• The Transactions of the Korean Institute of Electrical Engineers
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• v.34 no.10
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• pp.399-406
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• 1985

In this paper transparent PLZT ceramics for the composition of 9/65/35 (La/Zr/Ti ) are fabricated using hotpress and the possibility of application to optical shutter is examined by obtaining the On-Off characteristics of specimens. The ferroelectric E-P hysteresis loop exhibits slim loop suitable for the quadratic electrooptic effect. Measurements of the electrooptic effect show that specimens have the quadratic electrooptic effect but the light intensities as functions of electric field exhibit butterfly type hysteresis curves because of its slightly large saturation remanent polarization and coercive field. On-Off characteristics are obtained by electric fields of-6 kv/cm and +2kv/cm. As a result of experiments, 9/65/35 PLZT ceramics can be applied to optical shutter but construction with other composition which has more slim hysteresis loop is desired for obtaining the Off state by zero electric field.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.551-557
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• 1996

To decrease the hysteresis of electric field induced strain, $Y_{2}$ $O_{3}$ dopant of which amount is 0-0.8wt% was added to the (P $b_{0.73}$B $a_{0.27}$)(Z $r_{0}$ 75/ $Ti_{0.25}$) $O_{3}$ ceramics. Electromechanical coupling coefficients of the specimen with 0.1 Wt% $Y_{2}$ $O_{3}$ were $k_{p}$=26.9% and $k_{31}$ =20.4%, which exhibited the maximum value at the constant bias electric field of 10 kV/cm. At the same $Y_{2}$ $O_{3}$ addition amount, electric field piezoelectric constant ( $d_{3l}$) and strain(.DELTA.l/l) showed the maximum values of 139.6*10$^{-12}$ [C/N] and 126*10$^{-6}$ .DELTA. l/l respectively at 10 kV/cm electric field. And the hysteresis of strain showed the minimum value of 17.5%. So, we propose that it is possible to apply PBZT system with $Y_{2}$ $O_{3}$ dopant to the electrostrictive actuator.r.r.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.284-287
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• 2017

The electrocaloric effect in $0.94(Bi_{0.5}Na_{0.5})TiO_3+0.06KNbO3+0.9wt%$ G.F.ferroelectricceramics was observed in terms of the temperature change (${\Delta}T$) of the fabricated ceramics, Curie temperature $T_c$, and applied electric field. The specimens were fabricated by a conventional solid-state reaction. $T_c$ appeared near $165{\sim}170^{\circ}C$. The P-E hysteresis showed a tendency to slim down with a temperature increase and finally was slimmest near $150^{\circ}C$. With the increase of temperature, the polarization revealed a gradual decrease, and a sharp decline near $T_c$. When an electric field of 45 kV/cm was applied, the largest polarization was shown. The maximum value of the temperature change (${\Delta}T=0.31^{\circ}C$) was obtained at $165^{\circ}C$ under an applied electric field of 45 kV/cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.4
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• pp.234-237
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• 2015

In this work, in order to develop the ceramics with an excellent electrocaloric effect, $[Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}]TiO_3$ ceramics were fabricated by conventional solid state reaction method. The ceramics was observed as rhombohedral phase by X-ray diffraction patterns. To investigate the electrocaloric effect of the ceramics, P-E hysteresis loops were measured at various temperature. The temperature change ${\Delta}T$ of these ceramics was calculated using the Maxwell's relations. The maximum value of temperature change ${\Delta}T$ was obtained as 0.3 $1^{\circ}C$ at $165^{\circ}C$ under applied electric fields 45 kV/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.136-139
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• 1999

The post-annealing treatments on RF (Radio Frequency) magnetron sputtered PZI(Pb$\_$1.05/(Zr$\_$0.52/, Ti$\_$0.48/)O$_3$thin films(4000${\AA}$) have been investigated. for a structure of PZT/Pt/Ti/SiO$_2$/Si Crystallization pproperties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature. We were able to obtain a perovskite structure of PZT at a low temperature of 600$^{\circ}C$. P-E curves of Pd/PZT/Pt capacitor annealed at 700$^{\circ}C$ demonstrate typical hysteresis loops. The measured values of P$\_$r/, E$\_$c/, by post annealed at 700$^{\circ}C$ were 12.1 ${\mu}$C/$\textrm{cm}^2$, 120KV/cm respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.48-55
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• 2024

