• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.130-138
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• 1996

The size of a device needs to scale down to increase its integrity and speed. As the size of the device is reduced, the hot-carrier degradation that severely effects on device reliabilty is concerned. In this paper, sub-micron buried-channel P-MOSFETs were fabircated, and the hot-carrier effects were invetigated. Also the hot-carrier effect in the buired-channel P-MOSFETs and the surface-channel P-MOSFETs were compared with simulation programs using SUPREM-4 and MINIMOS-4. This paper showed that the electric characteristics of sub-micron P-MOSFET are different from those of N-MOSFET. Also it showed that the punchthrough voltage ( $V_{pt}$ ) was abruptly drop after applying the stress and became almost 0V when the channel lengths were shorter than 0.6.mu.m. The lower punchthrough voltage causes the device to operte poorly by the deterioration of cut-off characteries in the switching mode. We can conclude that the buried channel P-MOSFET for CMOS circuits has a limit of the channel length to be around 0.6.mu.m.

• ETRI Journal
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• v.38 no.2
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• pp.244-251
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• 2016

In this paper, we investigate the electrical characteristics of two trench-gate-type super-barrier rectifiers (TSBRs) under different p-body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs' electrical properties depend strongly on their respective p-body implantation conditions. In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage ($V_F$) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p-body implantation condition, it exhibits pn junction diode.like properties, such as a high $V_F$, low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p-body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p-body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.

• Korean Journal of Materials Research
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• v.29 no.7
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• pp.456-462
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• 2019

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.317-320
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• 2005

In this paper, dynamic behaviour of short circuit occurring in Pulse Gas Metal Arc Welding (GMAW-P) is investigated Welding experiments with different values of pulsing parameters, high speed camera pictures and welding signals such as current and voltage were acquired to identify short circuit conditions in GMAW-P.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.70-76
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• 1994

A humidity sensing device based on a new humidity sensing principle is designed and fabricated in this study. The silicon thermopile is consisted of 25 couples of p-type diffused layer/Al strips. The internal resistance and the Seebeck coefficient are 300kl and 537$\mu$V/K, respectively Fabricated sensors showed linear response characteristics proportional to relative humidity changes with a sensitivity of 9$\mu$V/%RH in the range from 20% to 90%.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.1
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• pp.84.2-84.2
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• 2014

The intermediate polar V1323 Her = RXS J180340.0+401214 returned from its faint state 19.4-20.5 mag (mean brightness during the run, the instrumental system close to R or clear filter) (vsnet-alert 16958). On March 1, 2014, the brightness was 17.50 (clear filter) and next night 17.8 (R). During previous observations on January 24, the object was 19.6. We reported this findings to vsnet-alert 16958 and to The Astronomer's Telegramm (ATel #5944). The characteristics of the runs obtained before/after a switch between the high and low states will be presented.

• Journal of Magnetics
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• v.3 no.3
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• pp.82-85
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• 1998

A portable HTS RF SQUID-based system, weighing less than 20 kg has been built for susceptometry applications in weak magnetic fields, It includes a YBCO sensor for measuring the axial magnetic field component with a resolution of about $7{\times}10^{-13} T/Hz^{1/2}.$ This is determined by the intrinsic magnetic noise in the quasi-white noise region. There is a relaxation for a sudden increase in field due to magnetic flux creep in HTS. In this instance the time did not exceed 3~5 minutes.

• Journal of Environmental Science International
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• v.6 no.5
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• pp.461-472
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• 1997

This study was carried out to investigate the characteristics of chemical components and precipitation at Kimhae area from March, 1992 to June, 1994. The pH values, concentration of soluble ions($Cl^-$, $NO_2^-}$ $NO_3^-}$, $NO_4^{2-}$-, $PO_4^{3-}$. $F^-$, $Mg^{2+}$, $Ca^{2+}$, $Mn^{2+}$, $K^+) and non-soluble metals(Cr.Si. Zn, Pb, Cu, Fe, Mn, Mg, Ad. V. Cal were measured by pH meter, IC (ion Chromatography) and ICP(Inductively Coupled Plasma). The data were analyzed by the dally. hourly distribution characteristics of acidity and chemical components, as well as the correlation between them. The results are as follows. 1. The pH range of precipitation was from 3.45 to 6.80 in Kimhae area. and average value was pH 4.62 and main chemical components were $SO_4^{2-}$, $Cl^-$, $NO_3^-$. The highest pH value and concentration appeared in initial rain, which might result from urbanlzation and industrialization in this area and long term transportation from China. 2. The hourly correction distribution of main anions related to pH value In the rainwater showed $SO_4^{2-}$ > $NO_3^-$ > $Cl^-$. Hourly concentration of heavy metal and each ion was highly correlated with pH in the precipitation.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.6
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• pp.1175-1177
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• 2011

The SBN thin films were deposited on Pt/Ti/$SiO_2$/Si and p-type Si(100) substrate by rf magnetron sputtering method using $Sr_{0.7}Bi_{2.3}Nb_2O_9$ ceramic target. SBN thin films deposited were annealed at 600~800[$^{\circ}C$] by furnace in oxygen atmosphere during 40min. The polarization characteristics have been investigated to confirm the possibility of the SBN thin films for the application to destructive read out ferroelectric random access memory. The maximum remanent polarization and the coercive voltage are 0.6[${\mu}C/cm^2$], 1.2[V] respectively at annealing temperature of 800[$^{\circ}C$]. The leakage current density was the $2.57{\times}10^{-6}[A/cm^2]$ at an applied voltage of 5[V] at annealing temperature of 650[$^{\circ}C$]. Also, the fatigue characteristics of SBN thin films did not change up to $10^8$ switching cycles.

• Macromolecular Research
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• v.10 no.2
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• pp.75-79
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• 2002

Organic materials have considerable attention as active semiconductors for device applications such as thin-film transistors (TFTs) and diodes. Pentacene is a p-type organic semiconducting material investigated for TFTs. In this paper, we reported the morphological and electrical characteristics of pentacene TFT films. The pentacene transistors showed the mobility of 0.8 $\textrm{cm}^2$/Vs and the grains larger than 1 ${\mu}{\textrm}{m}$. Deep-level transient spectroscopy (DLTS) measurements were carried out on metal/insulator/organic semiconductor structure devices that had a depletion region at the insulator/organic-semiconductor interface. The duration of the capacitance transient in DLTS signals was several ten of seconds in the pentacene, which was longer than that of inorganic semiconductors such as Si. Based on the DLTS characteristics, the energy levels of hole and electron traps for the pentacene films were approximately 0.24, 1.08, and 0.31 eV above Ev, and 0.69 eV below Ec.