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Kim, Jong-Seong;Jeong, Yong-Tae;Seok, Jin-U
- Proceedings of the Korean Institute of Surface Engineering Conference
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- 2007.11a
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- pp.132-133
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- 2007
제품 표면에 코팅을 하는 것은 원자재나 디자인을 개선하는 것보다 훨씬 효과적인 결과를 가져온다. 제품에 코팅을 적용하면 성능과 신뢰성이 향상되어 수명이 증가되고, 소형 경량화가 가능해진다. 자동차 엔진과 그 외의 부품에 적용할 경우 에너지 절감 효과가 있고 친환경 요구에 부응할 수 있어 그 효과가 크다. 시스템의 잠재된 성능은 특정 목적에 따라 맞춤된 PVD/PACVD 코팅에 의해서 향상 될 수 있고, 실제로도 많은 경우 PVD/PACVD 코팅만이 새로운 설계 솔루션을 실현 가능하게 해준다.
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김동찬;김병윤;이병일;김동환;주승기
- Journal of the Korean Institute of Telematics and Electronics A
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- v.33A no.10
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- pp.98-106
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- 1996
A thin film of aluminum for ultra large scale integrated circuits metalization has been deposited on TiN and SiO$_{2}$ substrates by plasma assisted chemical vapor deposition using DMEAA (dimenthylethylamine alane) as a precursor. The effects of plasma on surface topology and growth characteristics were investigated. Thermal CVD Al could not be got continuous films on insulating subsrate such as SiO$_{2}$. However, it was found that Al films could be deposited on SiO$_{2}$ substate without any pretreatments by the hydrogen plasma for pyrolysis of DMEAA. Compared to the thermal CVD, PACVD films showed much better reflectance and resistance on TiN and SiO$_{2}$ substrate. We obtained mirror-like PACVD Al film of 90% reflectance and resistance on TiN and SiO$_{2}$ substrates. We obtained mirror-like PACVD Al film of 90% reflectance on TiN substrate. Excellent conformal step coverage was obtained on submicron contact holes ;by the PACVD blanket deposition.
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Kim, Dae-Il;Lee, Sang-Hee;Park, Gu-Bum;Park, Sang-Hyun;Lee, Yong-Geun;Kim, Bo-Youl;Kim, Young-Bong;Lee, Duck-Chool
- The Transactions of the Korean Institute of Electrical Engineers C
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- v.49 no.11
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- pp.596-602
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- 2000
Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD)radio frequency plasma-assisted chemical vapor deposition). In order to increased the nucleation density, the WC-Co substrate was polished with 3${\mu}m$ diamond paste. And the WC-Co substrate was preatreated in $HNO_3\;:\;H_2O$ = 1:1 and $O_2$ plasma. In $H_2-CH_4$ gas mixture, the crystallinity of thin film increased with decreasing $CH_4$ concentration at 800W discharge power and 20torr reaction pressure. In $H_2-CH_4-O_2$ gas mixture, the crystallinity of thin film increased with increasing $O_2$ concentration at 800W discharge power, 200torr reaction pressure and 4% $CH_4$ concentration.
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