• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1335-1341
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• 1999

The electrical conductivity ($\sigma$) of TiO2 doped with 0.05-4.0mol% Nb2O5 was measured in the oxygen partial pressure range of 10-17 to 100 atm and temperature range of 1100 to 130$0^{\circ}C$ to investigate the electrical properties and defect types. The oxygen partial pressure dependence of the electrical conductivity (log$\sigma$/logPo2) above 110$0^{\circ}C$ was divided into the four regions. From these experimental results the following defect regions were proposed ; 1) Magneli phase(extended defect) 2) reduced rutile region where intrinsic defect predominates 3) nearly stoichiometric region which is independent on the oxygen partical pressure and 4) overstoichiometric region which is not observed in pure TiO2 The electrical conductivity of Nb-doped TiO2 depended on the doping content the oxygen partial pressure and the measuring tem-perature.

• Nuclear Engineering and Technology
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• v.23 no.3
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• pp.321-327
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• 1991

A defect model e)[plaining the oxygen potential of Gadolinia doped urania based on the defect structure of pure urania has been developed. Gd-dopants are assumed to stay in the cation sites pushing away nearby oxygen interstitials reducing the number of interstitial sites. Gd-dopants also form dopant-vacancy clusters in the abundance of oxygen vacancies. This model explains the discontinuous change of the oxygen potential at O/M= as well as the increase of the potential with the dopant concentration.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.72-77
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• 1998

A defect model for UO$_2$ fuel containing soluble fission products was devised based on the defect structure of pure and doped uranias. Using the equilibrium between fuel solid-solution and fission-products and the material balance within the fuel, a tracing method to get the stoichiometry change of urania fuel with burnup was made. This tracing method was applied to high burnup urania fuel and DUPIC fuel. The oxygen potential of urania fuel turned out to increase slightly with burnup. The stoichiometry change was calculated to be negligible due to the buffering role f Mo. The oxygen potential of DUPIC fuel out to be sensitive to the initial chemical state of Mo in the fuel.

• Journal of the Korean Ceramic Society
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• v.47 no.2
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• pp.99-105
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• 2010

The electrical transport properties of mayenite ($Ca_{12}Al_{14}O_{33}$ or $12CaO{\cdot}7Al_2O_3$; mostly abbreviated as $C_{12}A_7$) can be controlled in a wide range by varying the oxygen deficiency: At high temperatures mayenite becomes either an oxygen solid electrolyte, a mixed ionic/electronic conductor or an inorganic electride with metal-like properties upon chemical reduction (removing oxygen). The underlying defect chemistry can be understood on the basis of a relatively simple model-despite the complex cage structure: A point defect model based on the assumption that the framework $[Ca_{12}Al_{14}O_{32}]^{2+}$ acts as a pseudo-donor describes well the high temperature transport properties. It accounts for the observed conductivity plateau at higher oxygen activities and also describes the experimentally observed oxygen activity dependence of the electronic conductivity with -1/4 slope at temperatures between 800 and $1000^{\circ}C$. Doping effects in mayenite are still not well explored, and we review briefly the existing data on doping by different elements. Hydration of mayenite plays a crucial role, as Mayenite is hygroscopic, which may be a major obstacle for technical applications.

• 한국연소학회:학술대회논문집
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• 2005.10a
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• pp.328-336
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• 2005

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine the chemical quenching phenomenon, we prepared thermally grown silicon oxide plates with well-defined defect density. Ion implantation was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove the oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}C$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). The analysis shows that as the ion energy increases, the number of structural defect also increases and non-stoichiometric condition of $SiO_x(x{\le}2)$ plates is enhanced. From the quenching distance measurements, we found out that when the surface temperature is under $300^{\circ}C$, the quenching distance decreases on account of reduced heat loss; as the surface temperature increases over $300^{\circ}C$, however, quenching distance increases despite reduced heat loss effect. Such aberrant behavior is caused by heterogeneous chemical reaction between active radicals and surface defect sites. The higher defect density, the larger quenching distance. This results means that chemical quenching is governed by radical adsorption and can be parameterized by the oxygen vacancy density on the surface.

• The Korean Journal of Ceramics
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• v.2 no.3
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• pp.131-136
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• 1996

The electrical conductivity of polycrystalline TiO2 samples was measured over the temperature range 1000°-1400℃ and from 0.21 to 10-16 atm of oxygen. Based on the excellent fit observed between the theoretically derived relatin σ3=(Aσ+B)Po2-1/2+D'σ2 and the experimental conductivity data, the nonstoichimetric defect structure of TiO2 was rationalized in terms of a defect model involving quasi-free electrons and both singly and doubly ionized oxygen vacancies. The standard enthalpy of formation for the following defect reactions in TiO2. (a) OO={{{{ { 1} over {2 } }}O2(g)+VO+e'; Δ{{{{ { H}`_{o } ^{a } }}=5.15(eV) (b) OO={{{{ { 1} over {2 } }}O2(g)+VO+2e'; Δ{{{{ { H}`_{0 } ^{ a} }}=6.30(eV) (c) VO=VO+e'; Δ{{{{ { H}`_{0 } ^{a } }}=1.15(eV) were determined from the temperature dependence of A and B obtained from the above relation and from the experimental expression between the electron mobility and temperature. The electrical conductivity of TiO2 in air below approximately 950℃ appears, on the basis of this investigation, to be impurity controlled due to the presence of aluminum rather than intrinsic conduction.

