• Journal of the Korean institute of surface engineering
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• v.33 no.4
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• pp.281-288
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• 2000

To understand the effect of Fe on the oxidation behavior of TiAl alloys, TiAl-(2, 4, 6at% )Fe were oxidized at 800 and 90$0^{\circ}C$ in air. The oxidation resistance of TiAl-Fe alloys increased with increasing an iron content. The scales formed consisted of an outer $TiO_2$ layer, an intermediate $A1_2$$O_3$ layer, and an inner mixed ($TiO_2$+$A1_2$$O_3$) layer, being similar to other common TiAl alloys. But, the scales formed on TiAl-Fe alloys were generally thin compared to those formed on pure TiAl, and contained dissolved iron. Below the oxide scale, an oxygen affected zone was formed. This beneficial effects of Fe on increasing the oxidation resistance and scale adherence of TiAl alloys were attributed to the refinement of oxide grains, increased scale adherence and the enhanced alumina-forming tendency.

• Bulletin of the Korean Chemical Society
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• v.22 no.11
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• pp.1192-1196
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• 2001

A diaphorase enzyme electrode for the catalytic reduction of NAD+ , the oxidized form of nicotinamide adenine dinucleotide, has been prepared. The enzyme layer grew spontaneously over an aminoethanethiol self assembled monolayer on a go ld plate electrode. The growth was accomplished by simply dipping the electrode covered by the aminoethanethiol monolayer into a solution containing both glutaraldehyde and diaphorase. We suggested that the glutaraldehyde as a cross-linking reagent was attached to the amino groups of the aminoethanethiol monolayer and the diaphorase enzyme molecules were bound to free aldehyde groups of the glutaraldehyde. Further attachments of the enzyme molecules over the bound enzyme molecules continued with the bridging of the glutaraldehyde. In frequency measurements with a quartz crystal microbalance, the frequency decrease was much more than it was for that of the enzyme monolayer formation, and an enzyme layer thicker than a monolayer was formed. The modified electrode was employed to reduce NAD+ , using diffusional methyl viologen as an electron transfer mediator. The NAD+ was electrocatalytically reduced, and the catalytic current was almost equivalent to that with the multilayered electrode of ten enzyme layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.25-28
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• 2000

A capacitance-type humidity sensors in which porous silicon layer is used as humidity-sensing material was developed. This sensors was fabricated monolithically to be compatible with the typical IC process technology except for the formation of porous silicon layer. As the sensors is made as a mesa structure, the correct measurement of capacitance is expected because it can remove the effect of the parasitic capacitance from the bottom layer and another junctions. To do this, the sensor was fabricated using process steps such as localized formation of porous silicon, oxidation of porous silicon layer and etching of oxidized porous silicon layer. From completed sensors, capacitance response was measured on the relative humidity of 25 to 95% at room temperature. As the result the measured capacitance showed the increase over 300% at the low frequency of 120Hz, and showed little dependence on the temperature between 10 to $40^{\circ}C$.

• Journal of Dental Rehabilitation and Applied Science
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• v.22 no.4
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• pp.349-365
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• 2006

State of problem : A number of investigation about increase of surface area via various surface treatments and modification of surface constituent have been carried out. Purpose : The surface characteristics and stability of implants treated with anodic oxidation, fluoride ion incorporation, and groups treated with both methods were evaluated. Material and method : Specimens were divided into six groups, group 1 was the control group with machined surface implants, groups 2 and 3 were anodic oxidized implants (group 2 was treated with 1M $H_2SO_4$ and 185V, group 3 was treated with 0.25M $H_2SO_4$ and $H_3PO_4$ and 300V). Groups 4, 5 and 6 were treated with fluoride. Group 4 was machined implants treated with 0.1% HF, and groups 5 and 6 were groups 2 and 3 treated with 10% NaF respectively. Using variable methods, implant surface characteristics were observed, and the implant stability was evaluated on rabbit tibia at 0, 4, 8 and 12 weeks. Result : 1. In comparison of the surface characteristics of anodic oxidized groups, group 2 displayed delicate and uniform oxidation layer with small pore size containing Ti, C, O and showed mainly rutile, but group 3 displayed large pore size and irregular oxidation layer with many crators. 2. In comparison of the surface characteristics of fluoride treated groups 4, 5, 6 and non-fluoride treated groups 1, 2, 3, the configurations were similar but the fluoride treated groups displayed rougher surfaces and composition analysis revealed fluoride in groups 4, 5, 6. 3. The fluoride incorporated anodic oxidized groups showed the highest resonance frequency values and removal torque values, and the values decreased in the order of anodic oxidized groups, fluoride treated group, control group. 4. According to implant stability tests, group 2 and 3 showed significantly higher values than the control group (P<.05). The fluoride treated groups showed relatively higher values than the non fluoride treated groups and there were significant difference between group 4 and group 1 (P<.05). Conclusion : From the results above, it can be considered that the anodic oxidation method is an effective method to increase initial bone stability and osseointegration and fluoride containing implant surfaces enhance new bone formation. Implants containing both of these methods should increase osseointegration, and reduce the healing period.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.6 s.336
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• pp.23-30
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• 2005

