• 제목/요약/키워드: Oxidizing atmosphere

검색결과 60건 처리시간 0.023초

Oil Adsorption of Exfoliated Graphite Prepared by Direct Reaction between $SO_3$ Gas and Graphite

  • Lee, Beom-Jae;Kwon, Young-Bae
    • Carbon letters
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    • 제2권1호
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    • pp.55-60
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    • 2001
  • Graphite intercalation compounds (GIC) were prepared by direct reaction of $SO_3$ gas with flake graphite. The intercalated $SO_3$ molecules were ejected by rapid heating to $950^{\circ}C$ under an oxidizing atmosphere for about 1 minute, resulting in surprisingly high expansion in the direction of c-axis. The characteristics of the micro-structure and pore size distribution were examined with a SEM and mercury intrusion porosimetry. The XRD analysis and spectroscopic analysis were used for the identification of the graphite and surface chemistry state. The pore size distribution of the exfoliated graphite (EG) was a range of $1{\sim}170{\mu}m$. The higher expanding temperature the higher expanded volume, so oil sorption capacities were 58.8 g of bunker-C oil and 34.7 g of diesel oil per 1 g of the the EG. The sorption equilibrium was achieved very rapidly within several minutes. As the treatment temperature increases, bulk density decreases.

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BEM을 이용하여 열산화를 고려한 실리콘 내에서 불순물의 2차원 재분포에 관한 연구 (Two-dimensional Redistribution of Impurity considering Thermal Oxidation in silicon using BEM)

  • 김훈;황호정
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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    • pp.370-374
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    • 1988
  • This paper is concerned with the investigation of the impurity redistribution process in a two step diffusion. In integrated circuit technology, two step boron diffusion involving a deposition step followed by a drive-in step in commonly encounted. The drive-in process is usually performed in oxidizing atmosphere resulting in redistribution of impurity (boron) within the semiconductor. This paper proposes a new numerical analysis method; Bounary Element Method to determine impurity profile at the arbitrary point in domain by its coordinate and boundary value.

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Fabrication and Evaluation of a New High-Temperature pH Sensor for Use in PWR Nuclear Power Plants

  • Jung, Yong-Ju;Yeon, Jei-Won
    • Bulletin of the Korean Chemical Society
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    • 제31권10호
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    • pp.2939-2942
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    • 2010
  • A new high-temperature pH sensor has been successfully developed by reforming the internal reference systems of the pH sensors based on oxygen-ion conducting ceramic membrane. The conventional internal reference system, a mixture of Ni and NiO, has been replaced with partially oxidized Ni powders, where Ni and NiO coexist on the surface of particles, in order to avoid the cumbersome mixing step of Ni and NiO particles. The partially oxidized Ni particles were made by oxidizing Ni under air atmosphere at $600^{\circ}C$ and characterized by X-ray diffraction (XRD) and FTIR spectroscopy. The viability of the pH sensor developed was assessed in boric acid (1000 ppm-B)/ lithium hydroxide (1 to 3 ppm-Li) buffer solutions at $280^{\circ}C$. The pH sensor showed excellent accuracy with a small error less than ${\pm}0.2$ pH units.

금속 (Pt)과 4H-SiC의 계면상태에 따른 실리콘 카바이드 기반 고온 가스센서 특성 분석 (The Effect of Catalytic Metal Work Functions and Interface States on the High Temperature SiC-based Gas Sensors)

  • 정지철;구상모
    • 한국전기전자재료학회논문지
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    • 제24권4호
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    • pp.280-284
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    • 2011
  • Silicon carbide (SiC)-based gas sensors can be operated at very high temperatures. So far, catalytic metal-schottky diodes respond fast to a change between a reducing and an oxidizing atmosphere. Therefore SiC diodes have been suggested for high temperature gas sensor applications. In this work, the effect of reactivity of the catalytic surface on the 4H-SiC sensor-structures in 375 K~775 K have been studied and some fundamental simulations have also been performed.

