• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.193.2-193.2
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• 2016

We evaluate the change in defects in the oxidized SiO2 grown on 4H-SiC (0001) by plasma assisted oxidation, by comparing with that of conventional thermal oxide. In order to investigate the changes in the electronic structure and electrical characteristics of the interfacial reaction between the thin SiO2 and SiC, x-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), DFT calculation and electrical measurements were carried out. We observed that the direct plasma oxide grown at the room temperature and rapid processing time (300 s) has enhanced electrical characteristics (frequency dispersion, hysteresis and interface trap density) than conventional thermal oxide and suppressed interfacial defect state. The decrease in defect state in conduction band edge and stress-induced leakage current (SILC) clearly indicate that plasma oxidation process improves SiO2 quality due to the reduced transition layer and energetically most stable interfacial state between SiO2/SiC controlled by the interstitial C.

• Korean Journal of Materials Research
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• v.28 no.6
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• pp.361-364
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• 2018

Binary Ti-Al alloys below 51.0 mass%Al content exhibit a breakaway, transferring from parabolic to linear rate law. The second $Al_2O_3$ layer might have some protectiveness before breakaway. Ti-63.1 mass%Al oxidized at 1173 K under parabolic law. Breakaway oxidation is observed in every alloy, except for Ti-63.1 mass%Al. After breakaway, oxidation rates of the binary TiAl alloys below 34.5 mass%Al obey almost linear kinetics. The corrosion rate of Ti-63.1 mass%Al appears to be almost parabolic. As content greater than 63.0 mass% is found to be necessary to form a protective alumina film. Addition of Mo improves the oxidation resistance dramatically. No breakaway is observed at 1123 K, and breakaway is delayed by Mo addition at 1173 K. At 1123 K, no breakaway, but a parabolic increase in mass gain, are observed in the Mo-added TiAl alloys. The binary Ti-34.5 mass%Al exhibits a transfer from parabolic to linear kinetics. At 1173 K, the binary alloys show vary fast linear oxidation and even the Mo-added alloys exhibit breakaway oxidation. The 2.0 mass%Mo-added TiAl exhibits a slope between linear and parabolic. At values of 4.0 and 6.0 mass% added TiAl alloys, slightly larger rates are observed than those for the parabolic rate law, even after breakaway. On those alloys, the second $Al_2O_3$ layer appears to be persistently continuous. Oxidation resistance is considerably degraded by the addition of Mn. Mn appears to have the effect of breaking the continuity of the second $Al_2O_3$ layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.7
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• pp.472-476
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• 2014

We report the characteristics of thin-film transistor (TFT) to make the bi-channel structure with stacked $Mg_{0.1}Zn_{0.9}O$ (Mg= 10 at.%) and ZnO. The ZnO and $Mg_{0.1}ZnO_{0.9}O$ thin films were deposited by radio frequency (RF) co-sputter system onto the thermally oxidized silicon substrate. A total thickness of active layer was 50 nm. Firstly, the ZnO thin films were deposited to control the thickness from 5 nm to 30 nm. Sequentially, the $Mg_{0.1}ZnO_{0.9}O$ thin films were deposited to change from 45 nm to 20 nm. The bi-layer TFT shows more improved properties than the single layer TFT. The field effect mobility and subthreshold slope for $Mg_{0.1}ZnO_{0.9}O$/ZnO-TFT are $7.40cm^2V^{-1}s^{-1}$ and 0.24 V/decade at the ZnO thickness of 10 nm, respectively.

• Journal of Electrochemical Science and Technology
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• v.11 no.3
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• pp.273-281
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• 2020

Constructing and making highly active and stable nanostructured Pt-based catalysts with ultralow Pt loading are still electrifying for electrochemical applications such as water electrolysis and fuel cells. In this study, MoO₃ ribbons (RBs) of few micrometer in length is successfully synthesized via hydrothermal synthesis. Subsequently, 3-dimentional (3D)-silicate layer for about 10 to 15 nm is introduced via chemical deposition onto the pre-formed MoO₃ RBs; to setup the platform for Pt metaldots (MDs) deposition. In comparison with the bare MoO₃ RBs, the MoO₃-Si has served as a efficient solid-support for stabilizing and accommodating the uniform deposition of sub-2 nm Pt MDs. Such a structural design would effectively assist in improving the electronic conductivity of a fabricated MoO₃-Si-Pt catalyst towards MOR; the interfaced, porous and 3D silicate layer has assisted in an efficient mass transport and quenching the poisonous CO_ads species leading to a significant electrocatalytic performance for MOR in alkaline medium. Uniformly decorated, sub-2 nm sized Pt MDs has synergistically oxidized the MeOH in association with the MoO₃-Si solid-support hence, synergistic catalytic activity has been achieved. Present facile approach can be extended for fabricating variety of highly efficient Metal Oxide-Metal Nanocomposite for energy harvesting applications.

• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2503-2508
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• 2010

ZnO thin films were grown on Si or $SiO_2$/Si substrates, at growth temperatures ranging from 150 to $400^{\circ}C$, by atomic layer deposition (ALD) using diethylzinc and water. Despite the large band gap of 3.3 eV, the ALD ZnO films show high n-type conductivity, i.e. low resistivity in the order of $10^{-3}\;{\Omega}cm$. In order to understand the high conductivity of ALD ZnO films, the films were characterized with X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, elastic recoil detection, Rutherford backscattering, Photoluminescence, and Raman spectroscopy. In addition, the various analytical data of the ZnO films were compared with those of ZnO single crystal. According to our analytical data, metallic zinc plays an important role for the high conductivity in ALD ZnO films. Therefore when the metallic zinc was additionally oxidized with ozone by a modified ALD sequence, the resistivity of ZnO films could be adjusted in a range of $3.8{\times}10^{-3}\;{\sim}\;19.0\;{\Omega}cm$ depending on the exposure time of ozone.

• Korean Journal of Materials Research
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• v.25 no.4
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• pp.202-208
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• 2015

Alumina dispersion strengthening copper(ADSC) alloy has great potential for use in many industrial applications such as contact supports, frictional break parts, electrode materials for lead wires, and spot welding with relatively high strength and good conductivity. In this study, we investigated the oxidation behavior of ADSC alloys. These alloys were fabricated in forms of plate and round type samples by surface oxidation reaction using Cu-0.8Al, Cu-0.4Al-0.4Ti, and Cu-0.6Al-0.4Ti(wt%) alloys. The alloys were oxidized at $980^{\circ}C$ for 1 h, 2 h, and 4 h in ambient atmosphere. The microstructure was observed with an optical microscope(OM) and a scanning electron microscope(SEM) equipped with energy-dispersive X-ray spectroscopy(EDS). Characterization of alumina was carried out using a 200 kV field-emission transmission electron microscope(TEM). As a result, various oxides including Ti were formed in the oxidation layer, in addition to ${\gamma}$-alumina. The thickness of the oxidation layer increased with Ti addition to the Cu-Al alloy and with the oxidation time. The corrected diffusion equation for the plate and round type samples showed different oxidation layer thickness under the same conditions. Diffusion length of the round type specimen had a value higher than that of its plate counterpart because the oxygen concentration per unit area of the round type specimen was higher than that of the plate type specimen at the same diffusion depth.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.55-65
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• 1998

The oxidation behavior of Ag-36.8a%Cu-7.4at%Ti alloy brazed on Si3N4 substrate was investigated at 400, 500 and 600$^{\circ}C$ in air. Under this experimental condition Si3N4 and Ag were not oxidized whereas Cu and Ti among the brazing alloy components were oxidizied obeying the parabolic oxidation rate law. The activation energy of oxidation was found to be 80kj/ mol which was smaller than that of pure Cu owing to the presence of oxygen active element of Ti. The outer oxide scale formed from the initial oxidation state was always composed of Cu oxides which were known to be growing by the outward diffusion of Cu ions. As the oxidation progressed the concentration gradient occurred due to the continuous consumption of Cu as Cu oxides and consequently build-up of an Ag-enriched layer below the Cu oxides resulted in the formation of multiple oxide scales composed of Cu oxide (CuO) /Ag-enriched layer/Cu oxide (Cu2O) /Ag-enriched layer. Also the inward diffusing of oxygen through Cu oxide and Ag-enriched layers led to the formation of internal oxides of TiO2.

