• 제목/요약/키워드: P-V Characteristics

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금이 도우핑된 P-I-N 다이오드의 전기적 및 광학적 스위칭 특성 (Electrical and Optical Switching Characteristics of Gold-Doped P-I-N Diodes)

  • 민남기;하동식;이성재
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 하계학술대회 논문집 C
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    • pp.1547-1549
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    • 1996
  • The electrical and optical switching characteristics of gold-doped silicon p-i-n diodes have been investigated. The device shows a dark switching voltage of about 500 V. The switching voltage decreases rapidly when the illumination level is increased. The differential sensitivity of optical gating over linear region is $d(V_{Th}/V_{Tho})/dP_{Ph}$=0.25/uW. The turn-on delay time and the turn-on rise time decrease with increasing optical pulse power. The turn-off delay and the fall time are negligible.

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A Comparison Analysis of Color Characteristics and Images in Flight Attendant Uniforms of Korea, China and Japan

  • Shao, Chiqian;Lee, Misuk
    • 패션비즈니스
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    • 제17권6호
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    • pp.111-124
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    • 2013
  • The purpose of this research was to conduct a comparison analysis of color in the characteristics and image of Korea/China/Japan airline uniforms. Research subjects for this research included 19 Korean, Chinese and Japanese airlines servicing the Incheon International Airport in South Korea. The analysis methods are based on the Munsell Color Order System and PCCS (Practical Color Coordinate System) tone classification in order to examine the color characteristics. For the color image analysis, the present research performed a positioning on Shigenobu Kobayashi's color images scale with adjectives in order to compare the resulting differences. As a result of the analysis, this research discovered the following; First, achromatic colors were found to be used most frequently in flight attendant uniforms of Korea/China/Japan. In Korean flight attendant uniforms, YR/Y, GY and B/PB/P; in Chinese, R/PB, RP, YR/Y/GY and BG/P; in Japanese, RP, R/P/PB and Y/BG were found in order. As for the main uniform colors, Korean flight attendant uniforms were found to be in the colors YR, and R/GY/B/P; Chinese flight attendant uniforms, R, PB, and P/B; and Japanese flight attendant uniforms, R, BG, B, RP and N. Second, Korean flight attendant uniforms used W and It most frequently; China flight attendant uniforms, W; and Japanese flight attendant uniforms, W and v. Regarding the main colors, Korean flight atteddant uniforms used lt/g and v/p; Chinese flight attendant uniforms, v, dp and s/d/dkg; and Japanese flight attendant uniforms, v/dkg and Bk. Third, after positioning each country's uniform color combination bars on the Kobayashi image scale, Korean flight attendant uniforms showed classic images along with casual/pretty/elegant/chic images; Chinese flight attendant uniforms displayed, casual images as well as, dynamic/gorgeous/chic/cool casual/dandy images; and finally, Japanese flight attendant uniforms converyed dandy images along with casual/gorgeous images. This research findings indicate that Korea/China/Japan airlines' flight attendant uniforms seek for differentiated image establishment by reflecting their own CIs and unique national cultures in the uniform color marketing.

경북 동해안 환경에서 분리된 V. parahaemolyticus 및 V. vulnificus의 생태학적 및 항생제 감수성 특성 (Environmental and Antimicrobial Characteristics of Vibrio spp. Isolated from Fish, Shellfish, Seawater and Brackish water samples in Gyeongbuk Eastern Coast)

  • 손진창;박승우;민경진
    • 한국환경보건학회지
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    • 제29권2호
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    • pp.94-102
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    • 2003
  • This study was carried out to investigated the distribution and characteristics of Vibrio spp. isolated from fish and shellfish, seawater and brackish water samples collected from Pohang, Uljin, Yeongduk and Gyeongju in Gyeongbuk Province from April 2000 to October 2000. Total 155 strains of genus Vibrio were isolated from 439 collected samples, and numbers of isolated strains of V. parahaemolyticus and V. vulnificus were 140 and 15, respectively. The isolation rate from the samples collected in Pohang was the highest as 41.5% (76 strains), and wat the highest as 71.4% (30 strains) in brackish water, and was the highest as 55.7% (34 strains) in August. And the optimal pH, temperature, and NaCl concentration for growth of V. parahaemolyticus and V. cholerae were 8.0, 3$0^{\circ}C$ and 2.0%, respectively. In a resistance test for environmental factors, heat and cold resistants of V. parahaemolyticus were higher than those of V. vulnificus, withstanding for 15 minutes at 6$0^{\circ}C$ and 6 days at -18$^{\circ}C$. The pH range for existence of V. parahaemolyticus and V. vulnificus were 4.5~l1.0 and 4.5~10.0, showing the similar resistance to pH. V. parahaemolyticus and V. vulnificus could grow in media containing up to 10.0% and 7.0% NaCl, respectively, Salt-tolerance of V. parahaemolyticus was higher than that of V. vulnificus. In an antibiotics sensitivity test against 16 strains of V. parahaemolyticus, twelve strains were resistant to ampicillin, eight strains were resistant to cephalothin. one strain was resistant to streptomycin, and one strain was resistant to ticarcillin.

