• Journal of information and communication convergence engineering
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• v.13 no.4
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• pp.257-263
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• 2015

In this study, organic field-effect transistors (OFETs) using a copper phthalocyanine (CuPc) material as an active layer and SiO₂ as a gate insulator were fabricated with varying active layer thicknesses and channel lengths. Further, using a thermal evaporation method in a high-vacuum system, we fabricated a CuPc FET device of the top-contact type and used Au materials for the source and drain electrodes. In order to discuss the channel formation and FET characteristics, we observed the typical current-voltage characteristics and calculated the threshold voltage of the CuPc FET device. We also found that the capacitance reached approximately 97 pF at a negative applied voltage and increased upon the accumulation of carriers at the interface of the metal and the CuPc material. We observed the typical behavior of a FET when used as an n-channel FET. Moreover, we calculated the threshold voltage to be about 15-20 V at V_DS = -80 V.

• Journal of Advanced Marine Engineering and Technology
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• v.34 no.7
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• pp.991-996
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• 2010

Blue-green and green LEDs have been successfully fabricated grown by MBE, which has introduced the $ZnS_ySe_{1-x-y}:Te_x$ (x=0.04, y~0.11-0.14) ternary epilayer as an active layer. From the I-V characteristics, the built-in voltage (~2.1 V) is very small compared to other wide bandgap LEDs, such as commercial InGaN-based LEDs (>3.2 V). From the C-V profiling, the effective carrier concentration in the p-type ZnMgSSe cladding layer was evaluated as ${\sim}2.8{\times}10^{16}\;cm^{-3}$ for the present LEDs.

• Journal of Biosystems Engineering
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• v.16 no.3
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• pp.239-247
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• 1991

This study was conducted to investigate the feasbility of continuously variable V-belt transmission(CVVT) as automatic power transmission system of combine harvesters. An experimental set-up for testing the performance of CVVT and the automatic transmission system was designed and used to analyze the power transmission characteristics of CVVT. The transmission efficiency of CVVT was increased logarithmically with increase of the load of driven shaft, but was not affected by the speed ratios of transmission. More than 80% of transmission efficiency was obtained in the 25N-m load and more of driven-shaft, and the maximum efficiency was 88~91%. When rapid speed change of the CVVT was attempted, the speed of driven shaft was stabilized within about 0.4 seconds after shift operation in both cases of increasing and decreasing of the speed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.263-266
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• 1999

Electrolunlinescent devices based on conjugated polymer emitting materials have been much attracted possible applications for multicolor flat panel display, since the conjugated polymers have a small band gap emitting obtained at a low driving voltage. In this paper, we fabricated the single layer EL device using poly(3-hexylthiophene) as emitting material Electroluminescence(EL) and I-V-L characteristics of indium-tin-oxide[ITO]P3HT/AI device with a various thickness were investigated. It was demonstrate that the I-V characteristics depend, not the voltage but the electric- field strength, The current is dependent on the electric filed and not on the applied voltage, indicating that the carriers are injected by a tunneling process. In the device, the barrier to hole injection is only 0.5eV and the barrier to electron injection is 1.5eV.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.6
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• pp.300-304
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• 2004

We have proposed the junction termination design employing shallow trench filled with silicon dioxide and field limiting ring (FLR). We have designed trenches between P+ FLRs to decrease the junction termination radius without sacrificing the breakdown voltage characteristics. We have successfully fabricated and measured improved breakdown voltage characteristics of the Proposed device for 1200 V-class applications. The junction termination radius of the proposed device has decreased by 15%-21% compared with that of the conventional FLR at the identical breakdown voltage. The junction termination area of the proposed device has decreased by 37.5% compared with that of the conventional FLR. The breakdown voltage of the proposed device employing 7 trenches was 1156 V, which was 80% of the ideal parallel-plane .junction breakdown voltage.