• Journal of Integrative Natural Science
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• v.11 no.4
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• pp.209-211
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• 2018

A zinc oxide thin film doped with aluminum was deposited by RF sputtering. The deposition temperature of the sputter chamber was kept constant at $350^{\circ}C$, the power supplied to the chamber was 75 W, the oxygen flow rate was changed to 10 sccm and 20 sccm, and the thin film deposition time was changed to 120 and 180 minutes. The structures of the deposited zinc oxide thin films were analyzed by van der Waals method using an X-ray diffractometer. As a result of X-ray diffraction, the amount of oxygen supplied to the zinc oxide thin film increased, and the surface growth of the (002), (400), (110), and (103) planes showed a change with increasing deposition time. Moreover, as the amount of oxygen supplied to the zinc oxide thin film increased, their shape was observed to be coarse, and the thin film' s particles shape was correlated with the oxygen chemical defect introduced.

• Journal of Periodontal and Implant Science
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• v.46 no.4
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• pp.244-253
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• 2016

Purpose: The aim of this study was to characterize the healing in the grafted calvarial defects of rats after adjunctive hyperbaric oxygen therapy. Methods: Twenty-eight male Sprague-Dawley rats (body weight, 250-300 g) were randomly divided into two treatment groups: with hyperbaric oxygen therapy (HBO; n=14) and without HBO (NHBO; n=14). Each group was further subdivided according to the bone substitute applied: biphasic calcium phosphate (BCP; n=7) and surface-modified BCP (mBCP; n=7). The mBCP comprised BCP coated with Escherichia-coli-derived recombinant human bone morphogenetic protein-2 (ErhBMP-2) and epigallocatechin-3-gallate (EGCG). Two symmetrical circular defects (6-mm diameter) were created in the right and left parietal bones of each animal. One defect was assigned as a control defect and received no bone substitute, while the other defect was filled with either BCP or mBCP. The animals were allowed to heal for 4 weeks, during which those in the HBO group underwent 5 sessions of HBO. At 4 weeks, the animals were sacrificed, and the defects were harvested for histologic and histomorphometric analysis. Results: Well-maintained space was found in the grafted groups. Woven bone connected to and away from the defect margin was formed. More angiogenesis was found with HBO and EGCG/BMP-2 (P<0.05). None of the defects achieved complete defect closure. Increased new bone formation with HBO or EGCG/BMP-2 was evident in histologic evaluation, but it did not reach statistical significance in histometric analysis. A synergic effect between HBO and EGCG/BMP-2 was not found. Conclusions: Within the limitations of this study, the present findings indicate that adjunctive HBO and EGCG/BMP-2 could be beneficial for new bone formation in rat calvarial defects.

• Current Photovoltaic Research
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• v.4 no.3
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• pp.124-129
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• 2016

Recently industry has voiced a need for optimally designing the production process of low-cost, high-quality ingots by improving productivity and reducing production costs with the Czochralski process. Crystalline defect control is important for the production of high-quality ingots. Also oxygen is one of the most important impurities that influence crystalline defects in single crystals. Oxygen is dissolved into the silicon melt from the silica crucible and incorporated into the crystalline a far larger amount than other additives or impurities. Then it is eluted during the cooling process, there by causing various defect. Excessive quantities of oxygen degrade the quality of silicone. However an appropriate amount of oxygen can be beneficial. because it eliminates metallic impurities within the silicone. Therefore, when growing crystals, an attempt should be made not to eliminate oxygen, but to uniformly maintain its concentration. Thus, the control of oxygen concentration is essential for crystalline growth. At present, the control of oxygen concentration is actively being studied based on the interdependence of various factors such as crystal rotation, crucible rotation, argon flow, pressure, magnet position and magnetic strength. However for methods using a magnetic field, the initial investment and operating costs of the equipment affect the wafer pricing. Hence in this study simulations were performed with the purpose of producing low-cost, high-quality ingots through the development of a process to optimize oxygen concentration without the use of magnets and through the following. a process appropriate to the defect-free range was determined by regulating the pulling rate of the crystals.

• Bulletin of the Korean Chemical Society
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• v.7 no.5
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• pp.341-346
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• 1986

The electrical conductivity of the system ${\alpha}-Fe_2O_3-CoO$ was measured in the temperature range 200-1000$^{\circ}C$ and PO$_{2}$ range 10$^{-7}-2{\times}10^{-1}$ atm. Possible defect models were suggested on the basis of conductivity data, which were measured as a function of temperature and of oxygen partial pressure. The observed activation energies were 0.50 eV and 1.01 eV in the low- and high-temperature regions, respectively. The observed conductivity dependences on PO$_{2}$ were ${\sigma}\;{\alpha}\;PO_2^{-1/6}$ in the PO$_{2}$ range $10^{-7}-10^{-4}$ atm and ${\sigma}\;{\alpha}\;PO_2^{-1/4}$ at PO$_{2}$ 's of $10^{-4}-2{\times}10^{-1}$ atm at temperatures from 300-1000$^{\circ}C$. An extrinsic electron conduction due to an Vo defect and an intrinsic electron conduction due to an Fei' defect were suggested at different temperature and oxygen partial pressure regions, respectively.