Spin processor에 의한 저잡음 p-HEMT 제작 (Implementation of Low Noise p-HEMT Using Spin processor)

  • 김송강
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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    • pp.148-152
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    • 2001
  • One set of MMIC library has been developed using gate recess etching by spin processor. It is superior than that of dipping Method in the uniformity and the reproducibility of gate recess. A DC characteristics of p-HEMT have a uniform characteristics in the whole wafer than that of dipping method. The low noise p-HEMT with the $0.6{\mu}m$ and $200{\mu}m$ of gate length and gate width, respectivily, has a uniform characteristics of Idss 130~145 mA, conductances 190~220mS/nm, and threshold voltage -0.7~-1.1V in the drain voltage of 2V.

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Electrical Characteristics of InAlAs/InGaAs/InAlAs Pseudomorphic High Electron Mobility Transistors under Sub-Bandgap Photonic Excitation

  • Kim, H.T.;Kim, D.M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제3권3호
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    • pp.145-152
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    • 2003
  • Electrical gate and drain characteristics of double heterostructure InAlAs/InGaAs pseudomorphic HEMTs have been investigated under sub-bandgap photonic excitation ($hv). Drain $(V_{DS})-,{\;}gate($V_{DS})-$, and optical power($P_{opt}$)-dependent variation of the abnormal gate leakage current and associated physical mechanisms in the PHEMTs have been characterized. Peak gate voltage ($V_{GS,P}$) and the onset voltage for the impact ionization ($V_{GS.II}$) have been extracted and empirical model for their dependence on the $V_{DS}$ and $P_{opt} have been proposed. Anomalous gate and drain current, both under dark and under sub-bandgap photonic excitation, have been modeled as a parallel connection of high performance PHEMT with a poor satellite FET as a parasitic channel. Sub-bandgap photonic characterization, as a function of the optical power with $h\nu=0.799eV$, has been comparatively combined with those under dark condition for characterizing the bell-shaped negative humps in the gate current and subthreshold drain leakage under a large drain bias.

P형 실리콘 나노선과 Au 나노입자를 이용한 나노플로팅게이트 메모리소자의 전기적 특성 분석 (Memory characteristics of p-type Si nanowire - Au nanoparticles nano floating gate memory device)

  • 윤창준;염동혁;강정민;정동영;김상식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.1226-1227
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    • 2008
  • In this study, a single p-type Si nanowire - Au nanoparticles nano floating gate memory (NFGM) device is successfully fabricated and characterized their memory effects by comparison of electrical characteristics of p-type Si nanowire-based field effect transistor (FET) devices with Au nanoparticles embedded in the $Al_2O_3$ gate materials and without the Au nanoparticles. Drain current versus gate voltage ($I_{DS}-V_{GS}$) characteristics of a single p-type Si nanowire - Au nanoparticle NFGM device show counterclockwise hysteresis loops with the threshold voltage shift of ${\Delta}V_{th}$= 3.0 V. However, p-type Si nanowire based top-gate device without Au nanoparticles does not exhibit a threshold voltage shift. This behavior is ascribed to the presence of the Au nanoparticles, and is indicative of the trapping and emission of electrons in the Au nanoparticles.

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Optical characteristics of p-type ZnO epilayers doped with Sb by metalorganic chemical vapor deposition

  • Kwon, B.J.;Cho, Y.H.;Choi, Y.S.;Park, S.J.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.122-122
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    • 2010
  • ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.

