• Biotechnology and Bioprocess Engineering:BBE
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• v.2 no.2
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• pp.122-125
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• 1997

The utilization of excess whey is necessary to reduce dairy waste because the large amount of whey disposal in waste streams has caused environmental problems. During whey protein film production as the effective means of utilization of excess whey, we have examined the effects of pH, temperature, and plasticizers for water vapor permeability(WVP), tensile strength(TS), and elongation rate(%E) of the whey protein films. The 10% whey protein films had the highest WVP(28.73g$.$mm/kPa$.$day$.$㎡) and TS(1.85${\pm}$0.11Mpa). But, in this case, an increase of WVP was caused by the thickness of whey protein films. At the concentration of 8% whey protein, appropriate thickness was obtained. Whey protein films prepared at the pH 6.75 and 95$^{\circ}C$ showed lower WVP(28.38g$.$mm/kPa$.$day$.$㎡) and elongation rate(12.9%) and higher TS value(3.769${\pm}$0.407 MPa) than at the pH 6.75 and 75$^{\circ}C$. As the temperature increased, WVP of films decreased slightly and tensile strength increased slightly, while elongation rate decreased significantly. Higher WVP and TS were observed at pH6.75 compared to pH7-9. In contrast, significantly higher elongation was observed at pH 9comapred to pH6.75-8. Among the plasticizer types used, the addition of sorbitol showed the highest TS value(6.244${\pm}$0.297 MPa) at the concentration 0.4g sorbitol and elongation rate(49%) at the concentration of 0.6g sorbitol.

• Proceedings of the Korean Society of Crop Science Conference
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• 1988.07a
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• pp.26-27
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• 1988

• 한국약용작물학회:학술대회논문집
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• 2010.10a
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• pp.201-202
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• 2010

• Proceedings of the Korean Society of Crop Science Conference
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• 1992.05a
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• pp.66-67
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• 1992

• Proceedings of the Korean Society for Bio-Environment Control Conference
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• 2000.10a
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• pp.124-127
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• 2000

• Proceedings of the Korean Society of Crop Science Conference
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• 1994.10a
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• pp.72-73
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• 1994

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.39-42
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• 1995

In this study, PLZT thin films prepared by Sol-Gel method were deposited on ITO glass by spin coating and cryatallized at 750$^{\circ}C$ for 5 min by RTA in oreder to investigate their electrical and optical properties. Although thin film experieneced narrowing their hysteresis loops with increasing La content, E$\sub$c/ and P.sub r/ were higher for thin film than for bulk materials. $\varepsilon$$\sub$r/ and optical transmittance increased with increasing La content.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.464-471
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• 1995

메그네트론 스퍼터링으로 제작한 고밀도 다층박막($Co_75{{Pt_12}{Cr_13}}$합금) 디스크를 투과전자현미경을 이용해 단면 및 평면의 미세조직의 조사 혹은 미소부위 성분분석을 할 경우, 선행되어야하는 시편준비 경로와 각 단계별 구체적방법 및 그 효과를 연구하였다. Ion밀링시간이 증가함에 따라 시료가 얇게 되는과정에서 스퍼터링된 물질이 관찰될 시편부위의 다른 표면에 증착되므로써 미세조직의 선명도를 해칠 수 있고, 이로인한 해석상의 오류가능성이 시사되었다. 또한, 자기박막 디스크와 같이 다층으로 구성된 단면분석용 시료에서는 서로 맞붙인 실리콘 단결정 접착면을 따라 밀링속도가 선택적으로 커서 우선축이 생김으로써 양질의 시편을 얻기 어려운 문제점이 제기되었다. 이같은 문제를 포함한 전자현미경 시료준비과정에서 생길 수 있는 문제를 해결할 수 있는 실마리와 이를 이용해 수행한 전자현미경 분석결과 및 효과적인 시편준비방법이 본 논문에서 언급되었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.605-608
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• 2006

The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above $10^6$ are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80 %, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around $25\;cm^2/Vs$, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.56-59
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• 2003

Wurtzite GaN films are grown by low-pressure MOCVD on (0001)-plane sapphire substrates. The GaN films have a total thickness of 4 $\mu$m with a surface Mg-doped p-type layer, which has a thickness of 0.5 $\mu$m. 90k eV $Mn^{+}$ ions are implanted into the GaN films at room temperature with doses ranging from $1 \times10^{15}$ to $1 \times 10^{16}\textrm{cm}^{-2}$. After an annealing step at $770^{\circ}C$ in flowing $N_2$, the structural characteristics of the $Mn^{+}$ implanted GaN films are studied by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and atomic force microscopy (AFM). The structural and morphological changes brought about by $Mn^{+}$ implantation and annealing are characterized.