• JSTS:Journal of Semiconductor Technology and Science
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• 제11권3호
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• pp.162-168
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• 2011

In this paper, we propose a new Verilog-A current-voltage model for multi-level-cell PCRAMs. This model can describe the PCRAM operation not only in full SET and RESET states but also in the partial resistance states. And, 3 PCRAM operating regions of SET-RESET, Negative Differential Resistance, and strong-ON are unified into one equation in this model thereby any discontinuity that may introduce a convergence problem cannot be found in the new PCRAM model. The percentage error between the measured data and this model is as small as 7.4% on average compared to 60.1% of the previous piecewise model. The parameter extraction which is embedded in the Verilog-A code can be done automatically.