• Korean Journal of Materials Research
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• v.11 no.4
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• pp.247-250
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• 2001

We have fabricated and evaluated a new Si pin photodiode for red light detection with the web patterned $p^{+}$ -shallow diffused region in the light absorbing area. From the measurements of electro-optical characteristics under the bias of -5V, the junction capacitance of 4pF and the dark current of 235pA were obtained. When the 1.6㎼ optical power with peak wavelength of 670nm was incident on the device, the optical signal current of 0.48$\mu\textrm{A}$ and the responsivity of 0.30A/W were obtained. The fabricated device showed the improved sensitivity compared to the conventional circular type device and the maximum spectral response in a spectrum of 670~700nm. The web-patterned Si photodiode can be expected to have the good discrimination characteristics between digital signals in the application of red light optics.

• The Journal of Engineering Geology
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• v.12 no.4
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• pp.439-457
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• 2002

Sping waters at 60 sites and groundwaters at 6 wells in Mts. Geumjeong and Baekyang area were investigated for measuring nine physicochemical components (temperature, pH, Eh, EC, TDS, DO, salinity, alkalinity and discharge rate). The pH of spring waters ranges from 5.06 to 8.38, alkalinity from 7.93 to 102.21 mg/ㅣ, electrical conductance from 9.5 to $270{\;}\mu\textrm{s}/cm$, Eh from 64.2 to 685.9 mV, DO from 4.57 to 12.13 mg/l, and the discharge rate from 4.26 to 182.2 ml/s. General statistics was carried out to analyze statistical characteristics of those components. To compare the components with one another, regression analyses were carried out. And the components of spring waters were compared to those of groundwaters. Kriging was used to estimate the spatial variation of DO, pH, Eh, EC, alkalinity and discharge rate in the study area. The kriged isopleth maps were made using normalized kriged values to find anomalies of the physicochemical components and to compare anomalies of different components.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.85-92
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• 1992

A new potassium sensitive field effect transistor modified with 4'-aminobenzo-15-crown-5 was prepared and its response characteristics were evaluated. The response slope of $K^{+}-ISFET$ for pH was 30.0 mV/decade and the response time was mere than 3 minutes. And the response slope and time of the $K^{+}-ISFET$ for potassium ion as $19.5{\pm}0.2{\;}mV/decade$ and about 3 minutes, respectively. The linear response range of the sensor for potassium ion was $2.0{\times}10^{-4}{\sim}1.0{\times}10^{-2}M$. The selectivity coefficients of the $K^{+}-ISFET$ for the alkali and alkaline earth metal ions were also evaluated. Sodium, ammonium and calcium ions exhibited relatively significant interference. The long term stability of the sensor was remarkably improved and it could be used for more than 50 days.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.119-126
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• 2019

A flexible thermoelectric module, which consisted of 18 pairs of Bi₂Te₃-based hot-pressed p-n thermoelectric legs, were processed by filling the module inside with polydimethylsiloxane (PDMS) and removing the top and bottom substrates. Its power generation properties and bending characteristics were measured. With putting the flexible module on the wrist, an open circuit voltage of 2.23 mV and a maximum output power of 1.69 ㎼ were generated during staying still. On the other hand, an open circuit voltage of 3.32 mV and a maximum output power of 3.41 ㎼ were obtained with walking motion. The resistance variation of the module was kept below 1% even after applying 30,000 bending cycles with a bending curvature radius of 25 mm.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.28 no.2C
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• pp.117-123
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• 2008

Disturbed and undisturbed decomposed granite soils with different weathering degrees were extracted and analyzed through a series of tests (CD test, constant P test, etc.) to assess their dilatancy characteristics. Here, dilatancy refers to the volume change that takes place during shearing. As a result, the decomposed granite soil dilatancy impact increased the mean effective stress while concurrently lowering the water content in drained shear tests. In the case of undisturbed decomposed granite soil, which has a lower weathering degree, the water content increased at specific limits during the shearing process. A linear relationship of ${\Delta}V_d/V_1=D{\cdot}(({\sigma}_1-{\sigma}_3)-{\sigma}_c)/{{\sigma}_m}^{\prime}$ forms between shearing-induced volume change and principal stress variance.

