• ETRI Journal
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• v.35 no.4
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• pp.734-737
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• 2013

Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 $cm^2/Vs$, $10^5$, and $10^{-10}$ A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.169-170
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• 2006

In this study, ultra thin films of ferroelectric vinylidene fluoride-trifluoroethylene (VF2-TrFE) copolymer were fabricated on degenerated Si (n+, $0.002\;{\Omega}{\cdot}cm$) using by spin coating method. A 1~5 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene (VF2:TrFE=70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers at a spin rate of 2000~5000rpm for 30 seconds. After annealing in a vacuum ambient at $200^{\circ}C$ for 60 min, upper gold electrodes were deposited by vacuum evaporation for electrical measurement. X-ray diffraction results showed that the VF2-TrFE films on Si substrates had $\beta$-phase of copolymer structures. The capacitance on $n^+$-Si(100) wafer showed hysteresis behavior like a butterfly shape and this result indicates clearly that the dielectric films have ferroelectric properties. The typical measured remnant polarization (2Pr) and coercive filed (EC) values measured using a computer controlled a RT-66A standardized ferroelectric test system (Radiant Technologies) were about $0.54\;C/cm^2$ and 172 kV/cm, respectively, in an applied electric field of ${\pm}0.75\;MV/cm$.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2004.04a
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• pp.135-138
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• 2004

Conventional piezoelectric lead-zirconate-titanate (PZT) senor has high sensitivity, but it is very brittle. Recently polymer films such as polyvinylidene fluoride (PVDF) and poly(vinylidene fluoride­trifluoroethylene) (P(VDF-TrFE)) copolymer have been used as a sensor. The advantages of polymer sensor are the flexibility and mechanical toughness. Simple process and possible several shapes are also additional advantages. Polymer sensor can be directly embedded in a structure. In this study, nondestructive damage sensitivity of single basalt fiber/epoxy composites was investigated with sensor type and thermal damage using AE and oscilloscope. And AE waveform for epoxy matrix with various damage types was compared to each other. The damage sensitivity of two polymer sensors was rather lower than that of PZT sensor. The damage sensitivity of PVDF sensor did not decrease until thermal damage temperature at $80^{\circ}C$ and they decreased significantly at $110^{\circ}C$ However, the damage sensitivity of P(VDF-TrFE) sensor at $110^{\circ}C$ was almost same in no damage sensor. For both top and side impacts, the difference in arrival time increased with increasing internal and surface damage density of epoxy matrix.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.112-112
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• 2009

Temperature dependence of the ferroelectric properties of poly(vinylidefluoride-trifluoroethylene) copolymer thin films are studied with various insulators such as $SrTa_2O_6$ and $La_2O_3$. Thin films of poly(vinylidene fluoridetrifluoroethylene) 75/25 copolymer were prepared by chemical solution deposition on p-Si substrate. Capacitance-voltage (C-V) and current density (J-V) behavior of the Au/P(VDF-TrFE)/Insulator/p-Si structures were studied at ($150-200\;^{\circ}C$) and dielectric constant of the each insulators were measured to be about 15 at $850\;^{\circ}C$ for 10 minutes. Memory window width at 5 V bias the MFIS(metal-ferroelectric-insulator-semiconductor) structure with as deposited films was about 0.5 V at high temperature ($200\;^{\circ}C$). And the memory window width increased as voltage increased from 1 V to 5 V.

• Membrane and Water Treatment
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• v.13 no.5
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• pp.235-243
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• 2022

The paper presents the effect of operating temperatures and flow rates on the distillate flux that can be obtained from a hydrophobic membrane having the characteristics: pore size of 0.15 ㎛; thickness of 130 ㎛; and 85% porosity. That membrane in the present investigation could be the direct contact (DCMD) or the air-gap membrane distillation (AGMD). To model numerically the membrane distillation processes, the two-dimensional computational fluid dynamic (CFD) is used for the DCMD and AGMD cases here. In this work, DCMD and AGMD models have been validated with the experimental data using different flows (Parallel and Counter-current flows) in non-steady-state situations. A good agreement is obtained between the present results and those of the experimental data in the literature. The new approach in the present numerical modeling has allowed examining effects of the nature of materials (Polyvinylidene fluoride (PVDF) polymers, copolymers, and blends) used on thermal properties. Moreover, the effect of the area surface of the membrane (0.021 to 3.15 ㎡) is investigated to explore both the laminar and the turbulent flow regimes. The obtained results found that copolymer P(VDF-TrFE) (80/20) is more effective than the other materials of membrane distillation (MD). The mass flux and thermal efficiency reach 193.5 (g/㎡s), and 83.29 % using turbulent flow and an effective area of 3.1 ㎡, respectively. The increase of feed inlet temperatures and its flow rate, with the reduction of cold temperatures and its flow rate are very effective for increasing distillate water flow in MD applications.