• Journal of Environmental Health Sciences
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• v.36 no.3
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• pp.236-246
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• 2010

In preparative anti-corrosive coating experiments, polyaniline was obtained by reacting an oxidizing agent with the monomer aniline. Further, the primer coating was prepared using a variety of widely-used materials such as urethane resin. For the top coating, epoxy resin and acrylic urethane resin were used. Characteristics of the coatings were assessed according to KS and ASTM specifications, and the structure of the polyaniline was characterized using FT-IR and TGA. For analysis of anti-corrosive properties in salt-spray experiments, measurements of the oxidation state of iron and surface atomic analysis were conducted using XPS and SEM-EDX. Unlike general anti-corrosive coatings which exhibit anti-corrosive effects only as a primer coating, the anti-corrosive coatings using polyaniline as the anti-corrosive pigment showed a marked synergistic effect with the top coatings. In other words, the top coatings not only produce a fine view effect, but also increase, through interaction with the primer coatings, the resistance to diffusion of corrosive factors from the external environment. It was also found that, unlike the heavy metal oxide-forming layer of the passive barrier alone, the polyaniline anti-corrosive pigment oxidized iron at the interface with the iron substrate to form a passive barrier in the oxidic layer, and itself formed a potential barrier layer with anti-corrosive factors from the external environment. Although the passive layer was damaged, the damaged area did not become completely oxidized iron; on the contrary, it showed a tendency to reduction. This can be interpreted such that a passive layer is formed again on the damaged area, and that at the same time there is a tendency to self-healing.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.33 no.6
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• pp.203-211
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• 1984

MOS silicon solar cells have been developed using the fixed (interface) charge inherent to thermally oxidized silicon to induce an n-type inversion layer in 1-10 ohm-cm p-type silicon. Higher collection efficiencies are predicted than for diffused junction cells. Without special precautions a conversion efficiency of 14.2% is obtained. A MOS silicon solar cell is described in which an inversion layer forms the active area which is then contacted by means of a MOS grid. The highest efficiency is obtained when the resistivity of the substrate is high.

• Journal of Institute of Convergence Technology
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• v.2 no.2
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• pp.25-29
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• 2012

Micro machining technologies have been required to satisfy various conditions in a high-technology industry. Micro electrochemical process is one of the most precision machining methods. Micro electrochemical process has been divided into electrochemical etching through protective layer and electrochemical machining using ultrashort voltage pulses. Micro shaft can be fabricated by electrochemical etching. The various protective layers such as photo-resist, oxide layer and oxidized recast layer have been used to protect metal surface during electrochemical etching. Micro patterning on metal surface can be machined by electrochemical etching through protective layer. Micro hole, groove and structures can be easily machined by electrochemical machining using ultrashort voltage pulses. Recently, the groove with subnanometer was machined using AFM.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.1014-1016
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• 1998

A capacitance-type humidity sensor using porous silicon layer is developed. The unique property of this sensor is a structure which has electrodes on the surface of the wafer like a general IC device. To do this. the sensor was fabricated using process such as localized formation of porous silicon, oxidation of porous silicon layer, and etching of oxidized porous silicon layer. The measurement of humidity-sensing ability was done for two type of sensors using porous silicon layer formed in 25 and 35% HF solutions, respectively. As the result, the former sensors showed larger value and variation of capacitance for the relative humidity.

• Journal of the Korean institute of surface engineering
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• v.35 no.4
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• pp.193-198
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• 2002

Alloys of XD45 (Ti45A12Nb2Mn-0.8vol%TiB$_2$) and XD47 (Ti47A12Nb2Mn-0.8vol%TiB$_2$) were oxidized between 800 and $1000^{\circ}C$ in air, and their oxidation characteristics were studied. The oxide scales consisted primarily of an outer $TiO_2$ layer, an intermediate $Al_2$$O_3$-rich layer, and an inner mixed layer of ($TiO_2$+$Al_2$$O_3$). Nb tended to present at the lower part of the oxide scale, whereas Mn at the upper part of the oxide scale. The Pt marker tests indicated that the outer oxide layer grew primarily by the outward diffusion of Ti and Mn, and the inner mixed layer by the inward transport of oxygen.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.131-132
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• 2015

