• Journal of the Korean Vacuum Society
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• 제7권3호
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• pp.221-228
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• 1998

Enhancement of adhesion between polymer films and metal films are obtained by forming the hydrophilic functional groups on the polymer surfaces by ion assisted reaction which uses ion beam in reactive gas environments. In ion assisted reaction, ion dose, blown gas flow rate and ion energy were changed from $5\times 10^{14}$ to $1\times 10^{17}\textrm{ions/cm}^2$, from 0 to 8 sccm, and 0.3 to 1.2 kV, respectively. Wetting angle of water on polymer films modified by $ Ar^+$ ion without blowing oxygen decreases to ~$40^{\circ}$. Contact angle of water on polymer films modified by $ Ar^+$ ion with blowing oxygen decreases to ~$20^{\circ}$, and the surface free energy increases to ~70 dyne/$\textrm{cm}^2$. However, contact angle of water on polytetraflouroethylene (PTFE) modified by ion assisted reaction increases with ion dose. The adhesion strength of metal film deposited on the polymer surface was investigated. In the case of the metal film deposited on the untreated polymers, the metal films are detached from the polymer surface. While, In the case of the metal film deposited on the polymers treated by ion assisted reaction, the metal films are strongly adhere to the polymer surfaces.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.434-435
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• 2012

Plasma enhanced chemical vapor deposition (PECVD) silicon dioxide thin films have many applications in semiconductor manufacturing such as inter-level dielectric and gate dielectric metal oxide semiconductor field effect transistors (MOSFETs). Fundamental chemical reaction for the formation of SiO2 includes SiH4 and O2, but mixture of SiH4 and N2O is preferable because of lower hydrogen concentration in the deposited film [1]. It is also known that binding energy of N-N is higher than that of N-O, so the particle generation by molecular reaction can be reduced by reducing reactive nitrogen during the deposition process. However, nitrous oxide (N2O) gives rise to nitric oxide (NO) on reaction with oxygen atoms, which in turn reacts with ozone. NO became a greenhouse gas which is naturally occurred regulating of stratospheric ozone. In fact, it takes global warming effect about 300 times higher than carbon dioxide (CO2). Industries regard that N2O is inevitable for their device fabrication; however, it is worthwhile to develop a marginable nitrous oxide free process for university lab classes considering educational and environmental purpose. In this paper, we developed environmental friendly and material cost efficient SiO2 deposition process by substituting N2O with O2 targeting university hands-on laboratory course. Experiment was performed by two level statistical design of experiment (DOE) with three process parameters including RF power, susceptor temperature, and oxygen gas flow. Responses of interests to optimize the process were deposition rate, film uniformity, surface roughness, and electrical dielectric property. We observed some power like particle formation on wafer in some experiment, and we postulate that the thermal and electrical energy to dissociate gas molecule was relatively lower than other runs. However, we were able to find a marginable process region with less than 3% uniformity requirement in our process optimization goal. Surface roughness measured by atomic force microscopy (AFM) presented some evidence of the agglomeration of silane related particles, and the result was still satisfactory for the purpose of this research. This newly developed SiO2 deposition process is currently under verification with repeated experimental run on 4 inches wafer, and it will be adopted to Semiconductor Material and Process course offered in the Department of Electronic Engineering at Myongji University from spring semester in 2012.

• Korean Chemical Engineering Research
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• 제56권5호
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• pp.631-640
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• 2018

The application of an oxy-combustion circulating fluidized bed combustor (Oxy-CFBC) for low grade coals has recently developed in the world to meet the continuous increase of energy demand and to achieve the reduction of greenhouse gases. Since demo plants for Oxy-CFBC have been developed, the combustion properties of Oxy-CFBC in various operation conditions, such as gas flow rates, combustion temperature, fuel, and so on, should be investigated to develop design criteria for a commercial Oxy-CFBC. In this study, a computational simulation tool for Oxy-CFBC was developed on the basis of the IEA-CFBC (International Energy Agency Circulating Fluidized Bed Combustor) model. Simulation was performed under various conditions such as reaction temperature ($800^{\circ}C{\sim}900^{\circ}C$), oxygen contents (21%~41%), coal feeding rate, Ca/S mole ratio (1.5~4.0), and so on. Simulation results show that the combustion furnace temperature is higher in oxy 1 than air fired. However, the temperature gradient tended to decrease with increasing oxy mixing percent. In case of $SO_x$, the higher the Ca/S mole ratio and oxy mixing percent, the higher the desulfurization efficiency.

• Journal of Surface Science and Engineering
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• 제39권4호
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• pp.179-189
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• 2006

High velocity oxygen fuel(HVOF) thermal spray coating of WC-Co powder is one of the most promising candidate for the replacement of the traditional hard chrome plating and ceramics coating because of the environmental problem of the very toxic $Cr^{6+}$ known as carcinogen and the brittleness of ceramics coating. WC-Co micron and nano powder were coated by HVOF thermal spraying method for the study of durability improvement of the high speed spindle. Coatings were planned by Taguchi program for the four spray parameters of spray distance, flow rates of hydrogen, oxygen and powder feed rate. Optimal coating process was obtained by the studies of coating properties such as porosity, surface roughness, micro hardness, and micro structure. WC-Co micron and nano powder were coated on the Inconel 718 substrate by the optimal coating process obtained in this study. The wear behaviors were studied by the sliding wear tester at room temperature and at an elevated temperature of $500^{\circ}C$ for the application to high speed spindle. Sliding wear test was carried out for four most promising hard coatings of chrome coating, ceramics coatings such as $A1_2O_3,\;Cr_2O_3$ and HVOF Co-alloy T800 for the comparison of their wear behaviors. HVOF WC-Co coating was better than other coatings showing highest micro hardness of 1400 Hv and comparable friction coefficients with others. HVOF WC-Co coating is a strong candidate for the replacement of the traditional hard chrome plating for the high speed spindle.