DSC에 의한 고분자물과 나트륨아지드 혼합물의 열안정성에 관한 연구 (A Study of Thermal Stability on Polymers and Sodium Azide Mixture by DSC)

  • 이내우;박준조
    • 한국안전학회지
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    • 제12권2호
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    • pp.87-94
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    • 1997
  • If sodium azide is impinged by certain reasons, it will be produced explosives by heavy metals and toxic materials. But it is used propellent for inflating automotive safety bags and the other chemical manufacturing purpose. The investigation of thermal hazard potential of sodium azide itself and with polymers ate very important because some parts of automotives, transporting vessels of reactive chemicals and many any other constituents of structures in factories are made of polymers. The range of decomposition temperatures are about $360-380^{\circ}C$, even if it depends on heating rate and sample weight. Thermal decomposition heat of sodium azide in air is higher than in nitrogen atmosphere, because the former is included oxidizing heats of sodium metal which is made by decomposition of sodium azide to end. Especially decomposition temperature of polymers are increased on the order of bonding energy between atoms in hydrocarbon moleculars.

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반응성 이온빔 스퍼터링법에 의해 제조된 ATO박막 (ATO Thin Films Prepared by Reactive lout Beam Sputtering)

  • 구창영;김경중;김광호;이희영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.361-364
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    • 2000
  • Antimony doped tin oxide (ATO) thin films were deposited at room temperature by reactive ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to 1500 $\AA$ or 2000$\AA$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from 40$0^{\circ}C$ to 80$0^{\circ}C$ in flowing $O_2$or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

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Micro-structural defects in ruby samples from Mong Hsu, Myanmar

  • Maneeratanasarn, P.;Wathanakul, P.;Kim, Y.C.;Choi, H.M.;Bang, S.Y.;Choi, B.G.;Shim, K.B.
    • 한국결정성장학회지
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    • 제19권2호
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    • pp.90-94
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    • 2009
  • Mong Hsu rubies from Myanmar were heat treated in oxidizing(oxygen) atmosphere at $1650^{\circ}C$ for 1 hour. The investigations of the micro-structural defects in the samples before and after heat treatment have been carried out by the variety of analysis techniques of FTIR, UV-VIS-NIR and SEM-EDS. It was found that after heat treatment the dark blue cores region were disappeared and turned to orange red color with the presence of the dense cloudy brownish colored tiny particles in and near former blue zoning. As-received ruby samples only revealed the presence of FTIR absorption peaks of diaspore, boehmite and O-H stretching, at 1986, 2115 and $3078/3319\;cm^{-1}$ respectively. The UV-VIS-NIR absorption of as-received and heat treated ruby samples similarly showed peaks at 405, 554 and 693 nm associated with $Cr^{3+}$, but for the same samples, the absorption peak of heat-treated ruby samples at 693 nm was somewhat stronger than that of the untreated ruby samples. Especially the presence of $Cr^{3+}$ peaks at 659 and 675 nm was found obviously in as-received ruby samples only. The SEM-EDS investigation disclosed the micro-porous defect structures commonly related to the core regions of the untreated ruby samples, which after heat treatment in an oxidizing environment those defect features have been dissolved into the host phase resulting in the lightening or disappearance of the dark coloration of ruby core.

마이크로파를 이용한 UO2+5wt% CeO2성형체의 소결특성 (Sintering Properties of UO2+5wt% CeO2Compacts Using Microwave)

  • 정창용;이수철;김시형;김한수;이영우
    • 한국세라믹학회지
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    • 제41권11호
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    • pp.797-803
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    • 2004
  • 마이크로파 가열장치를 이용하여 마이크로파 조사에 따른 SiC와 MO$_2$ 시료에 대한 발열실험을 수행하였고, 이 실험에서 얻은 발열특성 결과들을 고려하여 $UO_2$+5wt% CeO$_2$ 성형체에 대한 산화소결 실험을 수행하였다. 그리고 마이크로파와 전기로에서 각각 소결된 MO$_2$ 소결체의 특성변화를 비교분석하였다 마이크로파 조사에 따른 MO$_2$시료의 발열온도는 입력전력의 증가에 따라서 급속히 증가하였으며, 출력전력은 주로 보조가열재인 SiC와 MO$_2$ 시료가 마이크로파와 반응하는 정도에 따라서 변하였다. 마이크로파에 의하여 소결된 소결체의 밀도는 전기로에서 동일한 조건으로 소결된 소결체의 밀도보다 약 2% T.D. 낮았다. 소결체의 미세조직은 전기로에서 제조된 소결조직에 비하여 마이크로파에 의해 제조된 소결체의 기공분포가 불규칙적이었으나, 평균결정립 크기는 크게 나타났다.