• Journal of Sinology and China Studies
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• v.79
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• pp.245-275
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• 2019

The Chinese language is a topic-prominent language and the ancient form of the language is not an exception. This literature examines the theta roles and cases of the arguments by setting sentence structures regarding 'TopP', which marks the eventuality meaning of 'DO', from the Analects of Confucius. Summary of the analysis is as follows: 1. Like the contemporary Chinese, ancient Chinese has two topic types; one is a base-generated topic(so called dangling topic) and the other is a topic generated by the interior movement in the TP. 2. The sentence structure of TopP from the Analects of Confucius that marks the eventuality meaning of 'DO' can be divided into seven categories which are: T+S+V+O', 'T+ES+V+EO', 'T+ES+V+EO', 'T+S+V+EC', 'T+ES+V+C', 'T+ES+V+O+C', 'T+S+V+EO+C'. 3. The predicate(V-v) of TopP from the Analects of Confucius that marks the eventuality meaning of 'DO' has a meaning characteristics of [+ will] and [+ progressive]. 4. The subject of TopP from the Analects of Confucius that marks the eventuality meaning of 'DO' is assigned a thematic role of an , and the object is assigned a thematic role of a . 5. The complement of TopP from the Analects of Confucius that marks the eventuality meaning of 'DO' is composed of overt preposition head and its complements, which receives diverse thematic roles from the preposition. However, it does not have a direct selective relationship but an indirect relationship with the main verb of the sentence. 6. Every argument, which is the subject, object, complement, and adverb, of TopP from the Analects of Confucius that marks the eventuality meaning of 'DO' can theoretically be moved in front of the subject and be topicalized. 7. The topic phrase from the Analects of Confucius that marks the eventuality meaning of 'DO' is derived in the order of predicate(V-v), object, complement, adjunct, subject, and topic, but when interpreting it in Korean it is in inverse order, which is in the order of topic, subject, adjunct, complement, object and predicate(V-v).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.53-56
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(p-hen)/Al(B) and glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/AlQ$_3$/Al(C) structures were fabricated by vacuum evaporation method. where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material. and tris(8-hydroxyquinoline)Aluminum(AlQ$_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(Phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/$\textrm{cm}^2$ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped- charge-limited current model with I-V characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.155-160
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• 2020

Ga₂O₃/n-type 4H-SiC heterojunction diodes were fabricated by RF magnetron sputtering. The optical properties of Ga₂O₃ and electrical properties of diodes were investigated. I-V characteristics were compared with simulation data from the Atlas software. The band gap of Ga₂O₃ was changed from 5.01 eV to 4.88 eV through oxygen annealing. The doping concentration of Ga₂O₃ was extracted from C-V characteristics. The annealed oxygen exhibited twice higher doping concentration. The annealed diodes showed improved turn-on voltage (0.99 V) and lower leakage current (3 pA). Furthermore, the oxygen-annealed diodes exhibited a temperature cross-point when temperature increased, and its ideality factor was lower than that of as-grown diodes.

• Journal of the Korean Society of Food Science and Nutrition
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• v.33 no.3
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• pp.593-597
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• 2004

This study was conducted to investigate the quality characteristics of liquid calcium acetate (LCAs) and solid calcium acetate (SCAs), Br-LCA, Pe-LCA and Ap-LCA as liquid form, Br-SCA, Pe-SCA and Ap-SCA as solid form. Calcium acetate was prepared by reacting of vinegars [brown rice (Br), persimmons (Pe) and apple (Ap)] and ash of black snail in order to obtain natural water soluble calcium resources. The pHs of the vinegars for preparing calcium acetate (CA) were the range of 2.34 ∼ 3.06, and the contents of the ash of black snail which reacted to 100 mL of the vinegars were 20.43∼23.50 g. The yields of solid CAs from 100 mL of the vinegars were 11.02∼13.01 g. The colors of liquid and solid CAs were light yellow in Ap-LCA and Ap-SCA, brown in Br-LCA and Br-SCA, dark brown in Pe-LCA and Pe-SCA. Calcium contents of Br-LCA, Pe-LCA and Ap-LCA were 3.02, 2.06 and 2.30% (w/v), and those of Br-SCA, Pe-SCA and Ap-SCA were 27.15, 16.31 and 19.48% (w/w), respectively. The solubilities of the solid CAs were 36.82 ∼ 39.92% (w/v) in distilled water, 32.05 ∼ 39.04% (w/v) in Soju, 13.12 ∼ 18.65% (w/v) in thick soysauce, 38.35 ∼ 38.90% (w/v) in ionic beverage, 33.47 ∼ 35.58% (w/v) in yoghurt, while the solid CAs formed the curds in soymilk and milk. The sour and bitter taste of the CAs were lower, while the astringent taste, fishy flavor and savory taste were higher than those of standard CA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.71-74
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• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.