• Korean Journal of Weed Science
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• v.5 no.2
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• pp.202-210
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• 1985

Requirements in weed control in a mulberry field are much similar to those in orchards, but also feature a longer period of weed control of various kinds of persistent weeds, i.e., spring, summer, and winter annuals as well as perennials. In addition the mulberry tree is relatively more sensitive to herbicide injury. Hence, very few herbicides have been used in mulberry field. The present study was conducted to evaluate the usefulness of oxyfluorfen in comparison with alachlor and simazine, which are registered for ordinary mulberry field in Korea, for weed control efficacy in the new, rapidly increasing practice of transparent polyethylene-film mulched and densely planted younger mulberry culture. Dominant spring weeds were Galium spp., Erigeron spp., Polygonum senticosum, and Chenopodium spp. in the non-mulched interbed area in contrast to the Digitaria spp. and Potulaca spp, under mulch. Dominant summer weeds were Digitaria spp., Portulaca spp., Erigeron spp., Artemisia spp. and Calystegia japonica in the non-mulched interbed area while weeds did not occur significantly during summer under mulch which were shaded by vigorously growing mulberry trees. The weeds occurred under mulch in spring reduced shoot growth of young mulberry tree resulting in the reduced yield of mulberry leaves for silkworms. The weeds occurred in the interbed area did not affect until May, but interfered later summer- and fall-growth of mulberry tree. Early single spring application of alachlor(EC), simazine(WP) or oxyfluorfen(EC) at a rate of 650 g, 750 g or 350 g ai per ha, respectively, controlled most annuals satisfactorily to fall in the mulched bed area. In the nonmulched interbed area, however, thrice does of alchlor or simazine was necessary for satisfactory control of spring weeds, followed by summer application of alachlor or simazine at twice dose level as tank mixture with paraquat at 490 g ai per ha for satisfactory control of summer to fall weeds. Single spring application of oxyfluorfen at a rate of 1400 g ai per ha was persistently effective to control satisfactorily even summer and fall weeds. However, heavy rainfall splashed soil borne oxyfluorfen to the lower branch leaves causing some leaf burns. Spring application of oxyfluorfen at a rate of 350 g ai per ha followed by summer application of oxyfluorfen and paraquat tank mixture (350 g ai + 490 g ai) was the best choice for the non-mulched interbed area weed control among the treatments.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.158-158
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• 2011

$Cu(In_xGa_{1-x})Se_2$ (CIGS) thin film solar cell is one of the most promising solar cells in photovoltaic devices. CIGS has a direct band gap which varied from 1.0 to 1.26 eV, depending on the Ga to In ratio. Also, CIGS has been studying for an absorber in thin film solar cells due to their highest absorption coefficient which is $1{\times}10^5cm^{-1}$ and good stability for deposition process at high temperature of $450{\sim}590^{\circ}C$. Currently, the highest efficiency of CIGS thin film solar cell is approximately 20.3%, which is closely approaching to the efficiency of poly-silicon solar cell. The deposition technique is one of the most important points in preparing CIGS thin film solar cells. Among the various deposition techniques, the sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have been prepared by rf magnetron sputtering method using a single target. The optical and structural properties of CIGS films are generally dependent on deposition parameters. Therefore, we will explore the influence of deposition power on the properties of CIGS films and the films will be deposited by rf magnetron sputtering using CIGS single target on Mo coated soda lime glass at $500^{\circ}C$. The thickness of CIGS films will be measured by Tencor-P1 profiler. The optical properties will be measured by UV-visible spectroscopy. The crystal structure will be analyzed using X-ray diffraction (XRD). Finally the optimal deposition conditions for CIGS thin films will be developed.

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.829-834
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• 2002

Ferroelectric properties of $ErMnO_3$ thin films deposited on Si(100) substrate using Sol-gel process with metal salts were investigated. $ErMnO_3$ thin films with a (001) preferred orientation were crystallized at 800$^{\circ}C$. The $ErMnO_3$ thin film post-annealed at 800$^{\circ}C$ for 1 h showed the dielectric constant(k) of 26 and the dielectric loss(tan ${\delta}$) of 0.032 at the frequency range from 1 to 100 KHz. The grain size of $ErMnO_3$ thin film post-annealed at 800 for 1 h was 10∼30 nm. The remanent polarization($P_r$) of the $ErMnO_3$ thin films increased with increasing (001) preferred orientation. The $ErMnO_3$ thin films post-annealed at 800$^{\circ}C$ for 1 h showed the remanent polarization($P_r$) of 400 nC/$cm^2$, with the increase of post-annealing time at 800$^{\circ}C$, the coercive field($E_c$) of thin films was lowered because the dense and homogeneous thin films were obtained.

