• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.265-268
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• 1991

In the study, PPTMDSO(plasma-polymerized tetramethyldisiloxane) films were deposited on on glass substrate in a paralled plate reactor. As the function of RF power increased from 20 W to 110 W, and the substrate temperature increased from $25^{\circ}C$ to $100^{\circ}C$, the deposit ion rate, increased. When oxygen was intentionally added in monomer vapor, the concentration of Si-O-Si bonds increased while C-H, Si-H, -CH3, Si(CH3)x, -CH3, and Si-C bonds decreased in IR spectra. Thermal stability of PPTMSDO film were investigated and weight loss at $800^{\circ}C$ was 7.3 %.

• Bulletin of the Korean Chemical Society
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• v.30 no.10
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• pp.2371-2376
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• 2009

Three phenoxazine-based conjugated polymers, namely, the aryl substituted phenoxazine homopolymer (P1) as well as the dimeric phenoxazine-fluorene (P2) and phenoxazine-bithiophene (P3) copolymers, were synthesized via the Ni(0) mediated Yamamoto reaction and the palladium-catalyzed Suzuki coupling reaction. The weight-averaged molecular weights ($M_w$) of P1, P2, and P3 were found to be 27,000, 22,000, and 15,000, respectively, and their polydispersity indices were 3.6, 1.8, and 2.1. All the polymers were soluble in common organic solvents such as chloroform, toluene, and so on. The UV-visible absorption maxima for P1, P2, and P3 in the film state were located at 421, 415 and 426 nm, respectively, and the ionization potentials of the polymers ranged between 4.90 and 5.12 eV. All the studied phenoxazine-based polymers exhibited amorphous behavior, as confirmed by X-ray diffraction (XRD) and atomic force microscopy (AFM) studies. Thin film transistors were fabricated using the top-contact geometry. P1 showed much better thin-film-transistor performance than P2 or P3: A thin film of P1 gave a saturation mobility of 0.81 ${\times}\;10^{-3}\;cm^2V^{-1}s^{-1}$ and an on/off ratio of about $10^2$.

• Journal of Bio-Environment Control
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• v.11 no.4
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• pp.175-180
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• 2002

This study was conducted to examine the effect of row covering materials on the growth and yield of broccoli for early production in the open meld. Materials for plastic tunnel were row-covering (ventilating non-woven fabric), perforated film (2.3％ pore space) and P.E. film. The types of row covers were tunnel and covering period was one months after transplanting. The row cover and perforated film increased daily air and soil temperature by 3~4$^{\circ}C$ and 2~3$^{\circ}C$, respectively as compared to no covering. Also, relative humidities in those treatments were higher than those in P.E. and no covering. The row covering and perforated film enhanced plant growth. Broccoli grew best and abnormal head appeared the least with row covering treatment. Days taken for head formation, however, did not differ between treatments but the weight of curd was over 400 g in the treatment of row covering and perforated film covering. Marketable yield doubled under row covering as compared to no covering. The first harvest time was earlier by two weeks in row-covering. The results of this experiment indicated that covering row-cover film in spring cultivation was effective fer not only yield increase but also quality evaluation in early production of broccoli.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.4
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• pp.543-548
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• 2018

Ferroelectric $Bi_4Ti_3O_{12}$ films were deposited on $SrTiO_3(100)$ and Si(100) substrate by using conductive $SrRuO_3$ films as underlayer, and their ferroelectric and electrical properties were investigated depending on crystal structure and orientation. C-axis oriented $Bi_4Ti_3O_{12}$ films were grown on well lattice-matched pseudo-cubic $SrRuO_3$ films deposited on $SrTiO_3(100)$ substrate, while random-oriented polycrystalline $Bi_4Ti_3O_{12}$ films were grown on $SrRuO_3$ films deposited on Si(100) substrate. The random-oriented polycrystalline film showed a good ferroelectric hysteresis property with remanent polarization ($P_r$) of $9.4{\mu}C/cm^2$ and coercive field ($E_c$) of 84.9 kV/cm, while the c-axis oriented film showed $P_r=0.64{\mu}C/cm^2$ and $E_c=47kV/cm$ in polarizaion vs electric field curve. The c-axis oriented $Bi_4Ti_3O_{12}$ film showed a dielectric constant of about 150 and lower thickness dependence in dielectric constant compared to the random-oriented film. Furthermore, the c-axis oriented $Bi_4Ti_3O_{12}$ film showed leakage current lower than that of the polycrystalline film. The difference of ferroelectric properties in two films was explained from the viewpoint of depolarization effect due to orientation of spontaneous polarization and layered crystal structure of bismuth-base ferroelectric oxide.

• Transactions on Electrical and Electronic Materials
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• v.9 no.2
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• pp.67-72
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• 2008

Al-doped p-type ZnO thin films were fabricated by RF magnetron sputtering on n-Si (100) and homo-buffer layers in pure oxygen ambient. ZnO ceramic mixed with 2 wt% $Al_2O_3$ was selected as a sputtering target. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are arranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-2}$, mobilities from 0.194 to $198\;cm^2V{-1}s^{-1}$ and resistivities from 0.0963 to $18.4\;{\Omega}cm$. FESEM cross section images of different parts of a p-type ZnO:Al thin film annealed at $800^{\circ}C$ show a compact structure. Measurement for same sample shows that density is $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. Photoluminescence (PL) spectra at 10 K show a shoulder peak of p-type ZnO film at about 3.117 eV which is ascribed to electron transition from donor level to acceptor level (DAP).

