• Proceedings of the KIEE Conference
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• 2009.04b
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• pp.256-258
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• 2009

현재 상용화되어 있는 결정질 태양전지의 경우 높은 실리콘 가격으로 인해 저가격화에 어려움을 격고 있다. 따라서 태양전지 저가화의 한 방법으로 박막태양전지가 주목을 받고 있다. P-I-N 구조의 박막태양전지에서 각 층의 thickness, activation energy, energy bandgap은 고효율 달성을 위한 중요한 요소이다. 본 논문에서는 박막태양전지 p-layer의 가변을 통하여 고효율을 달성하기 위한 simulation을 수행하였다. 가변 조건으로는 thickness $5\sim25nm$, activation energy $0.3\sim0.6$ eV 그리고 energy bandgap $1.6\sim1.8$ eV까지 단계별로 변화시켰다. 최종 simulation 결과 p-layer의 thickness 5nm, activation energy 0.3 eV 그리고 energy bandgap 1.8 eV에서 최고 효율 11.08%를 달성하였다.

• Corrosion Science and Technology
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• v.2 no.1
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• pp.7-11
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• 2003

Photoelectrochemical response and electrochemical impedance behavior was investigated for passive film formed on sputter-deposited Cr alloy in $0.1kmol{\cdot}m^{-3}$. Photoelectrochemical action spectrum could be separated into two components, which were considered to be derived from $Cr_2O_3$ ($E_g\sim3.6eV$) and $ Cr(OH)_3 $ ($E_g\sim2.5eV$). The band gap energy, $E_g$, of each component was almost constant for various applied potentials. polarization periods and alloying additives. The photoelectrochemical response showed negative photo current for most potentials in the passive region. Therefore, the photo current apparently exhibited p-typesemiconductor behavior. On the other hand, Mort-Schottky plot of the capacitance showed positive slope, which means that passive film formed on Cr alloy has n-type semiconductor property. These apparently conflicting results are rationally explained assuming that the passive film on Cr alloy formed in the acid solution has n-type semiconductor property with a fairly deep donor level in the band gap and forms an accumulation layer in the most of potential region in the passive state.

• Journal of the Korean Solar Energy Society
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• v.38 no.1
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• pp.25-36
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• 2018

The stoichiometric mixture of evaporating materials for the $CaAl_2Se_4$: Co single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CaAl_2Se_4$, it was found orthorhomic structure whose lattice constant $a_0$, $b_0$ and $c_0$ were 6.4818, $11.1310{\AA}$ and $11.2443{\AA}$, respectively. To obtain the $CaAl_2Se_4$: Co single crystal thin film, $CaAl_2Se_4$: Co mixed crystal was deposited on throughly etched Si (100) by the HWE (Hot Wall Epitaxy) system. The source and substrate temperature were $600^{\circ}C$ and $440^{\circ}C$ respectively. The crystalline structure of $CaAl_2Se_4$: Co single crystal thin film was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CaAl_2Se_4$: Co obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.8239eV-(4.9823{\times}10^{-3}eV/K)T_2/(T+559K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $p-Si/p-CaAl_2Se_4$: Co heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.42 V, $25.3mA/cm^2$, 0.75 and 9.96%, respectively.

• Bulletin of the Korean Chemical Society
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• v.29 no.5
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• pp.1048-1050
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• 2008

Electric current flow was observed through imogolite film when imogolite ($(HO)_3Al_2O_3SiOH$) was exposed to water molecules and connected to external electrodes. Current flow was due to the bound water on the surface of imogolite. Current flow increased as the pH of the water decreased. The current-voltage (I-V) measurements from a field effective transistor (FET) using $H_2O$/imogolite film revealed that the current carrier in $H_2O$/ imogolite had p-type characteristics, i.e. the carrier was probably $H^+$. The possible mechanism for current transportation in imogolite/water was also suggested in this paper.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.31 no.1
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• pp.84-90
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• 1986

An experiment was conducted to know the effects of planting dates (March 5, 15, and 25 and April 4) and transparent polyethylene (P.E.) film treatments(tunnel, tunnel slit, and mulch) on air and soil temperatures and growth and yield of a sweet corn variety, Great Bell. Maximum air and soil temperatures and minimum air and soil temperatures were greater at tunnel>tunnel slit>mulch in that order. Differences in maximum air and soil temperatures among the P.E. film treatments were much greater than those in minimum air and soil temperatures. However, when film was opened due to high air temperature over 40$^{\circ}C$ in the tunnel, air temperature was similar but soil temperature was lower com-pared to mulch. High temperature stress could be avoided in tunnel slit without opening film by increase in the number of slits. Cold damage of corn seedlings was avoided by tunnel and reduced by tunnel slit, and frost-damaged seedlings under the mulch were recovered in few days. The number of days from planting to silking was reduced as planting date delayed. At early plantings, tunnel enhanced early growth and silking, but it delayed at late plantings because tunnel was opened during the most of day time due to high temperature. Black streaked dwarf virus(BSDV) disease was more severe at early plantings and it was reduced in tunnel slit at late plantings because plants were grown under the film at the time of infection. The number of marketable ears was similar among all treatments except mulch at March 5 planting where BSDV was severely infected. Gross income was high in tunnel and tunnel slit at March 25 planting which had more larger marketbale ears and tunnel and tunnel slit at March 5 planting which had higher market price.