• Korean Journal of Food Science and Technology
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• v.7 no.3
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• pp.128-134
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• 1975

For development of long-term storage method of sweet-persimmons using polyethylene film bags, basic experiment was conducted with 30 boxes of sweet-persimmons in 1973 and the same experiment was extended for industrial application with 2,500 boxes of the persimmons in the cold storage of Jinyoung Sweet-persimmon Association in 1974. Investigation was made on change of the quality by storage period. At the same time, persimmons put in the cold storage test were shipped to market at different time in order to monitor consumer response and commercial feasibility. The followings are conclusion obtained from the result of this experiment. 1. Storage of sweet-persimmon, Buyu, produced in Jinyoung, Kimhae was possible for 1 month at $2^{\circ}C{\pm}1^{\circ}C$ cold storage. This storage period was extended to 4 months until the end of February in case that the fruits were hermetically sealed in P.E. film bags of 0.08 to 0.1 mm thickness. 2. During the storage period of sweet-persimmons packed in the film bags, the loss of weight due to evaporation was effectively prevented with use of the film of bag thicker than 0.04 mm. 3. The storage ability of 3-5 persimmons per small bag was somewhat superior to that of many persimmons packed in the large box of 15kg capacity. 4. The thicker the film of bags, the more $CO_2$ gas was accumulated inside, however, from 1 month after beginning of the storage the rate of $CO_2$ accumulation became very low maintaining the stabilized level of 5-6% at the plot of 0.06-0.08mm thick bags. 5. While the persimmons were in storage, decreased was the content of total sugars, total acids, and vitamin C, of which the phenomenon was remarkable especially with the fruits of non-packed plot. 6. The sweet-persimmons in the film bags subjected to cold storage when shipped to market in their intact condition were more beneficial than when they were shipped out in unpacked condition. The intact fruits packed in the P.E. film bags were able to keep their commercial value for 10days in the outdoor situation. 7. The sweet-persimmons that were packed in the film bags and put in the cold storage had maintained promissing marketability and the economic feasibility was acknowledged when the experimental practice was applied to industrial scale.

• Macromolecular Research
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• v.10 no.2
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• pp.75-79
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• 2002

Organic materials have considerable attention as active semiconductors for device applications such as thin-film transistors (TFTs) and diodes. Pentacene is a p-type organic semiconducting material investigated for TFTs. In this paper, we reported the morphological and electrical characteristics of pentacene TFT films. The pentacene transistors showed the mobility of 0.8 $\textrm{cm}^2$/Vs and the grains larger than 1 ${\mu}{\textrm}{m}$. Deep-level transient spectroscopy (DLTS) measurements were carried out on metal/insulator/organic semiconductor structure devices that had a depletion region at the insulator/organic-semiconductor interface. The duration of the capacitance transient in DLTS signals was several ten of seconds in the pentacene, which was longer than that of inorganic semiconductors such as Si. Based on the DLTS characteristics, the energy levels of hole and electron traps for the pentacene films were approximately 0.24, 1.08, and 0.31 eV above Ev, and 0.69 eV below Ec.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1631-1633
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• 2008

We demonstrate 4-in QVGA active-matrix electrophoretic display based on ink-jet printed organic transistors on glass substrates. Our TFT array had a bottom-gate, bottom-contact device architecture. The organic semiconductor and gate dielectric were solution processed. The field-effect mobility of the printed devices, calculated in the saturation region, was $0.1{\sim}0.3cm^2/Vs$ at Vg=-20 V.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.44-44
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• 1998

It was observed that the friction coefficient decreased with increasing Si concentration in the l ilms. Furthermore, the friction behavior became more s때ble even when very small amount of S Si of less than 0.5 at. % was incorporatA:회 By analyzing the composition of the debris f formed, we could show that the low and stabilized friction coefficient is in마nately relatA:었 w with the formation of the Si rich oxide debris. These result supports the mechanism that the h hydrated silica debris is the reason for low friction coefficient in humid environment. Second e evidence of the role of Si rich oxide debris could be found in the triOO-chemical reactions d during initial stage of triho-test. When the Si concen$\sigma$ation was less than 5 at.%, initial t transient period of high friction coefficient was commonly observed. Mter the transient period, m the friction coefficient becomes lower with increasing contact cycles. The initial $\sigma$ansient p peri여 becomes shorter and the starting and maximum friction coefficients in $\sigma$ansient 야,riod d decreased with increasing Si concentration. Composition of the debris on the wear scar s surface was analyzed by Auger spe따'Oscopy at v뼈ous stages in the initial transient period. W We observed that when the friction coefficient increased in earlier stage of the $\sigma$'ansient p period, iron and oxygen was observed in the debris. However, decrease in the 당iction c coefficient in the later stage of the transient period was associated with the formation of s silicon rich oxide debris. This result also supports the friction mechanism of Si-DLC films t that the formation of Si rich oxide debris results in low friction coefficient in ambient a atmosphere. atmosphere.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.174-174
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• 2008

