of exhaust line where no plasma light affect to the light extinction measurement. Measurement results of trend changes on particle count in each size can confirm that ISPM is suitable for real-time monitoring of vacuum process.

• Journal of the Korean Ceramic Society
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• v.38 no.6
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• pp.531-536
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• 2001

SiCl$_4$/CH$_4$/H$_2$계를 사용한 플라즈마 화학증착법(PECVD)으로 실리콘(100) 기판 위에 3C-SiC막을 117$0^{\circ}C$~1335$^{\circ}C$의 온도범위에서 증착하였다. 증착온도, 유입가스비, R$_{x}$ [=CH$_4$/(CH$_4$+H$_2$)], 그리고 r.f. power를 변화시켜 증착막의 결정성에 대해 검토하였다. Thermal CVD에 비해 PECVD법은 박막의 증착속도를 향상시켰다. 증착된 3C-SiC은 (111) 면으로 최대의 우선배향성을 지님을 알 수 있었다. 실리콘 기판 위의 3C-SiC막의 결정성은 R$_{x}$값에 의존하였으며, R$_{x}$가 감소할수록 결정성이 더욱 향상되었다. Free Si가 3C-SiC막과 함께 증착되었으나, 증착온도와 r.f power가 증가함에 따라 free Si의 함량은 감소하였다. 증착온도 127$0^{\circ}C$, 유입가스비 R$_{x}$=0.04, r.f. power가 60W에서 비교적 결정성을 가진 3C-SiC막을 얻을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.540-540
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• 2013

In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped ethylcyclohexane plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Ethylcyclohexenewas used as organic precursor (carbon source) with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. The ellipsometry results showed the refractive index change of the N-doped ethylcyclohexene plasma polymer film. The FT-IR spectrashowed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.479-483
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• 2002

Silicon dioxide thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition(PECVD) method, at a low temperature ($320^{\circ}$C) and from $(SiH_4+N_2O)$ gas mixtures. The effects of deposition parameters on properties of $SiO_2$ thick films were investigated by variation of $N_2O/SiH_4$ flow ratio and RF power. After the deposition process, the samples were annealed in a furnace at $1150^{\circ}$C, in N2 atmosphere, for 2h. As the $N_2O/SiH_4$ flow ratio increased, deposition rate decreased from 9.4 to 2.9 ${\mu}m/h$. As the RF power increased, deposition rate increased from 4.7 to 6.9 ${\mu}m/h$. The thickness and the refractive index measurements were measured by prism coupler. X-ray Photoelectron Spectroscopy(XPS) and Fourier Transform-infrared Spectroscopy(FT-IR) were used to determine the chemical states. The cross-section of films was observed by Scanning Electron Microscopy(SEM).