전기로 제강분진으로부터 분리 회수한 조산화아연의 산화배소 정제에 관한 연구 (A Study on Roasting Refinement of Crude-ZnO from Electric Arc Furnace Steel Dust)

  • 윤치현;이명원;서정화;윤재홍
    • 자원리싸이클링
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    • 제23권1호
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    • pp.58-63
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    • 2014
  • 전기로 제강분진(EAFD)으로부터 환원배소에 의해 회수한 조산화 아연 내에는 다양한 종류의 비등점이 낮은 물질이 존재한다. 따라서 일반적으로 산화배소를 통한 정제과정을 통해 염화물 형태로 존재하는 물질들을 기화시켜 고순도의 기능성 산화아연을 생산하게 된다. 따라서 본 연구에서는 조산화 아연의 산화배소 특성을 체계적으로 규명하여 대량생산공정에 적용할 때의 효율성을 극대화하고자 하였다. 조산화 아연을 적절한 방법을 통해 직경 1-3 mm, 10 mm의 펠렛을 제조하여, 각 시편을 분말시편과 함께 수직 관상로에서 로타리 킬른의 실조업을 묘사하여 산화분위기에서 $600{\sim}1200^{\circ}C$ 온도영역까지 $20^{\circ}C/hr$ 승온속도로 가열하면서 체재시간을 유지하였다. 실험결과 펠렛의 크기에 따른 기화속도의 변화가 $950^{\circ}C$ 이상의 온도에서는 현저히 증가함을 알 수 있었다. 회수된 시편은 ICP-OES, XRF장비를 통하여 성분분석을 실시한 결과 Zn의 농도는 비례적으로 증가함을 알 수 있었으며, Cl 등의 불순물의 농도도 현저히 감소하였다. XRD 분석결과 온도가 증가할수록 염화물 피크는 관찰되지 않았으며, 본 산화배소실험을 통하여 98%이상의 고순도 산화아연을 얻을 수 있었다.

열처리 분위기에 따른 동/Bi2212 고온초전도 테입의 미세구조 (Microstructure Analysis of Cu/Bi2212 High Temperature Superconducting Tapes with Meat-Treatment Atmosphere)

  • 한상철;성태현;한영희;이준성;이원택;김상준
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.388-391
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    • 1999
  • Well oriented Bi2212 superconductor thick films were formed successfully on a copper substrate by liquid reaction between a Cu-free precursor and Cu tape method in which Cu-free BSCO powder mixture was' printed on copper plate and heat-treated. And we examined the effect of heat-treatment atmosphere for the superconducting properties and microstructure of Bi2212. The composition of Cu-free BSCO powder mixture was Bi$_2O_3$ : SrCO$_3$ : CaCO$_3$ = 1.2~2 : 1 : 1 and the heat-treatment for the superconducting formation reaction was performed in air, oxygen, nitrogen and low oxygen pressure. At heat-treatment temperature, the printing layer partially melt by reacting with CuO of the oxidizing copper plate, and the nonsuperconducting phases present in the melt are typically Bi-free phases and Cu-free phases. Among the nonsuperconducting phases, it is known that the (Sr,Ca)CuO$_3$ phase restrain the formation of the Bi2212 superconducting phase. Because a kind of the nonsuperconducting phases is controled by the oxygen partial pressure, the optimum condition in which the remnants of the second phases don't leave in the fully processed conductor was determined by XRD and the critical tempera to re (Tc) analysis.

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