• Journal of Life Science
• /
• v.13 no.4
• /
• pp.498-504
• /
• 2003

This Study was carried out to investigate the optimal mycelial growth of Pholiota nameko. The optimal medium for the mycelial growth was ME medium. The optimal temperature and pH were $25^{\circ}C$$\pm$1 and 5.5, respectively. The modified optimal medium compositions were glucose 3% (w/v), malt extract 0.25% (w/v), yeast extract 0.25% (w/v), $KH_2PO_4$ 0.046% (w/v), $K_2HPO_4$ 0.1% (w/v), $MgSO_4$ㆍ$7H_2O$ 0.05% (w/v). From the result of experiments on the optimal temperature, pH and nutritional requirements, the mycelial growth of modified optimal medium was higher than that of ME medium.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1619-1622
• /
• 2001

Recently many researches on the diagnosis of stator winding insulation for large rotating machines have been developed sine the 1970s. Capacitive coupler has been the most widely used sensor for on-line partial discharge(PD) in rotating machines. The 105 [pF] ceramic coupler(CC) has been developed to continuously measure the PD activity in operating motor stator windings. This paper presents frequency characteristics and laboratory test to compare traditional 80 [pF] epoxy-mica coupler(EMC) and 105 [pF] CC for PD measurement in 6.6 [kV] stator windings.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.4
• /
• pp.210-213
• /
• 2017

In this paper, we analyzed the structural design and electrical characteristics of a 3.3 kV super junction FS IGBT as a next generation power device. The device parameters were extracted by design and process simulation. To obtain optimal breakdown voltage, we researched the breakdown characteristics. Initially, we confirmed that the breakdown voltage decreased as trench depth increased. We analyzed the breakdown voltage according to p pillar dose. As a result of the experiment, we confirmed that the breakdown voltage increased as p pillar dose increased. To obtain more than 3.3 kV, the p pillar dose was $5{\times}10^{13}cm^{-2}$, and the epi layer resistance was $140{\Omega}$. We extracted design and process parameters considering the on state voltage drop.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.14 no.1
• /
• pp.22-29
• /
• 2000

This paper deals with the dielectric characteristics of $SF_6$ gas gap stressed by $\pm$1.2/44[$mutextrm{s}$] non-oscillating impulse and $\pm$0.4[$mutextrm{s}$]/1.14[MHz] oscillating impulse voltages in the presence of a needle-shape metallic particle in gas-insulated switchgear(GIS). Breakdown voltage-time (V-t) and breakdown voltage-gas pressure (V-p) characteristics were investigated and discussed. The experiments were carried out under highly inhomogeneous field geometry with a needle protrusion whose length and radius are 10[mm] and 0.5[mm], respectively. The gas pressure ranges from 0.1 to 0.5[㎫]. As a result, it was found that the electrical breakdown for both the positive and negative polarity develops with steplike pulses in leader mechanism, When subjected to the positive oscillating impulse voltage, the minimum breakdown voltages appeared in all the gas pressure ranges and the V-t curves have a pronounced upturning at short times to breakdown and give a little dependence of the gas pressure. On the other hand, in the case of the negative polarity the dependence of the V-t and V-p characteristics on the wave shape of the applied voltages is known to be appreciable.

• Journal of Practical Agriculture & Fisheries Research
• /
• v.20 no.2
• /
• pp.31-38
• /
• 2018

This study was conducted to investigate the possibility of biochar as an alternative medium to peatmoss using for Aster spathulifolius. We cultivated A. spathulifolius in four potting media with different mixing rates (v/v) of peatmoss (P) and biochar (B) as follows: B0+P3, B1+P2, B2+P1, and B3+P0 with vermiculite 3 + perlite 3. Also, we analyzed the chemical properties of media and the plant growth characteristics. The results were as follows: In case of media's chemical condition, B0+P3 and B1+P2 treatments showed higher tendency (p < 0.05). Plant height on B0+P3 and B1+P2 treatments was much higher than that on other treatments (p < 0.05). Root length on B1+P2 treatment was higher than on B0+P3 treatment (p < 0.05). B0+P3 and B1+P2 treatments showed higher number of leaves and dry biomass than other treatments. Therefore, our results support that Biochar : Peatmoss : Vermiculite : Perlite (1/3 : 2/3 : 1 : 1, v/v) could be a more economical potting medium for A. spathulifolius than peatmoss : vermiculite : perlite (1 : 1 : 1, v/v).

• Journal of Sensor Science and Technology
• /
• v.16 no.4
• /
• pp.259-262
• /
• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.42 no.3 s.333
• /
• pp.17-24
• /
• 2005

We fabricated PIN-Photodiodes with a single mode fiber for analog communications and analyzed characteristics of the devices. The fabricated PIN-Photodiode shows a bandwidth of 1.5 GHz, a dark current of 20 p4 a capacitance of 0.48 pF, and the responsivity of 0.9 V/W, a second order distortion of -72 dBc. In this paper, we developed a new optical Packaging technology that is aligning in real-time monitoring of both responsivity and IM2 characteristics. As a result responsivity has been improved by 0.03 V/W, and also U has been improved by $3\~5\;dBc$. On the other hand, failure ratio has been reduced by $3.5\%$.

• Journal of IKEEE
• /
• v.28 no.2
• /
• pp.131-135
• /
• 2024

In this study, the sensor such as current transformer type was developed for measuring non-contact partial discharge in power electrical facilities, and the results of the characteristic evaluation were discussed. The frequency response characteristics of the HFCT sensor were shown to be measurable from 20 [kHz] to 20 [MHz]. The average sensitivity for the positive direction was 0.308 [mV/pC], and the negative direction was 0.459 [mV/pC]. Which showed that the sensitivity for the negative direction was better than that for the positive direction. The developed HFCT sensor is possible to measure very small partial discharge pulse signals and can be measured various types of partial discharge that may occur at power electrical facilities.

• Proceedings of the KIEE Conference
• /
• 1987.07a
• /
• pp.461-464
• /
• 1987

With the fabrication of Al-$Al_2O_3$-n(p) type Si devices, the analysis and measurement of various characteristics, this study presented the electric physical property theory for the charge distribution of MAS device $Al_2O_3$ films, and inquired out the devices available. In order to study them, Al-(450A)$Al_2O_3$-n(p) type Si was the main objects in the study. They were examined through carrier injection, C-V curves of devices on time, ${\Delta}V_{FB}$-t curves, I-V curves and $Al_2O_3$ film's breakdown characteristics.

• Journal of IKEEE
• /
• v.7 no.1 s.12
• /
• pp.1-8
• /
• 2003

In this study, the high performance BCD device structure which satisfies the high voltage and fast switching speed characteristics is devised. Through the process and device simulation, optimal process spec. & device spec. are designed. We adapt double buried layer structure, trench isolation process, n-/p-drift region formation and shallow junction technology to optimize an electrical property as mentioned above. This I.C consists of 20V level high voltage bipolar npn/pnp device, 60V level LDMOS device, a few Ampere level VDMOS, 20V level CMOS device and 5V level logic CMOS.