• Journal of Aerospace System Engineering
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• 제18권1호
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• pp.53-63
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• 2024

Adopting an engine igniter with high efficiency and ignition performance is essential for reliable operation of liquid rocket engines. In this study, we developed a spark torch igniter for a 450 N-scale methane-oxygen liquid rocket engine by conducting numerical analyses, igniter manufacturing and validation. Specifically, we conducted a parametric study for maximizing the enthalpy at the igniter exit, specifically by adjusting the mass flow rate, nozzle area ratio, fuel-oxidizer mixture ratio, and the igniter length-to-diameter. The heat transferred via the igniter nozzle exit was computed using 3-dimensional numerical simulations. We also manufactured and tested the igniter based on a deduced design to confirm ignition performance of the designed spark torch igniter. The igniter developed through this study could contribute to the development of practical propulsion systems such as upper-stage engines of small launch vehicles.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 한국해양정보통신학회 2008년도 춘계종합학술대회 A
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• pp.738-739
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• 2008

The SiOC film of carbon centered system was prepared using bistrimethylsilymethane and oxygen mixed precursor by the chemical vapor deposition. The chemical properties of he SiOC film were analyzed by the contact angle and FTIR spectra. The dielectric constant of the deposited films decreased after annealing process, and the correlation between the increasing the BTMSM/O2 flow rate ratio and he dielectric constant did not exist. However, the trend of increasing or decreasing of the dielectric constant repeated and here is the correlation ship between the dielectric constant and the Si-O-C bond in the range of $950{\sim}1200\;cm^{-1}$. The dielectric constant decreased between samples with the chemical shift. The lowest dielectric constant was 1.65 at the sample, which was observed he chemical shift.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제44권11호
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• pp.20-25
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• 2007

In this paper, It was reported the dielectric constant in organic inorganic hybrid silica material such as SiOC film modeling of bond structure by annealing in organic properties. The organic inorganic hybrid silica material were deposited using bis-trimethylsilymethane (BTMSM, [(CH3)3Si]2CH2) and oxygen gas precursor by a plasma chemical vapor deposition (CVD). The organic inorganic hybrid silica material have three types according to the deposition condition. The dielectric constant of the films were performed MIS(Al/Si-O-C film/p-Si) structure. The C 1s spectra in organin inorganic silica materials with the flow rate ratio of O2/BTMSM=1.5 was organometallic carbon with the peak 282.9 eV by XPS. It means that organometallic carbon component is the cross-link bonding structure with good stability. The dielectric constant was the lowest at annealed films with cross-link bonding structure.

• Journal of Korean Society of Water and Wastewater
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• 제30권2호
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• pp.167-177
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• 2016

This work investigated the decomposition of aqueous anatoxin-a originated from cyanobacteria using an underwater dielectric barrier discharge plasma system based on a porous ceramic tube and an alternating current (AC) high voltage. Plasmatic gas generated inside the porous ceramic tube was uniformly dispersed in the form of numerous bubbles into the aqueous solution through the micro-pores of the ceramic tube, which allowed an effective contact between the plasmatic gas and the aqueous anatoxin-a solution. Effect of applied voltage, treatment time and the coexistence of nutrients such as $NO_3{^-}$, $H_2PO_4{^-}$ and glucose on the decomposition of anatoxin-a was examined. Chemical analyses of the plasma-treated anatoxin-a solution using liquid chromatography-mass spectrometry (LC-MS) and ion chromatography (IC) were performed to elucidate the mineralization mechanisms. Increasing the voltage improved the anatoxin-a decomposition efficiency due to the increased discharge power, but the energy required to remove a given amount of anatoxin-a was similar, regardless of the voltage. At an applied voltage of 17.2 kV (oxygen flow rate: $1.0L\;min^{-1}$), anatoxin-a at an initial concentration of $1mg\;L^{-1}$ (volume: 0.5 L) was successfully treated within 3 min. The chemical analyses using LC-MS and IC suggested that the intermediates with molecular weights of 123~161 produced by the attack of plasma-induced reactive species on anatoxin-a molecule were further oxidized to stable compounds such as acetic acid, formic acid and oxalic acid.

• Korean Journal of Materials Research
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• 제11권7호
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• pp.537-544
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• 2001

Anatase $TiO_2$thin films as a photocatalyst were prepared by the reactive magnetron sputtering process. The $TiO_2$thin films were deposited on Si substrates under the various conditions : oxygen partial pressure, working pressure, sputtering time, and D.C. power. The photocatalystic degradation of $TiO_2$thin film have been studied to examine the contribution of surface morphology and crystallinity. The thin films with a good crystallinity or a rough surface showed a high photocatalytic degradation rate on phenol and E.coli 078 experiment. Compared with that of only UV radiation, the photocatalytic efficiency of $TiO_2$thin film under the UV radiation and the $O_2$ flow increased. We found that the crystallity and the morphology were the important factors on the photocatalytic efficiency of TiO$_2$thin film.

• The Transactions of the Korean Institute of Electrical Engineers C
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• 제49권8호
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• pp.438-444
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• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.