Non-volatile memories using ferroelectric-gate field-effect transistors (Fe-FETs) with a metal/ferroelectric/semiconductor gate stack (MFS-FETs) make non-destructive read operation possible. In addition, they also have features such as high switching speed, non-volatility, radiation tolerance, and high density. However, the interface reaction between ferroelectric materials and Si substrates, i.e. generation of mobile ions and short retention, make it difficult to obtain a good ferroelectric/Si interface in an MFS-FET's gate. To overcome these difficulties, Fe-FETs with a metal/ferroelectric/insulator/semiconductor gate stack (MFIS-FETs) have been proposed, where insulator as a buffer layer is inserted between ferroelectric materials and Si substrates. We prepared $SrBi_2Ta_2O_9$ (SBT) film as a ferroelectric layer and $LaZrO_x$ (LZO) film as a buffer layer on p-type (100) silicon wafer for making the MFIS-FET devices. For definition of source and drain region, phosphosilicate glass (PSG) thin film was used as a doping source of phosphorus (P). Ultimately, the n-channel ferroelectric-gate FET using the SBT/LZO/Si Structure is fabricated. To examine the ferroelectric effect of the fabricated Fe-FETs, drain current ($I_d$) versus gate voltage ($V_g$) characteristics in logarithmic scale was measured. Also, drain current ($I_d$) versus drain voltage ($V_d$) characteristics of the fabricated SBT/LZO/Si MFIS-FETs was measured according to the gate voltage variation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.420-423
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• 2003

[ $TiO_2$ ] thin films were fabricated by DC magnetron sputtering system at by controlling deposition times, ratios of $Ar:O_2$ partial presser ratio and substrate conditions. And the surface, cross-section morphology, microstructure, and composition ratio of the films were analyzed by FE-SEM, TEM and XPS. Besides, the optical absorption and transmittance of the $TiO_2$ films were measured by a UV-VIS-NIR Spectrophotometer, and photocatalytic properties were studied by G C Analyzer & Data Analysis system. As the result, when $TiO_2$ thin film was made at deposition time of 120[min] and $Ar:O_2$ ratio of 60:40, the best structural and optical properties among many thin films could be accepted. The best results of properties were as follows: thickness; $360{\sim}370[nm]$, grain size; 40[m], gap between two peak binding energy, $5.8{\pm}0.05[eV]$ ($2p_{3/2}$ peak and $2p_{1/2}$ peak of Ti was show at $458.3{\pm}0.05[eV]$ and $464.1{\pm}0.05[eV]$ respectively), binding energy; $530{\pm}0.05\;[eV]$, opticalenergy band gap; 3.4[eV].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.154-157
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• 2003

$TiO_2$ thin films were fabricated by RF magnetron sputtering system at by controlling deposition times, ratios of $Ar:O_2$ partial presser ratio and substrate conditions. And the surface, cross-section morphology, microstructure, and composition ratio of the films were analyzed by FE-SEM, TEM and XPS. Besides, the optical absorption and transmittance of the $TiO_2$ films were measured by a UV-VIS-NIR Spectrophotometer, and photocatalytic properties were studied by G${\cdot}$C Analyzer & Data Analysis system. As the result, when $TiO_2$ thin film was made at deposition time of 120[min] and $Ar:O_2$ ratio of 60:40, the best structural and optical properties among many thin films could be accepted. The best results of properties were as follows: thickness; 360~370[nm), grain size; 40[nm], gap between two peak binding energy; $5.8{\pm}0.05[eV]$ ($2_{p3/2}$ peak and $2_{p1/2}$ peak of Ti was show at $458.3{\pm}0.05[eV]$ and $464.1{\pm}0.05[eV]$ respectively), binding energy; $530{\pm}0.05[eV]$, optical energy band gap; 3.4[eV].