• The Journal of Korean Academy of Prosthodontics
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• v.27 no.1
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• pp.143-179
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• 1989

To observe the bonding behavior of palladium-based alloys to porcelain; 1. Pd-Co binary alloy with the higher cobalt content, 2. Pd-Co binary alloy with the lower cobalt content, 3. Pd-Ag-Sn ternary alloy, 4. Pd-Ag binary alloy, 5. Pd-Cu-Au ternary alloy and 6. Pd-Cu binary alloy were made as 6 groups of experimental alloys. Each group of alloy was divided into 4 sub-groups such as one sub-group that was not degassed and three sub-groups that degassed for 5 minutes, 10 minutes and 15 minutes. On each specimen, weight changes after degassing, morphological changes of oxide layer by changing the degassing time, compositional changes at metal-ceramic interface and bond strength of metal-ceramic measured with planar shear test were observed and compared. The results of the present study allow the following conclusions to be drawn: 1. The alloy showing the greatest bond strength was Pd-Cu alloy without gold and bond strength was decreased by alloying gold to them. 2. Although Pd-Co alloy showed the most prominent oxidation behavior, bond strength of them to porcelain was not greatly high by the formation of porosities at metal-ceramic interfaces. 3. Likewise tin, cobalt formed the peaks on line profiles at metal-ceramic interface, however copper did not exhibit such peaks on line profiles. 4. Mainly, oxide layer on Pd-Co alloy was composed with cobalt, and for Pd-Co alloy with higher cobalt content the rise of bond strength was not significant by increased degassing time. 5. On Pd-Ag alloy not containing tin, during degassing for 15 minutes silver content was increased at metal-ceramic interface. 6. As an oxidized element, tin formed the oxide layers that widen their area by increasing the degassing time, while cobalt and copper showed the morphological changes of particle or crystal on oxide layer.

• Journal of the Korean Chemical Society
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• v.5 no.1
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• pp.42-47
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• 1961

A titration of a small amount of iron with standard potassium ferrocyanide using potassium thiocyanate as indicator has been studied. A sample solution containing $0.1{\sim}1.0$ mg. $Fe^{3+}$ in 60 ml. is pipeted into 100 ml. Erlenmyer flask and the pH of the solution is adjusted to $1.5{\sim}3.0$ with 0.1 N or 1 N $HNO_3$ and $NH_4OH.$ To this solution one ml. of 1 M KCNS solution as indicator is added. The solution colored by iron thiocyanate complex is titrated with 1/200 M or 1/400 M standard solution of potassium ferrocyanide from a 5 ml. micro-buret. Near the end point, when the color of sample changes from deep red to green, about 20 ml. of ether is added and shake the flask vigorously. The red color is extracted to the ether layer. To settle the ether layer a few drops of ethanol is added and then standard solution is added dropwise and shake vigorously. The end point is reached when the color of the ether layer disappears owing to the quantitative formation of $Fe_4[Fe(CN)_6]_3.$ In this titration, 0.lmg. of $Fe^{3+}$ can be determined within 1.0% of titration error, provided the following optimum conditions, i.e., pH $1.5{\sim}3.0$, final concentration of KCNS indicator; $0.01{\sim}0.02M$, at room temperature. The titration found to be interfered by the presence of slightly soluble salts, stable complex forming ions and the ions which would be reduced by ferrocyanide or oxidized by ferric ion.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1341-1342
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• 2006

Electrical characteristics of field-effect thin film transistors (TFTs) with p-channels of CdTe/CdHgTe core-shell nanocrystals are investigated in this paper. For the fabrication of bottom- and top-gate TFTs, CdTe/CrHgTe nanocrystals synthesized by colloidal method are first dispersed on oxidized p+ Si substrates by spin-coating, the dispersed nanoparticles are sintered at $150^{\circ}C$ to form the channels for the TFTs, and $Al_{2}O_{3}$ layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate $SiO_2$ layer exhibits a mobility of $0.21cm^2$/ Vs and an Ion/Ioff ratio of $1.5{\times}10^2$ and a representative top-gate field-effect TFT with a top-gate $Al_{2}O_{3}$ layer provides a field-effect mobility of $0.026cm^2$/ Vs and an Ion/Ioff ratio of $2.5{\times}10^2$. $Al_{2}O_{3}$ was deposited for passivation of CdTe/CdHgTe core-shell nanocrystal layer, resulting in enhanced hole mobility, Ior/Ioff ratio by 0.25, $3{\times}10^3$, respectively. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top gate geometries are compared in this paper.