In this paper, OPPS(oxidized porous poly-silicon) field emitters were fabricated by using various emitter-electrode metal and these electron emission characteristics were investigated for different thermal annealing effects. The addressed OPPS field emitter with Pt/Ti emitter electrode annealed at $300^{\circ}C$-1hr showed the efficiency of $2.98\%$ at $V_{ps}$=12 V and one annealed at $350^{\circ}C$-1hr showed the highest efficiency of $3.37\%$at $V_{ps}$=16V. They are resulted from the improvement of interfacial contact characteristics of thin emitter metal to an oxidized porous poly-silicon and the decrease of electrical resistance of emitter metal. The brightness of the OPPS field emitter increases linearly in $V_{ps}$ and after oxidation process for $900^{\circ}C$-50min, the brightness of the OPPS field emitter with the as-deposited Pt/Ti emitter electrode was 3600 cd/$m^2$ at the $V_{ps}$=15 V, 6260 cd/$m^2$ at the $V_{ps}$=20 V. Thermal treatment improved the adhesion between the Ti buffer layer and the oxidized porous poly-silicon and also played an important role in the uniform distribution of electric field to the emitter electrode.

• Journal of the Korean institute of surface engineering
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• v.33 no.1
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• pp.3-9
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• 2000

Arc-melted alloys of TiAl-(o.25, 0.5, 1.0at%) Si were isothermally oxidized at 800, 900 and $1000^{\circ}C$ in air for 60hr. It was found that the oxidation resistance of the prepared TiAl-Si alloys was much better than that of pure TiAl, being progressively increasing with an increase in the Si content. This was attributed to the formation of $SiO_2$in addition to ($TiO_2$+$Al_2$$O_3$) oxides which formed in TiAl alloys with and without silicon additions. However, the silica formation within the oxide layer unfortunately accelerated the oxide scale spallations. During oxidation, all the elements in the base alloy diffused outward, whereas oxygen from the atmosphere diffused inward. The oxides were primarily composed of an outer thick $TiO_2$layer, an intermediate diffuse $Al_2$$O_3$layer and an inner $TiO_2$layer. A small amount of $SiO_2$was present all over the oxide scale and some voids were found around the intermediate layer.

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.79-84
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• 1996

A $1\;{\mu}m$ thick n-type GaAs layer with Si doping density of $1{\times}10^{17}/cm^{3}$ and a $500{\AA}$ thick undoped single crystalline AlAs layer were subsequently grown by molecular beam epitaxy on the $n^{+}$ GaAs substrate. The AlAs/GaAs layer was oxidized in $N_{2}$ bubbled $H_{2}O$ vapor($95^{\circ}C$) ambient at $400^{\circ}C$ for 2 and 3 hours. From the result of XPS analysis, small amounts of $As_{2}O_{3}$, AlAs, and elemental As were found in the samples oxidized up to 2 hours. After 3 hours oxidation, however, various oxides related to As were dissolved and As atoms were diffused out toward the oxide surface. The as-grown AlAs/GaAs layer was selectively converted to $Al_{2}O_{3}/GaAs$ at the oxidation temperature $400^{\circ}C$ for 3 hours. The oxidation temperature and time is very critical to stop the oxidation at the AlAs/GaAs interface and to form a defect-free surface layer.

• Proceedings of the Korean Nuclear Society Conference
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• 2005.05a
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• pp.315-316
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• 2005

• Journal of Magnetics
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• v.7 no.3
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• pp.63-71
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• 2002

Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.153-157
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• 2006

In this work, the effects of plasma treatment on surface properties of semiconductive silicone rubber were investigated in terms of X-ray photoelectron spectroscopy (XPS) and contact angles, The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths, The results of the chemical analysis showed that C-H bonds were broken due to plasma discharge and Silica-like bonds(SiOx, x=3${\~}$4) increased, It is thought that semiconductive silicone rubber surfaces treated with plasma discharge led to an increase in oxygen-containing functional groups, resulting in improving the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber. However, the oxygen plama for 20 minute produces a damaged oxidized semiconductive silicone rubber layer, which acts as a weak layer producing a decrease in T-peel strength, These results are probably due to the modifications of surface functional groups or polar component of surface free energy of the semiconductive silicone rubber.