• Journal of the Korean institute of surface engineering
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• v.40 no.1
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• pp.39-43
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• 2007

The pure CrN powders oxidized to $Cr_2O_3$ noticeably above $850^{\circ}C$ in air. When these powders were sintered into bulk samples at $1500^{\circ}C$ under 40 atm of $N_2$ pressure, the CrN phase partly changed into the $Cr_2N$ phase, owing to the partial loss of nitrogen from CrN. When the bulk sample was heated at $1000-1200^{\circ}C$ for 100 hr under vacuum, the CrN phase also progressively changed into $Cr_2N$. At the same time, a relatively thin $Cr_2O_3$ layer formed on the bulk sample due to the reaction of chromium with residual oxygen in vacuum.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.117-117
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• 2014

Thin $ZrO_2/Al_2O_3$ films were deposited on a tool steel substrate using Zr and Al cathodes in a cathodic arc plasma deposition system (CAPD), and then oxidized at $600-900^{\circ}C$ in air for up to 50 h. They effectively suppressed the oxidation of the substrate up to $800^{\circ}C$ by acting as a barrier layer against the outward diffusion of the substrate elements and inward diffusion of oxygen. However, rapid oxidation occurred at $900^{\circ}C$ due mainly to the increased diffusion and subsequent oxidation of steel as well as the crystallization of amorphous $Al_2O__3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.456-459
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• 2002

This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21mV/$V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• Corrosion Science and Technology
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• v.12 no.3
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• pp.119-124
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• 2013

Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.149-153
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• 2016

Thermal oxidation has significant potential for use in synthesizing metal-oxide nanostructures from metallic materials. However, this method has limited applicability to the synthesis of multi-morphology NiO from Ni foil. Techniques consisting of mechanical and chemical approaches were used to pre-treat the Ni foil (prior to oxidation) to promote the formation of nanowires and nanoplates on the NiO layer. These morphologies were realized on the Ni foils scratched by sand paper and a knife, respectively, and subsequently heat-treated at $500^{\circ}C$ for 24 h. Small nanowires (diameter: <10 nm) formed on the Ni foil treated by absolute $HNO_3$ and then oxidized at $500^{\circ}C$ for 24 h. The formation of various morphologies (on the pre-treated Ni foil), which differ from that formed in the case of pristine Ni foil after oxidation, may be attributed to the surface melting phenomenon that occurs during the nucleation process.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.05a
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• pp.5-5
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• 2000

In the severe accident case like LOCA, Zircaloy(Zry) claddings are oxidized not only in high temperature but also in high pressures. It is a concem whether the safety of high bum up fuels can be maintained during severe accident. The effects of steam pressure on Zry-4 oxidation, and the effect of prc-existing oxide layer on the cladding in the high temperature-high pressure oxidation of Ziy-4 were investigated. The experimental temperature range was $700-900^{\circ}C$, and the pressures were between 0.1 and l5.0MPa. Partial pressure of steam tumed out to be the important one rather than total gas pressure. The higher the steam pressure was applied, the thicker the oxide became. nle effect of st,earn pressure on the oxidation of claddings with preexisting oxide was about 40-60% less effective than that of pickled cladding. Aocelerated oxidation in highpressure slean1 seems to be originated from the formation of microcracks produced during the transformation of tetragonal zirconia to monoclinic phase. Steam pressure seems to affect the stability of tetragonal phase.

• Journal of the Korean Ceramic Society
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• v.28 no.12
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• pp.961-968
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• 1991

The nature and composition of the surfaces of silicon nitride and β-Sialon powders were investigated using high voltage and high resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). β-Sialon powder was produced from Hadong kaolin by the carbothermic reduction and simultaneous nitridation. XPS showed that Al was contained in the surface of β-Sialon powder besides Si, N and O components, which is different from that of silicon nitride. It was supposed that Al in the surface of β-Sialon was bonded with oxygen from the oxygen-nitrogen ratio and the measurement of Al 2p binding energies. After both silicon nitride and β-Sialon powders were oxidized at 800℃ for 24h in air, nitrogen didn't exist in the surfaces and the depth of the oxide layer increased. The measurement of Si 2p binding energies showed that the chemical shifts occurred from Si3N2O and/or Si2N2O to SiO2 phase.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.29-35
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• 1992

Dielectric thin film of N/O (Si$_{3}N_[4}/SIO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(Dry & pyrogenic oxidation methods) of the top Si$_{3}N_[4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high frequency C-V meter, high resolution TEM, AES, and SIMS. The thickness limit of Si$_{3}N_[4}$ film in making thin N/O structure layer was 7nm. In this experiment, the film with thinner than 7nm was not thick enough as oxygen diffusion barrier, and oxygen punched through the film and interfacial oxidation occurred at the phase boundary between Si$_{3}N_[4}$ and polycrystalline silicon electrode.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.110-114
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• 2004

High velocity oxy-fuel sprayed NiCoCrAlY coatings were oxidized between 1000 and $1200^{\circ}C$ in air, and the oxide scales were examined by XRD, SEM/EDS, and EPMA. The unoxidized coatings consisted mainly of ${\gamma}$'$-Ni_3$Al, with some ${\gamma}$-Ni. The major oxide formed on the coatings was $\alpha$ $-Al_2$$O_3$. Additionally, (CoCr$_2$$O_4$, $CoAl_2$$O_4$) spinels and $Al_{5}$ $Y_3$$O_{12}$ coexisted. NiO was not found, despite of high amount of Ni in the coating. Below the oxide layer, internally formed $Al_2$$O_3$ existed.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.700-702
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• 2006

We prepared a Ni-ferrite encapsulated Mo-permalloy powder through simple electroless plating and heat treatment. It was observed that Ni-ferrite particles formed in a spherical form on each Mo-permalloy grain. The microstructure and the magnetic characteristics of the encapsulated powders depended strongly on oxidation time in the heat-treatment. When the powder was oxidized for 60 min, a dense Ni-ferrite layer covered the Mo-permalloy grain, which in turn exhibited high saturation magnetization of 85.8 emu/g. The magnetic core prepared additionally with the encapsulated powder exhibited a resonant frequency of 12 kHz.