The changes in threshold voltage and DIBL were investigated for changes in remanent polarization P_r and coercive field E_c, which determine the characteristics of the P-E hysteresis curve of ferroelectric in NCFET (negative capacitance FET). The threshold voltage and DIBL (drain-induced barrier lowering) were observed for a junctionless double gate MOSFET using a gate oxide structure of MFMIS (metal-ferroelectric-metal-insulator-semiconductor). To obtain the threshold voltage, series-type potential distribution and second derivative method were used. As a result, it can be seen that the threshold voltage increases when P_r decreases and E_c increases, and the threshold voltage is also maintained constant when the P_r/E_c is constant. However, as the drain voltage increases, the threshold voltage changes significantly according to P_r/E_c, so the DIBL greatly changes for P_r/E_c. In other words, when P_r/E_c=15 pF/cm, DIBL showed a negative value regardless of the channel length under the conditions of ferroelectric thickness of 10 nm and SiO₂ thickness of 1 nm. The DIBL value was in the negative or positive range for the channel length when the P_r/E_c is 25 pF/cm or more under the same conditions, so the condition of DIBL=0 could be obtained. As such, the optimal condition to reduce short channel effects can be obtained since the threshold voltage and DIBL can be adjusted according to the device dimension of NCFET and the P_r and E_c of ferroelectric.

• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.948-952
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• 2001

PZT thick films were fabricated on alumina substrates by a screen printing method. They were sintered at $750^{\circ}C{\sim}1050^{\circ}C$ for 1 h under air or Pb atmosphere. Pyrochlore was observed as a second phase in PZT thick films sintered in air at temperatures of $950^{\circ}C$ and higher. PZT thick films sintered under Pb atmosphere showed denser microstructure, higher dielectric constant, and better-developed P-E hysteresis curve than the films sintered in air. PZT thick films sintered at $900^{\circ}C$ under Pb atmosphere showed the typical ferroelectric hysteresis with remanent polarization of $29.8{\mu}C/cm^2$ and coercive field of 48.4 kV/cm.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.2
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• pp.72-78
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• 2008

The speed variation of SRM is fulfilled throughout a transition from chopping control to single pulse operation. (i,e., low speed to high speed operation). It is unsatisfied with performance at all operational regimes. In this paper, the operational performance of SRM can be improved by using current hysteresis control method. This method maintains a generally flat current waveform. At the high speed, the current chopping capability is lost due to the development of the back-EMF. Therefore SRM operates in single pulse mode. By using zero-current switching and zero-voltage switching technique, the stress of power switches can be reduce in chopping mode. When the commutation from one phase winding to another phase winding, the current can be zero as fast as possible in this period because several times negative voltage of DC-source voltage produce in phase winding. This paper is compared to performance based on conventional C-dump converter topology and the proposed resonant C-dump converter topology. Simulation and experimental results are presented to verify the effectiveness of the proposed circuit.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1986-1988
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• 1999

Ferroelectric lead zirconate titanate(PZT) thin films were prepared on various bottom electrodes by rf magnetron sputtering methode. The structural phase and surface morphology of the PZT thin films were largely affected by the bottom electrodes. P-E curves of PZT thin films deposited on Pt. $RuO_2$ and Ru/$RuO_2$ bottom electrode showed typical P-E hysteresis loop. The measure values of $P_r,\;E_c$ of the Ru/PZT/Ru/$RuO_2$ capacitor were $16.9{\mu}C/Cm^2$, 140kV/ cm, respectively. The Ru/PZT/Ru/$RuO_2$ capacitors were fatigue free uP to nearly $10^9$ switching cycle but Pt/PZT/Pt capacitor showed 34% degradation uP to $10^9$ switching cycle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.138-145
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• 1998

The $(Pb_{0.9}Ca_{0.1})TiO_3$[PCT] thin films have been deposited by sol-gel processing on Si-wafer and ITO glass substrates. The creak-free films have been obtained by rapid thermal annealing at $700^{\circ}C$ for 10 minute and characterized by XRD, SEM and electrical measurements. Their tetragonality c/a was 1.041 and grain size was $0.15{\sim}0.2{\mu}m$. When the electrode system of sample was Au/PCT/ITO(MFM) and film thickness was $0.8{\mu}m$, dielectric constant, dielectric loss and Curie temperature were about 149, 0.085 and $449^{\circ}C$ at 10kHz, respectively. Spontaneous polarization $P_s$, remnant polarization $P_r$ and coercive field $E_c$ were about $5.29{\mu}C/cm^2$, $4.15{\mu}C/cm^2$ and 82kV/cm calculated by hysteresis loop.