• Electrical & Electronic Materials
• /
• v.10 no.2
• /
• pp.150-155
• /
• 1997

Powder type electroluminescent device(P-ELD) in this study was prepared by printing method. P-ELDs were basically composed of phosphor, insulator and transparent conducting layer. The phosphor powder was prepared by sintering the mixture of ZnS as a host, Cu as an activator, and NaCl as a flux for co-activator and enhancement of growth of the phosphor particles. The phosphor layer was made by printing the paste of the cyanoethylpullan as a binder and the ZnS system phosphor powder. In order to evaluate the luminescence characteristics of ZnS P-ELD, applied voltage - luminance(V-L), frequency-luminance(f-L), and relative luminance spectra(L- .lambda.) characteristics were measured. The experimental results show that luminance increased with increasing the applied voltage and frequency. It can be explained in terms of the potential barrier formed between ZnS and CuS. Two emission peaks in luminance-wavelength spectra measured at applied voltage of 100 $V_{rms}$ were observed at 500nm as a primary peak and 460nm as a secondary peak, respectively.y.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.6
• /
• pp.575-579
• /
• 2008

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ of by RF magnetron sputtering. Target was ZnO ceramic mixed with 2 wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-3}$, mobilities from 0.194 to $2.3\;cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4\;{\Omega}cm$. p-type sample has density of $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. XPS spectra show that Ols has O-O and Zn-O structures and Al2p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.408-409
• /
• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.6
• /
• pp.21-27
• /
• 1998

Electrical and optical characteristics of ZnS:Mn/ZnS:Tb multilayer TFEL devices were investigated for multi-color electroluminescent display applications. Emission spectra of M $n^{2+}$ and T $b^{3+}$ ions were observed from ZnS:Mn/ZnS:Tb multi-layer TFEL devices, and were very broad from 540 nm to 640 nm. Saturation luminance measured at 155 V was 1025 Cd/$m^2$. C-V, $Q_{t}$ - $V_{p}$ curves showed that the phosphor capacitance ( $C_{p}$ ) and the insulator capacitance ( $C_{i}$ ) were 13.5nF/$\textrm{cm}^2$ and 60 nF/$\textrm{cm}^2$, respectively. Threshold voltage( $V_{thl}$) was shown to decrease from 126 V to 93 V due to the increase of the applied voltage from 155 V to 185 V, which was attributed to the increase of the polarization charge. The equation for the calculation of the threshold voltage as a function of the applied voltage was proposed for the first time. The calculated threshold voltage agreed well with the data obtained from the measurement.t.t.t.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.12
• /
• pp.56-63
• /
• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

• Proceedings of the KSR Conference
• /
• 2010.06a
• /
• pp.139-150
• /
• 2010

Recently, full-scale research about a passenger tube train system is being progressed as a next-generation transportation system in Korea in light of global green technology. The Korea Railroad Research Institute (KRRI) has commenced official research on the construction of a tube train system. In this paper, we studied various parameters of the tube train system such as the internal tube pressure, blockage ratio, and operating speed through computational analysis with a symmetric and elongated vehicle. This study was about the aerodynamic characteristics of a tube train that operated under standard atmospheric pressure (open field system, viz., ground) and in various internal tube environments (varying internal tube pressure, blockage ratio, and operating speed) with the same shape and operating speed. Under these conditions, the internal tube pressure was calculated when the energy efficiency had the same value as that of the open field train depending on various combinations of the operating speed and blockage ratio (the P-D relation). In addition, the dependence of the relation between the internal tube pressure and the blockage ratio (the P-${\beta}$ relation) was shown. Besides, the dependence of the relation between the total drag and the operating speed depending on various combinations of the blockage ratio and internal tube pressure (the D-V relation) was shown. Also, we compared the total (aerodynamic) drag of a train in the open field with the total drag of a train inside a tube. Then, we calculated the limit speed of the tube train, i.e., the maximum speed, for various internal tube pressures (the V-P relation) and the critical speed that leads to shock waves under various blockage ratios, which is related to the efficiency of the tube train (the critical V-${\beta}$ relation). Those results provide guidelines for the initial design and construction of a tube train system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.419-420
• /
• 2008