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.371-377
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• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.432-433
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• 2012

Polymer solar cells are fabricated using electrospray (e-spray) deposition process. It shows comparable performance with reference devices, and has different characteristics according to the thickness of the active layer: In the case of the devices with higher fill factor, it shows relatively lower current density, and vice versa. These films are characterized by atomic force microscopy measurement. The results indicate that the comparable power conversion efficiency made by e-spray results from the 'solvent annealing effect' by process conditions and the different thin film property is caused by the degree of self-organization of the polymer.

• Journal of the East Asian Society of Dietary Life
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• v.10 no.4
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• pp.288-297
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• 2000

To understand the effect of radish on growth of food born microorganisms, mashedflesh radishes were extracted by using acetone and distilled water. Their effect was assayed by measuring the optical density of cultural broth of food born microorganisms. In the experiment, seven strains of yeast were used as the test organism. Acetone extract inhibited growth of the cells of L. plantarum, L. sake and Danmuji film yeast. Growth of the film yeast was drastically inhibited in the concomitant presence of 0.03% extract, while other microbes such as L. faecalis, P. pentosaceus, B/ subtilis and E. coli grew by succeeding cultivation for 4 to 8 hour after addition of the extract. Water extract, on contrast to acetone extract, at he concentrations of 0.1∼1.5% stimulated the growth of lactic acid bacteria. Culture of L. faecalis and L. sake showed an optical density higher than that of control by 40∼50 times. The effect was not so apparent against E. coli, S. aureus and Danmuji film yeast.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.5 no.2
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• pp.9-16
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• 1999

Edible films were prepared from proteins extracted from soybean curd residue by alkaline extraction and isoelectric precipitation. Effects of film forming solution pH and plasticizers on mechanical and barrier properties of edible films were studied. films were formed within pH $7{\sim}11$ with tensile strength (TS) of $2.9{\sim}3.3$ MPa. Films produced under pH 10 had the highest TS and Elongation (E) (3.3 MPa and 60.1%) but no significant difference was observed among water vapor permeabilities (WVP) of film. Glycerol, sorbitol and its mixture (1:1, w/w) were added as plasticizers. The concentration and mixing ratio of plasticizers also affected the TS, E and WVP of films. TS of films decreased from 15.0 MPa to 2.9 MPa as plasticizer concentration increased from 0.4 to 0.8 g plasticizer/g protein. At a plasticizer concentration, the highest TS was observed when sorbitol was used whereas the highest E was measured when mixture of glycerol and sorbitol was used as plasticizer WVP of films increased as the plasticizer concentration increased. Films plasticized with glycerol showed the highest WVP among the films with the same plasticizer concentrations. Edible films prepared from soybean curd residue protein showed very low oxygen permeabilities ($29.5{\sim}61.1aL{\cdot}m/m^2{\cdot}s{\cdot}Pa$) and oil resistance at all plasticizer concentration level tested.

• The Journal of Korean Society for Radiation Therapy
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• v.21 no.1
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• pp.1-7
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• 2009

Purpose: The purpose is to evaluate the accuracy of correcting the targeting error through the Target Location System (TLS) for the location change error of the reference point which arises from the movement or motion of patient during the treatment using the CyberKnife. Materials and Methods: In this test, Gafchromic MD-55 film was inserted into the head and neck phantom to analyze the accuracy of the targeting, and then the 6 MV X-ray of CyberKnife (CyberKnife Robotic Radiosurgery System G4, Accuray, US) was irradiated. End to End (E2E) program was used to analyze the accuracy of targeting, which is provided by Accuray Corporation. To compute the error of the targeting, the test was carried out with the films that were irradiated 12 times by maintaining the distance within the rage of $0{\pm}0.2\;mm$ toward x, y, z from the reference point and maintaining the angle within the rage of $0{\pm}0.2^{\circ}$ toward roll, pitch, yaw, and then with the films which were irradiated 6 times by applying intentional movement. And the correlation in the average value of the reference film and the test film were analyzed through independent samples t-test. In addition, the consistency of dose distribution through gamma-index method (dose difference: 3%) was quantified, compared, and analyzed by varying the distance to agreement (DTA) to 1 mm, 1.5 mm, 2 mm, respectively. Results: E2E test result indicated that the average error of the reference film was 0.405 mm and the standard deviation was 0.069 mm. The average error of the test film was 0.413 mm with the standard deviation of 0.121 mm. The result of independent sampling t-test for both averages showed that the significant probability was P=0.836 (confidence level: 95%). Besides, by comparing the consistency of dose distribution of DTA through 1 mm, 1.5 mm, 2 mm, it was found that the average dose distribution of axial film was 95.04%, 97.56%, 98.13%, respectively in 3,314 locations of the reference film, consistent with the average dose distribution of sagittal film that was 95.47%, 97.68%, 98.47%, respectively. By comparing with the test film, it was found that the average dose distribution of axial film was 96.38%, 97.57%, 98.04%, respectively, at 3,323 locations, consistent with the average dose distribution of sagittal film which was 95.50%, 97.87%, 98.36%, respectively. Conclusion: Robotic CyberKnife traces and complements in real time the error in the location change of the reference point caused by the motion or movement of patient during the treatment and provides the accuracy with the consistency of over 95% dose distribution and the targeting error below 1 mm.