$Ti_{0.26}Al_{0.16}Si_{0.01}N_{0.57}$ (at%) coatings were synthesized on stainless steel 304 by using arc ion plating systems (AIPS). Targets employed for the deposition were Ti, AlSi(67:33at%) and AlSi(82:18at%). The thickness of TiAlSiN coatings is $4{\mu}m$. The oxidation characteristics of the deposited coatings were studied by thermogravimetric analysis (TGA) in air between 800 and $900^{\circ}C$ for 75 hr. The oxide scale formed on the TiAlSiN coatings consisted of $rutile-TiO_2$ layer and ${\alpha}-Al_2O_3$. At $800^{\circ}C$, the coatings oxidized relatively slowly, and the scales were thin and adherent. When oxidized above $900^{\circ}C$, $TiO_2$ grew fast over the mixed oxide layer, and the oxide scale formed on TiAlSiN coatings was prone to spallation. Microstructural changes of the TiAlSiN coatings that occurred during high temperature oxidation were investigated by EPMA, XRD, SEM and TEM.

• Journal of the Korean Ceramic Society
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• v.49 no.3
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• pp.241-246
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• 2012

Physical properties of plasma electrolytic oxidized layers of 8 different kinds of Al alloys, A-1100, A-2024, A-5052, A-6061, A-6063, A-7075, ACD-7B and ACD-12 were investigated. The electrolyte for plasma electrolytic oxidation was mixture of distilled water, $Na_2P_2O_7$, KOH and some metal salts. Growth rate of oxide layer was slower in $Na_2P_2O_7$ electrolyte system than in $Na_2SiO_3$ system, and Ra50 surface roughness of oxidized layer was below $1.2{\mu}m$. Surface hardness in $Na_2P_2O_7$ electrolyte system is higher than in $Na_2SiO_3$ system, and roughness was lower in $Na_2P_2O_7$ electrolyte system than in $Na_2SiO_3$ system.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.157-158
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• 2013

Organic solar cell was fabricated using one-pot deposition of a mixture of NiO nanoparticles, P3HT and PCBM. In the presence of NiO, the photovoltaic performance was slightly increased comparing to that of the device without NiO. When $TiO_2$ thin films with a thickness of 2~3 nm was prepared on NiO nanoparticles using atomic layer deposition, the power conversion efficiency was increased by a factor 2.5 with respect to that with bare NiO. Moreover, breakdown voltage of the film consisting of NiO, P3HT, and PCBM on indium tin oxide was increased by more than 1 V in the presence of $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidized on NiO surfaces, and $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidzed on NiO surfaces, and $TiO_2$ shell heavily reduced oxidation of S at oxide/P3HT interfaces. Oxidized S atoms can most likely act as carrier generation sites and recombination centers within the depletion region, decreasing breakdown voltage and performance of organic solar cells. Our result shows that fabrication of various core-shell nanostruecutres of oxides by atomic layer deposition with controlled film thickness can be of potential importance for fabricating highly efficient organic solar cells.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.106-112
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• 1990

The progress of oxidation of a porous silicon layer(PSL) was studied by examining the temperature dependence of the oxidation and the infrared absorption spectra. Thick OPSL(oxidized porous silicon layer). which has the same properties as thermal $SiO_{2}$ of bulk silicon, is formed in a short time by two steps wet oxidation of PSL at $700^{\circ}C$, 1 hr and $1100^{\circ}C$, 1 hr. Etching rate, breakdown strength of the OPSL are strongly dependent on the oxidation temperature, oxidation atmosphere. And its breakdown field was ${1\MV/cm^-2}$ MV/cm The oxide film stress was determined through curvature measurement using a dial gauge. During oxidation at temperature above $1000^{\circ}C$ in dry $O_{2}$, stress on the order of ${10^9}\dyne/{cm^2}{-10^10}\dyne/{cm^2}$ are generated in the OPSL.

• The Korean Journal of Quaternary Research
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• v.20 no.1 s.26
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• pp.1-8
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• 2006

Many boring investigations were achieved in Youngjong-North tidal flat to construct the Incheon International Airport Expressway. Vertical sedimentary profile of this tidal flat has been studied by analyzing these boring data. The deposits of Youngjong-North tidal flat are about 30 meters thick, and the sedimentary layers consist of basal gravel, lower mud, middle silt, middle mud, and upper silt layers in ascending order. Semi-consolidated and oxidized belt with yellowish brown color, which appears above or within middle mud layer, exists in $-3{\sim}-5$ meters altitude. There are some stratigraphical problems to admit the top surface of this oxidized belt as the unconformity surface between Holocene and Pre-Holocene tidal flat deposit.