In this study, high quality (Al,N)-codoped p-type ZnO thin films were obtained by DC magnetron sputtering. The film on buffer layer grown in 80% $N_2$ ambient shows highest hole concentration of $2.93\times10^{17}cm^{-3}$. The films show hole concentration in the range of $1.5\times10^{15}$ to $2.93\times10^{17}cm^{-3}$, resistivity of 131.2 to 2.864 $\Omega$cm, mobility of 3.99 to 31.6 $cm^2V^{-1}s^{-1}$. The films on Si show easier p-doping in ZnO than those on buffer layer. The film on Si shows the highest quality of optical photoluminescence (PL) characteristics. The donor energy level $(E_d)$ of (Al,N)-codoped ZnO films is about 50 meV and acceptor energy level $(E_a)$ is in the range of 63 to 71 meV. It will help to improve p-type ZnO films.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.3
• /
• pp.89-92
• /
• 2009

High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of $1.5{\times}10^{15}{\sim}2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2${\sim}$2.864 ${\Omega}cm$, mobility in the range of 3.99${\sim}$31.6 $cm^2V^{-1}s^{-l}$, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth $(E_d)$ of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth $(E_a)$ was reduced to 63 meV.

• Korean Journal of Fisheries and Aquatic Sciences
• /
• v.33 no.6
• /
• pp.585-590
• /
• 2000

A hemolysin producing strain was isolated from Kum rivet estuary located in west part of Korea. In the process of identification the isolated strain was similar to V. mimicus but did not show characteristics of known Vibrio species; therefore, the strain was designated as Vibrio sp. D9 ( V. kumkang) tentatively and further identification study was carried out by comparing its bacteriological characteristics, Morphologically Vibrio sp. D9 was a typical straight roe with a polar flagellium. Among known Vibrio species no identical strains were found when using automatic bacteria identification system ($MicioLog^(TM)$system, release 4.0, Biolog Inc., USA) which evaluated the ability of metabolizing 95 kinds of carbon and nitrogen sources. Vibrio sp. D9 showed 18 and 13 different responses as compared to V. mimicus and V. cholerae, respectively. Clear hemolysis zones were observed with the strain against human and sheep blood agar plate, Hemolytic toxicity was confirmed by strong vascular permeability and fatal toxicity against mouse was also observed. Thus the strain was a pathogenic vibrio. Growth conditions for Vibrio sp. D9 were salinity of $0{\~}5.0{\%}$, pH of $6.4{\~}9.8$, temperature of $15{\~}41^{\circ}C$, respectively.

• Environmental Engineering Research
• /
• v.18 no.3
• /
• pp.163-168
• /
• 2013

In this study, an innovative media, iron mixed ceramic pellet (IMCP) has been developed for arsenic (As) removal from groundwater. A porous, solid-phase IMCP (2-3 mm) was manufactured by combining clay soil, rice bran, and Fe(0) powder at $600^{\circ}C$. Both the As(III) and As(V) adsorption characteristics of IMCP were studied in several batch experiments. Structural analysis of the IMCP was conducted using X-ray absorption fine structure (XAFS) analysis to understand the mechanism of As removal. The adsorption of As was found to be dependent on pH, and exhibited strong adsorption of both As(III) and As(V) at pH 5-7. The adsorption process was described to follow a pseudo-second-order reaction, and the adsorption rate of As(V) was greater than that of As(III). The adsorption data were fit well with both Freundlich and Langmuir isotherm models. The maximum adsorption capacities of As(III) and As(V) from the Langmuir isotherm were found to be 4.0 and 4.5 mg/g, respectively. Phosphorus in the water had an adverse effect on both As(III) and As(V) adsorption. Scanning electron microscopy results revealed that iron(III) oxides/hydroxides are aggregated on the surface of IMCP. XAFS analysis showed a partial oxidation of As(III) and adsorption of As(V) onto the iron oxide in the IMCP.