• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.164-167
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• 2016

In this study, in order to develop relaxor ferroelectric ceramics for refrigeration device application with large electrocaloric effect, PLZT(8/65/35) composition was fabricated using conventional solid-state method. The Curi temperature of this composition PLZT ceramics was $230^{\circ}C$, and the P-E hysteresis loops of the PLZT ceramics as a fuction of temperature became slim by degrees with higher temperatures. The maximum value of ${\Delta}T$ of $0.243^{\circ}C$ in ambient temperature of $215^{\circ}C$ with 30 kV/cm was appeared. It is considered that PLZT ceramics possess the possibility of refrigeration device application.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.12 no.1
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• pp.58-68
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• 1998

A computer-controlled system for measuring dielectric hysteresis has been developed. This system consists of the wave generation par\, the high voltage amplifier part, the measurement part, the data acquisition part and the related controll circuits and is interfaced to P.C(personal computer). The applied voltage and its frequency are controlled by P.C . Since the measured datas can be saved in the RAM of P.C, the analysis and the graphics of the datas are very convenient. As a accuracy test, the capcitances of the commercial mica and styroll capacitors were measured by applying high voltage and the results were good agreement with the rating values. In the test of PZT ceramic sample, the typical D-E hysteresis loops were obtained by applying a single frequency voltage to the sample, and $\varepsilon-E$ and D-E hysteresis loops could be measured at the same time by applying a double frequency voltage to the sample.sample.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.4
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• pp.234-237
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• 2015

In this work, in order to develop the ceramics with an excellent electrocaloric effect, $[Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}]TiO_3$ ceramics were fabricated by conventional solid state reaction method. The ceramics was observed as rhombohedral phase by X-ray diffraction patterns. To investigate the electrocaloric effect of the ceramics, P-E hysteresis loops were measured at various temperature. The temperature change ${\Delta}T$ of these ceramics was calculated using the Maxwell's relations. The maximum value of temperature change ${\Delta}T$ was obtained as 0.3 $1^{\circ}C$ at $165^{\circ}C$ under applied electric fields 45 kV/cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.810-814
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• 2005

[ $Pb(Zr_{0.2}Ti_{0.8})O_3/SrRuO_3$ ] heteroepitaxial thin films were deposited at various temperatures on single crystal $SrTiO_3$ substrates by pulsed laser deposition and characterized for the microstructural and ferroelectric properties. The $SrTiO_3$ substartes etched by buffered oxide etch $(pH{\thickapprox}5.8)$ solution for 20s followed by the thermal annealing at $1000^{\circ}C$ for 1h showed the terrace ledges with a 0.4nm height. The $SrRuO_3$ bottom electrodes with a thickness of 52nm grown on $SrTiO_3$ single crystal also exhibit a terrace ledge similar to that of $SrTiO_3$. The PZT thin films were grown with an epitaxial relationship and showed typical P-E hysteresis loops shown at the epitaxial films. The 56nm thick-PZT films deposited at $650^{\circ}C$ exhibit a remanent polarization $(p_r)$ of $80{\mu}C/cm^2$ and a coercive field $(E_c)$ of 160kV/cm.

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.431-434
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• 2002

In this paper, The resonant frequencies of any modes in the dielectric resonator filter is determined by numberical analysis. The theoretical analysis for the dielectric resonator filter used Ansoft HFSS. We designed the dielectric resonator filter with resonant frequency 4.5 GHz. We describe the characteristics of delivering Power to resonator in different shaped coupling loops. Tile resonant mode of T $E_{01{\delta}}$ and T $E_{01{\delta}}$ could be selected by the horizontal and the vertical coupling loop.p.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.80-83
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• 2000

The post-annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},\;Ti_{0.48})O_3$) thin films($4000{\AA}$) have been investigated for a structure of PZT/Pt/Ti/Coming glass(1737). Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at $650^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were $8.1[{\mu}C/cm^2]$, 95[kV/cm] respectively. Polarization value decrease about 25% after $10^9$ cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.58-61
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• 2002

SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1477-1479
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• 2000

The annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$) thin films(4000${\AA}$) have been investigated for a structure of PZT/Pt/Ti/ITO coated glass. Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at 650$^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were 15.8[${\mu}C/cm^2$], 95[kV/cm] respectively. Polarization value decrease about 10% after $10^9$ cycles.

• Proceedings of the KIEE Conference
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• 2003.11a
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• pp.71-74
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• 2003

Fall-of-potential method is used usually to measure the ground impedance of large scale grounding system exactly. Because the interlinked magnetic flux between closed loops to inject test current and to measure potential rise is existed in E-P-C straight line arrangement, mutual(or inductive) coupling influences greatly on the measurement correctness. Measurement errors produced from inductive coupling could be reduced by the arrangement methods of auxiliary electrodes. Right angle or P-E-C order arrangement methods were effective to reduce the inductive coupling and the decrease degree of measurement error was analysed as quantitative through an experiment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.341-344
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• 1999

The effects of post annealing treatments of ferroelectrlclty in PZT(P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ thin film deposited on Pt/ $SiO_2$/Si substrate by RF-Magnetron sputtering methode was Investigated. Analyses by RTA(Rapid Thermal Annealing) treatments reveled that the crystallization process strongly depend on the healing temperature. The Perovskite structure with strong PZT (101) plan was obtained by RTA treatments at 75$0^{\circ}C$ With increasing RTA temperature of PZI thin films, the coercive field and remanent Polarization decreased, while saturation polarization( $P_{r}$) was decreased. P-E curves of Pt/PZT/Pt capacitor structures demonstrate typical hysteresiss loops. The measure values of $P_{r}$,. $E_{c}$ and dielectric constants by post annealed at 75$0^{\circ}C$ were 38 $\mu$C/$\textrm{cm}^2$ 35KV/cm and 974, respectively. Switching polarization versus fatigue characteristic showed 12% degradation up to 10$^{7}$ cycles.s.s.s.s.s.s.