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1,200V 급 Trench Gate Field stop IGBT 공정변수에 따른 스위칭 특성 연구 (A Study on Switching Characteristics of 1,200V Trench Gate Field stop IGBT Process Variables)

  • 조창현;김대희;안병섭;강이구
    • 전기전자학회논문지
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    • 제25권2호
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    • pp.350-355
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    • 2021
  • IGBT는 MOSFET과 BJT의 구조를 동시에 포함하고 있는 전력반도체 소자이며, MOSFET의 빠른 스위칭 속도와 BJT의 고 내압, 높은 전류내량 특성을 갖고 있다. GBT는 높은 항복전압, 낮은 VCE-SAT, 빠른 스위칭 속도, 고 신뢰성의 이상적인 파워 반도체 소자의 요구사항을 목표로 하는 소자이다. 본 논문에서는 1,200V 급 Trench Gate Field Stop IGBT의 상단 공정 파라미터인 Gate oxide thickness, Trench Gate Width, P+ Emitter width를 변화시키면서 변화하는 Eoff, VCE-SAT을 분석하였고, 이에 따른 최적의 상단 공정 파라미터를 제시하였다. Synopsys T-CAD Simulator를 통해 항복전압 1,470V와 VCE-SAT 2.17V, Eon 0.361mJ, Eoff 1.152mJ의 전기적 특성을 갖는 IGBT 소자를 구현하였다.

pH-mediated Regulation of Pacemaker Activity in Cultured Interstitial Cells of Cajal

  • Kim, Byung-Joo;Lee, Jae-Hwa;So, In-Suk;Kim, Ki-Whan
    • The Korean Journal of Physiology and Pharmacology
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    • 제10권1호
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    • pp.7-11
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    • 2006
  • Interstitial cells of Cajal (ICCs) are pacemakers in gastrointestinal tracts, regulating rhythmicity by activating nonselective cation channels (NSCCs). In the present study, we investigated the general characteristics and pH-mediated regulation of pacemaker activity in cultured interstitial cells of Cajal. Under voltage clamp mode and at the holding potential of -60 mV, the I-V relationships and difference current showed that there was no reversal potential and voltage-independent inward current. Also, when the holding potentials were changed from +20 mV to -80 mV with intervals of 20 mV, there was little difference in inward current. In pacemaker activity, the resting membrane potential (RMP) was depolarized (In pH 5.5, $23{\pm}1.5$ mV depolarized) and the amplitude was decreased by a decrease of the extracellular pH. However, in case of increase of extracellular pH, the RMP was slightly hyperpolarized and the amplitude was decreased a little. The melastatin type transient receptor potential (TRPM) channel 7 has been suggested to be required for intestinal pacemaking activity. TRPM7 produced large outward currents and small inward currents by voltage ramps, ranging from +100 to -100 mV from a holding potential of -60 mV. The inward current of TRPM7 was dramatically increased by a decrease in the extracellular pH. At pH 4.0, the average inward current amplitude measured at -100 mV was increased by about 7 fold, compared with the current amplitude at pH 7.4. Changes in the outward current (measured at +100 mV) were much smaller than those of the inward current. These results indicate that the resting membrane potential of pacemaking activity might be depolarized by external acidic pH through TRPM7 that is required for intestinal pacemaking activity.

하향주 누룩으로부터 분리한 젖산균의 동정 및 발효 특성 (Identification and Fermentation Characteristics of Lactic Acid Bacteria Isolated from Hahyangju Nuruk)

  • 박치덕;정희경;박환희;홍주헌
    • 한국식품저장유통학회지
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    • 제14권2호
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    • pp.188-193
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    • 2007
  • 하향주의 제조에 이용되는 누룩으로부터 젖산균을 분리하고, 배양학적 특성과 생리적 특성을 검토하였다. 분리된 총 11균주를 이용하여 알코올 10%와 pH 4.0에서 생육이 억제되는 양조학적으로 적합한 5균주의 젖산균을 분리하였고, 16S rRNA의 염기서열을 분석하여 동정한 결과 Lactobacillus plantarum 1균주, Lactobacillus sakei 1균주 및 Lactobacillus curvatus 3균주로 나타났으며 모두 젖산 간균으로 확인되었고, 이들을 각각 L. plantarum L-3, L. sakei L-10 그리고 L. curvantus L-8, 11, 12로 명명하였다. L plantarum L-3이 배양 초기 pH 4.0일 때 0.78%의 산도를 나타내어 나머지 4균주에 비해 약 10배정도 높은 산을 생성하였다. 분리된 5균주는 모두 $30^{\circ}C$에서 가장 산생성능이 우수하였고, L. sakei L-10을 제외한 모든 균주는 $45^{\circ}C$에서 생육이 정지되었으나, L. sakei L-10은 $40^{\circ}C$에서 생육이 저해되었다. 그리고 에탄을 농도가 6%일 때 산의 생성이 급격히 감소되었으며 L. curvatus L-8, 11, 12는 8% 에탄올에서 거의 생육이 이루어지지 않아 에탄올에 대한 내성이 낮았으며, L. plantarum L-3과 L sakei L-10은 10% 에탄올에서 생육이 정지되었다.