• Solar Energy
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• v.8 no.1
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• pp.41-48
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• 1988

Heterojunction solar cells of $n-Cd_{1-x}Zn_xS/p-Si$ were fabricated by solution growth technique. The crystal structure, spectral response, surface morphology, and I-V characteristics of the $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cells were studied. The $Cd_{1-x}Zn_xS$ layer deposited on a silicon substrate (111) were found to be a cubic structure with the crystal orientation (111), (220) of the CdS and to be a hexagonal structure with crystal orientation (100) of the ZnS. The open-circuit voltage, short-circuit current, fill factor, and conversion efficiency of $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cell under $100mW/cm^2$ illumination were found to be 0.43V, 38mA. 0.76, and 12.4%, respectively.

• Journal of Forest and Environmental Science
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• v.15 no.1
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• pp.77-88
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• 1999

This experiment was carried out to compare the cultural characteristics of mycorrizal fungi associated with Pinus species, and to form mycorrhizal association with Pinus thunbergii by artificial inoculation of these fungi. Mycorrhizal fungi tested showed great variations in cultural characteristics. Most fungal isolates was best grown on MP medium, except PDA for Lepista sp.(Ln73/92). Hagem for Rhizopogon rubescens(FRI91017), and FDA for Paxillus sp.(Pa60/92). Optimum temperature for these fungi was $25^{\circ}C$, except $30^{\circ}C$ for Pisolithus tinctorius(FRI91004 and Pt1). The range of pH conditions favorable for these fungal isolates were also variable from weak acidic(pH5) to weak alkalic(pH8). Utilization of the carbon sources for these mycorrhizal fungi was different. Fructose, glucose, and maltose were all utilized well, while xylose was not utilized generally. Mycelial growth on the media supplemented with potassium nitrate was better than those on other media with urea, asparagine, or peptone as a nitrogen source, and the poor growth was observed on the media with urea. Pisolithus tinctorius(Pt1) among 7 mycorrhizal fungi artificially inoculated for the mycorrhizal synthesis on pinus thunbergii seedlings in the test tube containing a mixture of peat moss-vermiculite(2:1, v/v) formed mycorrhizae successfully after 3 months. P. tinctorius formed branched and unbranched roots covered with thick fungal mantle and radiating extemal hyphae. Mycorrhizal root cross-sectioned by hand, stained, and observed by Nomarski interference microscope showed typical characteristics of ectomycorrhizae: fungal mantle on epidermal cells and thick Hartig net hyphae around cortex cells.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.1-3
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• 2002

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed typical I-V characteristics. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.288-292
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• 1998

The p*-n ultra shallow junction diode with Co/Ti bilayer silicide was formed by ion implantation of $BF_{2}$ energy : 30KeV, dose : $5\times10^{15}cm^{-2}$] onto the n-well Si(100) region and RTA-silicidation of the evaporated Co($120\AA$)/Ti($40\AA$) double layer. The fabricated diode exhibited ideality factor of 1.06, specific contact resistance of $1.2\times10^{-6}\Omega\cdot\textrm{cm}^2$ and leakage current of $8.6\muA/\textrm{cm}^2$(-3V) under the reverse bias of 3V. The sheet resistance of silicided emitter region, the boron concentration at silicide/Si interface and the junction depth including silicide layer of ($500\AA$ were about $8\Omega\Box$, $6\times10^{19}cm^{-3}$, and $0.14\mu{m}$, respectively. In the fabrication of diode, the application of Co/Ti bilayer silicide brought improvement of ideality factor on the current-voltage characteristics as well as reduction of emitter sheet resistance and specific contact resistance, while it led to a little increase of leakage current.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.110-115
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• 2000

Deposition conditions of diamond thin films were optimized using hot-filament chemical vapor deposition (HFCVD). Boron-doped diamond thin films with varying boron densities were then fabricated using B4C solid pellets. Current-voltage responses and field emission currents were measured to test the characteristics of field emission display (FED). With the increase of boron doping, the crystal size of diamond decreased slightly, but its quality was not changed significantly in case of small doping. The I-V characterization was performed for Al/diamond/p-Si, and the current of doped diamond film was increased $10^4\sim10^5$ times as compared with that of undoped film. In the field emission properties, the electrons were emitted with low electric field with the increase of doping, while the emission current increased. The onset-field of electron emission was 15.5 V/$\mu\textrm{m}$ for 2 pellets, 13.6 V/$\mu\textrm{m}$ for 3 pellets and 11.1 V/$\mu\textrm{m}$ for 4 pellets. With the incorporation of boron, the slope of Fowler-Nordheim graph was decreased, revealing that the electron emission behavior was improved with the decrease of the effective barrier energy.