• Microbiology and Biotechnology Letters
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• v.23 no.6
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• pp.702-709
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• 1995

Degradation Of $\kappa $-carrageenan-based film by microorganisms screened from carrageenan source and activated sludge of a carrageenan producing factory was investigated by measuring changes of pH, viscosity, total sugar and total organic carbon (TOC) of the medium containing $\kappa $-carrageenan as a carbon source. Initially fifteen strains of microorganism were isolated from carrageenan source and activated sludge and then three organisms among them were selected based on the ability of growing in the medium including 0.3% $\kappa $-carrageenan as a sole carbon source. They were identified as Escherichia coli, Saccharomyces cerevisiae and Aspergillus niger. As indices of biodegradability Of $\kappa $-carrageenan based film, the changes of pH, viscosity, total sugar, and TOC of the carrageenan film-based medium were tested by the cultivation of single or mixed strains of the identified organisms. Mixed culture showed the highest biodegradability, which resulted in the changes of pH from 6.5 to 3.0, viscosity from 164 cps to 15.6 cps, total sugar content from 2.35 g/l to 0.53 g/l and TOC from 5721 ppm to 232 ppm after 30 days of cultivation. The biodegradability determined as the reduction rate of TOC by pure cultures of Asp. niger, E. coli, Sacch. cerevisiae and mixed culture of the three organisms were 94%, 86%, 80% and 96%, respectively.

• Korean Journal of Soil Science and Fertilizer
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• v.49 no.6
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• pp.789-794
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• 2016

Continuous excessive application of phosphorus (P) fertilizer and manure in plastic film house soils can lead to an accumulation of P in soils. The understanding of P sorption by soils is important for fertilizer management. In this study, 9 samples were collected for acidic and calcareous soils as non-cultivated soil and plastic film house soils as cultivated soil Phosphorus sorption data of acidic soils fit the Langmuir equations, Freundlich equations in calcareous and plastic film house soils. In calcareous and plastic film house soils, the slope of isotherm adsorption changed abruptly, which could be caused P precipitation with $CaCO_3$. The calculated Langmuir adsorption maximum ($S_{max}$) varied from 217 to 1,250, 139 to 1,429, and $714mg\;kg^{-1}$ for acidic soils, calcareous soils, and plastic film house soils with low available phosphate concentration, respectively. From this result, maximum P adsorption by the Langmuir equation could be regarded as threshold of P concentration to induce the phosphate precipitation in soil. Phosphate-sorption values estimated from one-point isotherm for acidic and calcareous soils as non-cultivated soils were comparable with the $S_{max}$ values calculated from the Langmuir isotherm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.983-989
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• 2005

[ $PZT(Pb(Zr,Ti)O_3)$ ] thin films were deposited by multi-target reactive sputtering method on $RuO_2$ substrates. Pure perovskite phase PZT films could be obtained by introducing Ti-oxide seed layer on the $RuO_2$ substrates prior to PZT film deposition. The PZT films deposited on the $RuO_2$ substrates showed highly voltage-shifted hysteresis loop compared with the films deposited on the Pt substrates. The surface of $RuO_2$ substrate was found to be reduced to metallic Ru in vacuum at elevated temperature, which caused the formation of oxygen vacancies at the initial stage of PZT film deposition and gave rise to the voltage shift in the P-E hysteresis loop of the PZT capacitor. The fatigue characteristics of the PZT capacitors under unipolar wane electric field were different from those under bipolar wane. The fatigue test under unipolar wane showed the increase of polarization. It was thought that the ferroelectric domains which had been pinned by charged defects such as oxygen vacancies and the charged defects were reduced in number by combining with the electrons injected from the electrode under unipolar wave, resulting in the relaxation of the ferroelectric domains and the increase of polarization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.419-420
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• 2008

In this study, high quality (Al,N)-codoped p-type ZnO thin films were obtained by DC magnetron sputtering. The film on buffer layer grown in 80% $N_2$ ambient shows highest hole concentration of $2.93\times10^{17}cm^{-3}$. The films show hole concentration in the range of $1.5\times10^{15}$ to $2.93\times10^{17}cm^{-3}$, resistivity of 131.2 to 2.864 $\Omega$cm, mobility of 3.99 to 31.6 $cm^2V^{-1}s^{-1}$. The films on Si show easier p-doping in ZnO than those on buffer layer. The film on Si shows the highest quality of optical photoluminescence (PL) characteristics. The donor energy level $(E_d)$ of (Al,N)-codoped ZnO films is about 50 meV and acceptor energy level $(E_a)$ is in the range of 63 to 71 meV. It will help to improve p-type ZnO films.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.89-92
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• 2009

High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of $1.5{\times}10^{15}{\sim}2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2${\sim}$2.864 ${\Omega}cm$, mobility in the range of 3.99${\sim}$31.6 $cm^2V^{-1}s^{-l}$, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth $(E_d)$ of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth $(E_a)$ was reduced to 63 meV.